Infineon Technologies IPDD60R055CFD7XTMA1

Overview

IPDD60R055CFD7XTMA1 from Infineon Technologies is a 600 V, 55 mΩ ultra-fast body diode superjunction MOSFET in PG-HDSOP-10 package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 129 A pulsed drain current, 67 nC typical gate charge, and 7.7 µJ Eoss at 400 V - enabling high-efficiency, high-power-density server and EV charging power supplies.

For engineers reviewing the IPDD60R055CFD7XTMA1 datasheet, IPDD60R055CFD7XTMA1 pinout, IPDD60R055CFD7XTMA1 application, or IPDD60R055CFD7XTMA1 equivalent, key selection criteria include its 1300 A/µs diF/dt ruggedness, best-in-class Qrr (0.61–1.22 µC), low RDS(on)×Qg FOM, and validated JEDEC industrial qualification - critical for hard-commutation reliability in ZVS designs.

Technical Context

This CoolMOS™ CFD7 device implements a superjunction structure with integrated fast-recovery body diode, engineered specifically to reduce switching losses and improve reverse recovery behavior in zero-voltage-switching circuits. Its 5.6 V gate plateau voltage and 24 nC Qgd support precise timing control in resonant half-bridge and full-bridge gate drivers.

The PG-HDSOP-10 package features isolated tab (Drain-connected) and dedicated sense-source pins (Pin 2 = Driver Source, Pins 3–5 = Power Source), enabling accurate source-side current sensing and minimizing common-source inductance. Pin 1 is Gate, and Pins 6–10 + tab are Drain - confirmed per Rev. 2.0 datasheet Figure 12 and Table 1.

Key Specifications

Pinout & Package

PG-HDSOP-10 package with exposed copper tab (Drain-connected), surface-mount footprint, and isolated sense-source configuration. Pin 1 = Gate; Pins 3–5 = Power Source; Pin 2 = Driver Source; Pins 6–10 + tab = Drain. Sense-source separation prevents gate loop instability and enables accurate current monitoring.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW60R065CFD7 and IPP60R055CFD7, the IPDD60R055CFD7XTMA1 uniquely combines SMD PG-HDSOP-10 packaging, dual-source pinout, and industry-leading diF/dt capability - making it the only option for space-constrained, high-reliability ZVS server and EV charger designs requiring both layout precision and transient robustness.

Availability

IPDD60R055CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and high-volume production continuity.

Supply support for IPDD60R055CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial control ICs, with over 30 years of high-voltage transistor innovation.

This device belongs to the CoolMOS™ CFD7 product line - engineered explicitly for soft-switching resonant topologies where ultra-low Qrr, high diF/dt, and precise gate control are mandatory for ZVS stability and efficiency.

FAQ

Can IPDD60R055CFD7XTMA1 replace older CoolMOS™ CFD2 devices in existing designs?

Yes, but with layout and gate drive adjustments. The CFD7 offers lower Qg (67 nC vs. ~85 nC) and significantly reduced Qrr (0.61 µC typ vs. ~2.1 µC), which improves ZVS margin but may require gate resistor tuning to avoid excessive dv/dt. Thermal performance is comparable, but the PG-HDSOP-10 pinout differs - verify source pin routing before drop-in substitution.

What is the functional difference between Pin 2 (Driver Source) and Pins 3–5 (Power Source)?

Pin 2 is an isolated sense-source terminal for gate driver feedback, while Pins 3–5 carry high-current return paths. They are not interchangeable: connecting them together introduces noise coupling and degrades diF/dt ruggedness. The datasheet explicitly warns that swapping these pins causes malfunction due to compromised source-loop inductance control and inaccurate current sensing.

Is the exposed tab electrically isolated or connected internally?

The exposed tab is internally connected to the Drain (Pins 6–10). It serves as both the primary thermal path and high-voltage drain node - requiring proper insulation from heatsinks unless using isolated thermal pads. This configuration is confirmed in the "Package Outlines" section (Page 12) and maximum ratings table (V_ISO = n.a.), indicating no internal isolation.

Does this MOSFET require negative gate turn-off voltage for reliable operation?

No. The device operates reliably with 0 V to +10 V gate drive (V_GS(th) = 3.5–4.5 V); negative turn-off is not required. However, applying –5 V during turn-off improves immunity to parasitic turn-on in high-dv/dt environments. The datasheet specifies ±20 V static and ±30 V dynamic V_GS limits, confirming safe operation within standard 12 V gate driver rails.