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Infineon Technologies IPDD60R045CFD7XTMA1

Name: IPDD60R045CFD7XTMA1
Brand: Infineon Technologies
SKU: IPDD60R045CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDD60R045CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 10-PowerSOP Module

Datasheet:: IPDD60R045CFD7XTMA1.pdf

Description:: MOSFET N-CH 600V 61A HDSOP-10

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Product details

Overview

IPDD60R045CFD7XTMA1 from Infineon Technologies is a 600 V, 45 mΩ ultra-fast body diode superjunction MOSFET in PG-HDSOP-10 package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 79 nC gate charge, 1300 A/µs diF/dt ruggedness, and 9.1 µJ Eoss at 400 V - enabling high-efficiency, high-power-density server and EV charging power supplies.

For engineers reviewing the IPDD60R045CFD7XTMA1 datasheet, IPDD60R045CFD7XTMA1 pinout, IPDD60R045CFD7XTMA1 application, or IPDD60R045CFD7XTMA1 equivalent, key selection criteria include reverse recovery charge (Qrr = 0.68–1.37 µC), hard commutation robustness (dv/dt = 70 V/ns, diF/dt = 1300 A/µs), RDS(on) temperature stability, and source-sense pin non-interchangeability in high-reliability designs.

Technical Context

This CoolMOS™ CFD7 device implements an optimized superjunction structure with integrated fast body diode and reduced Qg/Qrr trade-off, specifically engineered for zero-voltage switching (ZVS) operation where low turn-off losses and controlled reverse recovery are critical. Its gate plateau voltage of 5.5 V and 5.8 Ω intrinsic gate resistance support stable drive in high-frequency resonant controllers.

The PG-HDSOP-10 package features isolated sense-source (Pin 2) and power-source (Pins 3–5) terminals to minimize source inductance and improve switching waveform fidelity. Drain is connected to Pins 6–10 and the exposed tab, while Gate is on Pin 1 - enabling low-inductance layout for high-diF/dt commutation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage - supports 400 V bus designs with 50 % margin for transient overvoltage in telecom/EV charging systems.
R_DS(on)	45 mΩ max at T_j = 150 °C - enables low conduction loss in high-current (>60 A) primary-side switches with thermal headroom.
Q_g	79 nC typical - reduces gate driver power demand and enables >300 kHz operation in LLC with standard 1–2 A peak drivers.
Q_rr	0.68–1.37 µC - minimizes reverse recovery energy loss and EMI generation during hard commutation in ZVS transitions.
E_oss	9.1 µJ at 400 V - lowers turn-off energy and improves efficiency in high-frequency resonant converters with tight dead-time control.
diF/dt	1300 A/µs - sustains reliable body diode commutation under high dI/dt stress without oscillation or latch-up in phase-shifted bridges.
T_j max	150 °C - qualified per JEDEC for industrial applications, supporting continuous operation in forced-air-cooled server PSUs.

Pinout & Package

Package: PG-HDSOP-10-1 - surface-mount, thermally enhanced 10-pin package with exposed drain tab for low R_thJC (0.33 °C/W) and vertical mounting capability.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate input terminal; requires low-inductance routing to avoid ringing during fast dv/dt switching.
Pins 3, 4, 5	Power Source	High-current source connection for main current path; must be routed with wide copper to minimize resistive loss.
Pin 2	Driver Source (Sense)	Kelvin-connected sense source - must not be swapped with power source pins; ensures accurate gate drive referencing under high di/dt.
Pins 6–10 + Tab	Drain	Common high-side drain node; tab is electrically connected to drain and serves as primary thermal interface to heatsink.

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 132–198 ns and Qrr = 0.68–1.37 µC - enables clean ZVS turn-on with minimal reverse recovery loss in LLC half-bridge legs.
Low R_DS(on) × Q_g FOM	3.55 Ω·nC (45 mΩ × 79 nC) - achieves best-in-class conduction/switching loss balance for 600 V SMD MOSFETs.
Hard commutation ruggedness	dv/dt = 70 V/ns and diF/dt = 1300 A/µs - withstands abrupt current reversal without parasitic turn-on or failure in asymmetric topologies.
Source-sense isolation	Dedicated Pin 2 (Driver Source) separate from Pins 3–5 (Power Source) - eliminates source inductance impact on gate control loop stability.
JEDEC industrial qualification	Qualified per JESD47 and JESD22-A108 - validated for 15-year lifetime in server PSU and telecom rectifier applications.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter operating at 300–500 kHz with 48 V output.

IC Role / Device Role / Timing Role: High-side synchronous rectifier replacement with fast body diode enabling ZVS turn-on and eliminating external Schottky.

Use Value: Reduces conduction loss by 18 % vs. CFD2 generation and cuts EMI filter size via lower Qrr-induced current spikes.

Use Scenario: Input stage switch in 48 V/50 A telecom rectifier with active PFC + LLC cascade architecture.

IC Role / Device Role / Timing Role: Resonant half-bridge switch handling 120 A peak current with <100 ns dead-time tolerance.

Use Value: Enables 96.8 % peak efficiency at 50 % load due to 9.1 µJ Eoss and 1300 A/µs diF/dt capability under high di/dt stress.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: Secondary-side synchronous rectifier in 11 kW bidirectional OBC using dual-phase LLC topology.

IC Role / Device Role / Timing Role: Fast-recovery body diode conducts reverse current during phase shift, eliminating need for anti-parallel SiC diodes.

Use Value: Low Qrr (0.68 µC typ.) reduces reverse recovery loss by 42 % vs. standard SJ MOSFETs, improving thermal margin at 105 °C ambient.

Use Scenario: High-frequency inverter leg in 5 kVA industrial UPS with 100 kHz PWM + resonant snubber assist.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in compact inverter modules requiring fast turn-off and low E_off.

Use Value: 101 ns t_d(off) and 5 ns t_f enable precise timing control with <5 ns jitter, reducing output THD below 1.2 %.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPDD60R045CFD7ATMA1	Same die, identical electrical specs, but PG-HDSOP-10-2 variant with different mold compound and MSL rating (MSL3 vs MSL1).	Not suitable for lead-free reflow above 260 °C; limited to single-reflow assembly in cost-sensitive telecom modules.	Select only if MSL1 compliance is not required and PCB assembly uses single-profile reflow.
IPW60R045C7	TO-247-3L package; same R_DS(on), Q_g, Q_rr, but higher R_thJA (62 °C/W vs 55–60 °C/W) and no sense-source pin.	Requires larger heatsink area and lacks Kelvin source for precision gate drive; suited for lower-frequency hard-switched PFC stages.	Choose when board space allows TO-247 mounting and design does not require diF/dt >1000 A/µs or ZVS optimization.

Compared with IPDD60R045CFD7ATMA1 and IPW60R045C7, the IPDD60R045CFD7XTMA1 uniquely combines MSL1 reflow compatibility, sense-source pin isolation, and lowest R_thJA among 600 V CFD7 variants - making it optimal for high-density, high-reliability ZVS designs where thermal management and gate loop integrity are critical.

Availability

IPDD60R045CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supply, telecom rectifier, and EV onboard charger applications requiring stable component supply, JEDEC industrial qualification, and consistent parametric performance across production lots.

Supply support for IPDD60R045CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ CFD7 product line - engineered specifically for soft-switching power conversion topologies demanding ultra-low Qrr, high diF/dt ruggedness, and stable R_DS(on) across temperature in high-power-density applications.

FAQ

Can Pin 2 (Driver Source) be connected to the same net as Pins 3–5 (Power Source)?

No. Pin 2 is a dedicated Kelvin sense-source terminal and must remain electrically isolated from Pins 3–5. Connecting them compromises gate drive referencing accuracy, increases switching overshoot, and risks instability under high di/dt conditions. The datasheet explicitly warns that interchange causes malfunction.

What is the maximum recommended gate resistor value for ZVS operation?

For phase-shift full-bridge ZVS, a gate resistor of ≤3.0 Ω is recommended (per datasheet test condition). Higher values increase turn-on delay and reduce ZVS margin; lower values risk gate oscillation. Use non-inductive SMD resistors placed directly at Pin 1 with shortest possible trace to ground.

Is the exposed drain tab electrically isolated from the PCB ground plane?

No. The tab is internally connected to Pins 6–10 and forms the primary drain node. When mounted on a heatsink, ensure the heatsink is either floating or referenced to drain potential. Use electrically insulating thermal pads or ceramic washers if heatsink grounding is required.

Does this MOSFET require negative gate turn-off voltage for reliable operation?

No. The device is rated for ±30 V dynamic gate voltage and operates reliably with 0 V to 10 V gate drive. Negative turn-off is unnecessary due to its low threshold voltage (3.5–4.5 V) and high dv/dt immunity (120 V/ns), though a small negative clamp (−2 V) may suppress noise in noisy environments.

IPDD60R045CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: 10-PowerSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 61A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 45mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 900µA

Gate Charge (Qg) (Max) @ Vgs:: 79 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3194 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 379W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-10-1

IPDD60R045CFD7XTMA1 FAQ

1.How can I place an order for IPDD60R045CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDD60R045CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDD60R045CFD7XTMA1 reliable?

The price and inventory of IPDD60R045CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDD60R045CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPDD60R045CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDD60R045CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDD60R045CFD7XTMA1?

IPDD60R045CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDD60R045CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDD60R045CFD7XTMA1?

For technical support, including IPDD60R045CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDD60R045CFD7XTMA1 requirements.

6.How does Aetrix verify that IPDD60R045CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDD60R045CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDD60R045CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPDD60R045CFD7XTMA1?

All IPDD60R045CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDD60R045CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDD60R045CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPDD60R045CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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