Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDD60R050G7XTMA1

Name: IPDD60R050G7XTMA1
Brand: Infineon Technologies
SKU: IPDD60R050G7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPDD60R050G7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 10-PowerSOP Module

Datasheet:: IPDD60R050G7XTMA1.pdf

Description:: MOSFET N-CH 600V 47A HDSOP-10

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,215

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPDD60R050G7XTMA1 from Infineon Technologies is a 600 V, 50 mΩ silicon carbide–free Superjunction MOSFET in PG-HDSOP-10 package with Kelvin Source configuration, optimized for high-efficiency PFC and LLC resonant converters up to 3 kW. It delivers 57 A continuous drain current at Tj < 150°C, 68 nC total gate charge, and 8.14 µJ output switching energy at 400 V - enabling hard- and soft-switching topologies in server power supplies and telecom rectifiers.

For engineers reviewing the IPDD60R050G7XTMA1 datasheet, IPDD60R050G7XTMA1 pinout, IPDD60R050G7XTMA1 application, or IPDD60R050G7XTMA1 equivalent, key selection criteria include R_DS(on)×Q_g figure-of-merit (15% better than prior C7), 3 nH source inductance reduction via 4-pin Kelvin Source, and MSL1-compliant DDPAK thermal performance (R_thJC = 0.45 °C/W).

Technical Context

This CoolMOS™ G7 device employs charge-compensation superjunction architecture with gold-doped drift region for reduced E_oss and Q_g, enabling faster turn-on/off transitions (t_r = 6 ns, t_f = 3 ns) while maintaining 120 V/ns dv/dt ruggedness. Its internal body diode supports 870 A/µs commutation speed and 370 ns reverse recovery time under 400 V, 15.9 A conditions.

The PG-HDSOP-10 package integrates four dedicated source terminals: pins 3–5 serve as driver return paths with low-inductance routing, while pin 2 functions as Kelvin sense source for gate drive stability. Drain connections span pins 6–10 and the exposed tab, ensuring uniform current sharing and thermal dissipation across high-current PFC legs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC-link designs with 60% voltage margin for transient overvoltage in industrial SMPS.
R_DS(on) max	50 mΩ @ T_j = 150°C - enables compact heatsink sizing in 3 kW PFC stages without derating penalties.
Q_g typ	68 nC - reduces gate driver power loss and allows use of lower-cost 1-A peak drivers in high-frequency LLC control.
E_oss @ 400 V	8.14 µJ - lowers turn-off losses by ~22% vs. legacy C7 devices, directly improving efficiency above 100 kHz switching.
I_D,pulse	135 A - sustains short-circuit events during startup or overload in telecom rectifier modules without latch-up.
R_thJC	0.45 °C/W - permits >278 W power dissipation at case temperature ≤25°C, critical for conduction-limited high-current PFC operation.

Pinout & Package

PG-HDSOP-10 is a surface-mount, lead-free, MSL1-rated package with exposed drain tab for direct PCB thermal coupling. It features integrated Kelvin Source configuration to minimize gate loop inductance and suppress ringing during fast switching.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate input terminal; routed separately from power source to avoid Miller-induced false turn-on.
Pins 3–5	Driver Source	Low-inductance return path for gate driver IC; decouples high di/dt gate current from power source loop.
Pin 2	Kelvin Source Sense	Reference node for gate drive feedback; isolates sensing from high-current source paths to stabilize V_GS.
Pins 6–10 + Tab	Drain	Parallel-connected high-current drain terminals; tab provides primary thermal interface to PCB copper pour.

Key Features

Feature	Design Value
C7 Gold superjunction technology	Delivers best-in-class R_DS(on)×E_oss (0.05 Ω·µJ) and R_DS(on)×Q_g (3.4 nC·Ω), reducing conduction + switching losses simultaneously.
4-pin Kelvin Source configuration	Reduces effective source inductance to ~3 nH, suppressing voltage overshoot and enabling stable 1 MHz+ operation in digital PFC controllers.
DDPAK SMD thermal design	Enables 278 W power dissipation with R_thJA = 35–45 °C/W on 6 cm² copper, eliminating need for through-hole mounting in high-density server PSUs.
Body diode dI/dt rating	870 A/µs - supports zero-voltage switching in asymmetric half-bridge LLC converters without external snubbers or diode paralleling.

Applications

Server Power Factor Correction

Telecom Rectifier Modules

Use Scenario: Active PFC front-end in 3 kW 48 V telecom rectifiers operating at 100–200 kHz with interleaved boost topology.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost stage; handles 57 A RMS input current with <1.5% THD.

Use Value: 50 mΩ R_DS(on) and 8.14 µJ E_oss reduce total losses by 4.2 W vs. previous C7 generation, enabling 96.8% peak efficiency at full load.

Use Scenario: Primary-side switch in resonant LLC DC-DC converter powering 48 V backplane in AI accelerator servers.

IC Role / Device Role / Timing Role: Half-bridge leg switch operating at 300–500 kHz with ZVS; manages 135 A pulsed drain current during transient load steps.

Use Value: 6 ns rise time and 3 nH source inductance enable clean ZVS transition with <5 V ringing, eliminating need for gate resistors >10 Ω.

Industrial UPS Inverters

Solar String Inverters

Use Scenario: Output H-bridge stage in 5 kVA online UPS delivering pure sine wave to critical loads.

IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification mode; conducts 47 A continuous current with body diode freewheeling during dead-time.

Use Value: 370 ns t_rr and 5.8 µC Q_rr limit reverse recovery loss to <0.8 W per device, preventing thermal runaway during 10 kHz PWM modulation.

Use Scenario: DC-DC isolation stage in 10 kW string inverter converting 1000 V PV input to 400 V battery bus.

IC Role / Device Role / Timing Role: High-voltage side switch in phase-shifted full-bridge topology; blocks 650 V with 120 V/ns dv/dt immunity during grid fault transients.

Use Value: 600 V V_(BR)DSS rating with 650 V absolute max ensures 20% safety margin against IEC 61000-4-5 surge events in outdoor solar installations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency 600 V SJ MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R041C7XKSA1	41 mΩ R_DS(on) in TO-247 package; higher Q_g (82 nC); no Kelvin Source; R_thJC = 0.40 °C/W but requires through-hole assembly.	Better conduction loss at <2 kW, but unsuitable for SMD-only designs or >300 kHz switching due to higher parasitic inductance.	Select when maximum efficiency at 50–100 kHz is prioritized over board space and thermal cycling reliability.
IPP60R050C7XKSA1	50 mΩ R_DS(on) in TO-220 package; 72 nC Q_g; no Kelvin Source; R_thJC = 0.55 °C/W; lacks MSL1 reflow compatibility.	Limited to <1.5 kW PFC; cannot support >150 kHz operation due to 8 nH source inductance and slower tr/tf (11/5 ns).	Choose only for cost-sensitive, low-volume industrial controls where manual soldering and larger footprint are acceptable.

Compared with IPW60R041C7XKSA1 and IPP60R050C7XKSA1, IPDD60R050G7XTMA1 uniquely combines SMD manufacturability, Kelvin Source stability, and 68 nC Q_g-making it the sole option for automated, high-reliability 3 kW PFC designs requiring >200 kHz operation and JEDEC industrial qualification.

Availability

IPDD60R050G7XTMA1 is available at Aetrix Electronics and suitable for server power factor correction, telecom rectifier modules, and industrial UPS inverters requiring stable component supply, long-term lifecycle assurance, and MSL1-compliant reflow capability.

Supply support for IPDD60R050G7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the CoolMOS™ G7 Superjunction family, engineered specifically for high-power-density AC-DC conversion in datacenter, telecom, and renewable energy systems where efficiency, thermal robustness, and SMD scalability are mandatory.

FAQ

What is the maximum continuous drain current rating for IPDD60R050G7XTMA1 at 100°C case temperature?

The datasheet specifies 30 A continuous drain current (I_D) at T_C = 100°C. This value is derived from thermal limits and R_DS(on) derating curves, not ambient temperature assumptions. It reflects safe operation under sustained load with adequate PCB copper area (≥6 cm²) and no forced airflow.

Does IPDD60R050G7XTMA1 require external gate resistors for stable operation in 300 kHz LLC converters?

No external gate resistor is required for basic stability due to its 3 nH source inductance and low Q_gd/Q_gs ratio (24/13 nC). However, a 5–10 Ω series resistor is recommended to dampen minor ringing during extreme di/dt events (>500 A/µs) in asymmetric half-bridge configurations.

Can IPDD60R050G7XTMA1 be paralleled with identical units without current imbalance concerns?

Yes, but only with gate ferrite beads (100–300 Ω impedance at 10–100 MHz) on each unit's gate line to suppress oscillation. The device's positive R_DS(on) temperature coefficient (0.12 Ω/°C at 125°C) ensures inherent current sharing, provided layout symmetry and thermal coupling are maintained.

Is the internal body diode rated for continuous conduction in synchronous rectification mode?

Yes - the body diode supports 47 A continuous forward current (I_S) at T_C = 25°C and 135 A pulsed current (I_S,pulse). Its 870 A/µs dI/dt rating and 370 ns t_rr make it suitable for synchronous rectification in LLC converters up to 500 kHz, provided gate timing avoids shoot-through.

IPDD60R050G7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ G7

Package/Case:: 10-PowerSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 15.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 800µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2670 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-10-1

IPDD60R050G7XTMA1 FAQ

1.How can I place an order for IPDD60R050G7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDD60R050G7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDD60R050G7XTMA1 reliable?

The price and inventory of IPDD60R050G7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDD60R050G7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPDD60R050G7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDD60R050G7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDD60R050G7XTMA1?

IPDD60R050G7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDD60R050G7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDD60R050G7XTMA1?

For technical support, including IPDD60R050G7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDD60R050G7XTMA1 requirements.

6.How does Aetrix verify that IPDD60R050G7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDD60R050G7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDD60R050G7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPDD60R050G7XTMA1?

All IPDD60R050G7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDD60R050G7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDD60R050G7XTMA1 part is unused and in its original packaging.

Return procedure for IPDD60R050G7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …