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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDD60R075CFD7XTMA1

Name: IPDD60R075CFD7XTMA1
Brand: Infineon Technologies
SKU: IPDD60R075CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDD60R075CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 10-PowerSOP Module

Datasheet:: IPDD60R075CFD7XTMA1.pdf

Description:: MOSFET N-CH 600V 40A HDSOP-10

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Product details

Overview

IPDD60R075CFD7XTMA1 from Infineon Technologies is a 600 V, 75 mΩ ultra-fast body diode superjunction MOSFET in PG-HDSOP-10 package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 97 A pulsed drain current, 51 nC typical gate charge, and 5.9 µJ output energy at 400 V, enabling high-efficiency power conversion in server, telecom, and EV charging systems.

For engineers reviewing the IPDD60R075CFD7XTMA1 datasheet, IPDD60R075CFD7XTMA1 pinout, IPDD60R075CFD7XTMA1 application, or IPDD60R075CFD7XTMA1 equivalent, key selection criteria include its 1300 A/µs diF/dt ruggedness, best-in-class Qrr (0.51–1.02 µC), low RDS(on)×Qg FOM, and validated JEDEC industrial qualification-critical for hard-commutation reliability in ZVS designs.

Technical Context

This CoolMOS™ CFD7 device implements a superjunction structure with integrated fast-recovery body diode, engineered specifically for zero-voltage switching operation. Its reduced Qg (51 nC), ultra-low Qrr, and enhanced dv/dt (70 V/ns) and diF/dt (1300 A/µs) robustness enable stable commutation under high di/dt stress without snubbers.

The PG-HDSOP-10 package features isolated tab (Drain), dedicated Driver Source (Pin 2), and separate Power Source (Pins 3–5), preventing source inductance coupling during paralleling. Gate drive must reference Driver Source-not Power Source-to maintain control loop stability and prevent oscillation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage - supports 400 V bus designs with 50 % margin for transient overvoltage in telecom/server PSUs.
R_DS(on)	75 mΩ max at T_j = 150 °C - enables low conduction loss in high-current LLC primary switches with minimal heatsink requirement.
Q_g	51 nC typical - reduces gate driver power demand and allows use of lower-cost drivers in high-frequency (>300 kHz) resonant converters.
Q_rr	0.51–1.02 µC - minimizes reverse recovery loss and EMI generation during hard commutation in asymmetric half-bridge configurations.
E_oss	5.9 µJ at 400 V - lowers turn-off energy loss and improves efficiency in ZVS transitions where output capacitance is discharged into resonant tank.
diF/dt	1300 A/µs - ensures reliable body diode commutation in high-power phase-shifted full-bridge converters without failure under peak load transients.
T_j max	150 °C - rated for continuous industrial operation with derated power above 100 °C, validated per JEDEC JESD47.

Pinout & Package

PG-HDSOP-10 package with exposed drain tab (thermally and electrically connected to Pins 6–10 and tab); 10-pin surface-mount outline optimized for high-current, low-inductance PCB layout and thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control input; requires low-impedance gate driver referenced to Driver Source (Pin 2), not Power Source.
Pins 3–5	Power Source	Main current return path for high-side switch configuration; not interchangeable with Driver Source (Pin 2).
Pin 2	Driver Source	Reference node for gate driver feedback; mandatory for stable gate control when paralleling devices or minimizing shoot-through risk.
Pins 6–10 + Tab	Drain	High-voltage output terminal; tab provides primary thermal path to heatsink and must be soldered to large copper area per Infineon layout guidelines.

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 110–165 ns and Qrr = 0.51–1.02 µC - eliminates need for external SiC/Schottky anti-parallel diodes in LLC synchronous rectification.
Low R_DS(on) × Q_g FOM	Best-in-class figure-of-merit - balances conduction and switching losses for optimal efficiency across 100–500 kHz resonant operating range.
Hard commutation ruggedness	1300 A/µs diF/dt rating - sustains repeated forced commutation events in phase-shifted full-bridge without parametric shift or failure.
JEDEC industrial qualification	Qualified per JESD47 - guarantees reliability for 10+ year field life in telecom rectifiers and EV charging power stages.
Source pin separation	Dedicated Driver Source (Pin 2) and Power Source (Pins 3–5) - prevents gate loop instability and enables precise gate voltage control under high di/dt conditions.

Applications

Server PSU

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter for AI server rack power supply.

IC Role / Device Role / Timing Role: High-side resonant switch operating at 350 kHz with ZVS turn-on and controlled body-diode commutation.

Use Value: 5.9 µJ E_oss and 0.51 µC Qrr reduce switching loss by 18 % vs. CFD2, enabling >97 % efficiency at full load.

Use Scenario: Main switch in 48 V / 2000 W telecom rectifier with hold-up time extension and dynamic load step response.

IC Role / Device Role / Timing Role: Phase-shift full-bridge (ZVS) primary switch with 1300 A/µs diF/dt capability for rapid transient recovery.

Use Value: Validated 150 °C junction operation and JEDEC qualification ensure 10-year field reliability under 24/7 base station duty cycle.

EV DC Fast Charger

Industrial UPS

Use Scenario: Primary switch in dual-active-bridge (DAB) isolation stage for 15 kW bidirectional OBC/charger module.

IC Role / Device Role / Timing Role: Bidirectional ZVS switch with symmetric hard commutation on both forward and reverse power flow paths.

Use Value: Ultra-low Qrr and 70 V/ns reverse diode dv/dt rating suppress voltage spikes during polarity reversal, eliminating snubber design.

Use Scenario: High-efficiency inverter stage in 10 kVA three-phase online UPS with active PFC front-end.

IC Role / Device Role / Timing Role: Resonant inverter switch in LLC-based DC-AC stage operating at variable frequency under load-dependent modulation.

Use Value: 75 mΩ R_DS(on) at 150 °C maintains <1.2 W conduction loss at 40 A RMS, reducing thermal footprint by 35 % vs. TO-247 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R075CFD7	TO-247-3 package; identical die, higher R_thJC (0.55 °C/W) and no Driver Source pin.	Requires external gate resistor placement and lacks source separation - less suitable for paralleling or high-density layouts.	Select when legacy through-hole mounting or higher single-device power dissipation (>300 W) is required.
IPP60R075CFD7	PG-TO220-3-1 package; same die but non-isolated tab and no Driver Source pin.	Limited thermal performance (R_thJC = 0.75 °C/W); unsuitable for >150 W continuous operation without oversized heatsink.	Select only for cost-sensitive, low-volume industrial SMPS where PCB space and paralleling are not constraints.

Compared with IPW60R075CFD7 and IPP60R075CFD7, the IPDD60R075CFD7XTMA1's PG-HDSOP-10 package with Driver Source pin and 0.47 °C/W R_thJC enables higher power density, stable paralleling, and superior ZVS behavior in compact, high-frequency resonant converters.

Availability

IPDD60R075CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV DC fast chargers requiring stable component supply, JEDEC-qualified industrial reliability, and high-frequency resonant topology support.

Supply support for IPDD60R075CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon carbide and superjunction MOSFET technologies.

The CoolMOS™ CFD7 product line was developed to address efficiency and ruggedness gaps in soft-switching power converters, targeting phase-shift full-bridge and LLC topologies in datacenter, telecom, and EV infrastructure applications.

FAQ

Can IPDD60R075CFD7XTMA1 be paralleled with other CoolMOS™ devices?

Yes, but only with identical CFD7 variants and strict adherence to Infineon's layout guidelines: gate resistors must be placed on the Driver Source (Pin 2), not Gate; source inductance must be matched; and thermal coupling between devices must be uniform. Mixing CFD2 or CFD7 generations invalidates paralleling reliability.

What is the purpose of the separate Driver Source (Pin 2) and Power Source (Pins 3–5)?

Driver Source (Pin 2) provides a low-inductance, dedicated return path for gate drive current to prevent ground bounce and oscillation during fast switching. Power Source (Pins 3–5) carries main load current and must not be used as gate reference-exchanging them causes unstable turn-on and potential device failure.

Is the exposed drain tab electrically isolated from the PCB copper pour?

No-the tab is internally connected to Drain (Pins 6–10) and must be soldered directly to a high-thermal-conductivity copper pour tied to the system ground plane or heatsink. Electrical isolation is not supported; insulation requires external thermal pad with dielectric layer meeting 600 V creepage requirements.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No-turn-off is robust with 0 V gate drive due to its 4.5 V maximum V_GS(th) and low gate leakage (<100 nA). However, applying –5 V enhances noise immunity in high-dV/dt environments; it is optional, not required, per Infineon's recommended gate drive of 0 V to +10 V.

IPDD60R075CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: 10-PowerSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 75mOhm @ 11.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 570µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2102 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 266W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-10-1

IPDD60R075CFD7XTMA1 FAQ

1.How can I place an order for IPDD60R075CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDD60R075CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDD60R075CFD7XTMA1 reliable?

The price and inventory of IPDD60R075CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDD60R075CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPDD60R075CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDD60R075CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDD60R075CFD7XTMA1?

IPDD60R075CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDD60R075CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDD60R075CFD7XTMA1?

For technical support, including IPDD60R075CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDD60R075CFD7XTMA1 requirements.

6.How does Aetrix verify that IPDD60R075CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDD60R075CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDD60R075CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPDD60R075CFD7XTMA1?

All IPDD60R075CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDD60R075CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDD60R075CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPDD60R075CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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