Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDD60R125CFD7XTMA1

Name: IPDD60R125CFD7XTMA1
Brand: Infineon Technologies
SKU: IPDD60R125CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPDD60R125CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 10-PowerSOP Module

Datasheet:: IPDD60R125CFD7XTMA1.pdf

Description:: MOSFET N-CH 600V 27A HDSOP-10

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,688

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPDD60R125CFD7XTMA1 from Infineon Technologies is a 600 V, 125 mΩ ultra-fast body diode CoolMOS™ CFD7 power MOSFET in PG-HDSOP-10 package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters in server, telecom, and EV charging systems. It delivers 31 nC gate charge, 0.38 µC typical reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness.

For engineers reviewing the IPDD60R125CFD7XTMA1 datasheet, IPDD60R125CFD7XTMA1 pinout, IPDD60R125CFD7XTMA1 application, or IPDD60R125CFD7XTMA1 equivalent, key selection criteria include its low R_DS(on)×Q_g FOM, JEDEC-qualified industrial reliability, and source-sense pin configuration requiring strict layout adherence to avoid malfunction.

Technical Context

This device implements Infineon's superjunction-based CoolMOS™ CFD7 architecture, engineered specifically for zero-voltage switching (ZVS) operation with minimized Q_rr and enhanced dv/dt robustness in both MOSFET and body diode modes. Its 1300 A/µs diF/dt rating and 70 V/ns reverse diode dv/dt support hard commutation in high-frequency resonant converters without snubbers.

The PG-HDSOP-10 package integrates isolated drain terminals (Pins 6–10 + tab) and dedicated sense-source pins (Pins 3–5), enabling precise current sensing and gate drive decoupling. Gate (Pin 1) and driver source (Pin 2) separation ensures stable turn-on dynamics under high di/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Rated blocking voltage for primary-side switching in 400 V DC bus applications like telecom rectifiers and EV chargers.
R_DS(on),max	125 mΩ at T_j = 150°C - Enables low conduction loss in compact, high-power-density 1–3 kW LLC designs.
Q_g,typ	31 nC - Reduces gate drive power and enables efficient operation with standard 10 V gate drivers in ZVS topologies.
Q_rr,typ	0.38 µC at V_R = 400 V - Minimizes switching loss and EMI during body diode commutation in resonant half/full-bridge stages.
diF/dt	1300 A/µs - Supports robust hard-switching capability without oscillation or failure during synchronous rectification or freewheeling.
P_tot	176 W at T_C = 25°C - Delivers high thermal headroom when mounted on 40 mm × 40 mm FR4 PCB with exposed tab cooling.
R_thJC	0.71 °C/W - Enables direct heatsink attachment via the exposed drain tab for low-junction-to-case thermal resistance.

Pinout & Package

PG-HDSOP-10 is a surface-mount, thermally enhanced package with an exposed drain tab for direct heatsinking. Pin 1 is Gate, Pin 2 is Driver Source, Pins 3–5 are Power Source (sense and power combined), Pins 6–10 and the tab are Drain terminals.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate input terminal; requires low-inductance routing to minimize ringing during fast switching.
Pin 2	Driver Source	Reference node for gate driver IC return path; must not be connected to power source pins to preserve sensing accuracy.
Pins 3–5	Power Source	Combined source and sense connection; provides Kelvin sensing for accurate current monitoring in closed-loop control.
Pins 6–10 + Tab	Drain	High-current drain path with parallel terminals to reduce package inductance and improve current sharing in paralleled configurations.

Key Features

Feature	Design Value
Ultra-fast body diode	95 ns typical reverse recovery time (t_rr) and 0.38 µC Q_rr enable clean commutation in LLC primary-side synchronous rectification.
Low R_DS(on) × Q_g FOM	3.9 Ω·nC - Balances conduction and switching losses for highest efficiency in 100–500 kHz resonant converters.
Source-sense pin architecture	Dedicated Pins 3–5 provide Kelvin source connection to eliminate PCB trace resistance error in current sensing feedback loops.
JEDEC-qualified industrial reliability	Rated for continuous operation from –55°C to +150°C junction temperature with full qualification per JESD47 standards.
Optimized dv/dt ruggedness	120 V/ns MOSFET dv/dt and 70 V/ns reverse diode dv/dt prevent false turn-on and ensure stable operation in high-noise ZVS environments.

Applications

Server PSU Primary Switch

Telecom Rectifier Stage

Use Scenario: High-efficiency 3 kW phase-shift full-bridge converter in 1U server power supply operating at 200–300 kHz.

IC Role / Device Role / Timing Role: Primary-side high-side switch with ZVS-assisted turn-on and body-diode-assisted freewheeling.

Use Value: 0.38 µC Q_rr reduces dead-time loss by >15% versus prior CFD2 generation, improving full-load efficiency by 0.4%.

Use Scenario: 2 kW telecom rectifier using asymmetric half-bridge topology with 400 V DC output and active PFC front-end.

IC Role / Device Role / Timing Role: Main switching transistor in resonant LLC stage delivering regulated 54 V output.

Use Value: 1300 A/µs diF/dt rating eliminates need for external di/dt limiting inrush protection during cold-start load transients.

EV Onboard Charger (OBC) PFC+LLC

Industrial UPS Inverter Stage

Use Scenario: Bidirectional OBC with dual-stage PFC + LLC architecture handling 6.6 kW AC/DC conversion at 94% peak efficiency.

IC Role / Device Role / Timing Role: LLC resonant tank switch operating in soft-switching mode with variable frequency control.

Use Value: 31 nC Q_g allows use of low-power gate drivers (e.g., 1EDN7512B) without compromising switching speed or loss.

Use Scenario: 5 kVA online UPS inverter stage converting 400 V DC bus to 230 V AC output using full-bridge topology.

IC Role / Device Role / Timing Role: High-side switching element in hard-switched inverter leg with active clamping.

Use Value: 125 mΩ R_DS(on) at 150°C maintains <1.2 W conduction loss per device at 15 A RMS, reducing heatsink size by 30%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPDD60R180CFD7	Higher R_DS(on) (180 mΩ), lower Q_g (24 nC), same package and diF/dt rating	Better suited for lower-power (<1.5 kW) or cost-sensitive designs where conduction loss budget allows higher R_DS(on)	Select when optimizing for gate drive simplicity and reduced EMI over peak efficiency at high load.
IPW60R099CFD7	Lower R_DS(on) (99 mΩ), higher Q_g (42 nC), TO-247-4L package	Requires through-hole mounting and larger PCB area; better thermal performance but no source-sense pins	Choose for higher-power (>4 kW) applications needing lower conduction loss and superior heatsinking, accepting larger footprint and no Kelvin sensing.

Compared with IPDD60R180CFD7 and IPW60R099CFD7, IPDD60R125CFD7XTMA1 uniquely balances 125 mΩ conduction loss, 31 nC gate drive demand, and integrated source-sense capability in a compact SMD package-making it optimal for space-constrained, high-efficiency 2–3 kW resonant converters requiring precise current feedback.

Availability

IPDD60R125CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and consistent parametric performance across production lots.

Supply support for IPDD60R125CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control solutions, with global manufacturing and R&D infrastructure.

This device belongs to the CoolMOS™ CFD7 product line-designed explicitly for soft-switching resonant topologies such as phase-shift full-bridge and LLC converters, targeting highest efficiency and ruggedness in high-frequency, high-power-density applications.

FAQ

Can IPDD60R125CFD7XTMA1 be used in hard-switched topologies?

Yes, but with design constraints. Its 120 V/ns MOSFET dv/dt and 1300 A/µs diF/dt ratings support limited hard commutation, yet its optimization targets ZVS/LLC operation. For pure hard-switched applications, gate resistor tuning and snubber design are essential to manage voltage overshoot and body diode stress.

What is the functional difference between Power Source (Pins 3–5) and Driver Source (Pin 2)?

Pins 3–5 carry high-current source return and provide Kelvin sensing reference for current measurement; Pin 2 is exclusively for gate driver return path to isolate gate loop noise from power sensing. Swapping them causes inaccurate current feedback and potential instability in closed-loop control systems.

Is the exposed drain tab electrically isolated from other pins?

No-the tab is internally connected to Pins 6–10 as part of the drain terminal. It must be mounted to a heatsink at drain potential or insulated accordingly. Thermal interface material must maintain electrical isolation if the heatsink is grounded, as the tab carries full drain voltage swing.

How does the CFD7 body diode compare to standard silicon MOSFETs in reverse recovery?

It achieves 0.38 µC typical Q_rr and 95 ns t_rr-up to 60% lower than previous CoolMOS™ generations and significantly better than standard planar MOSFETs. This reduces switching loss, EMI, and thermal stress during body diode conduction in resonant freewheeling phases.

IPDD60R125CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: 10-PowerSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 125mOhm @ 6.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 340µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1329 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 176W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-10-1

IPDD60R125CFD7XTMA1 FAQ

1.How can I place an order for IPDD60R125CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDD60R125CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDD60R125CFD7XTMA1 reliable?

The price and inventory of IPDD60R125CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDD60R125CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPDD60R125CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDD60R125CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDD60R125CFD7XTMA1?

IPDD60R125CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDD60R125CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDD60R125CFD7XTMA1?

For technical support, including IPDD60R125CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDD60R125CFD7XTMA1 requirements.

6.How does Aetrix verify that IPDD60R125CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDD60R125CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDD60R125CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPDD60R125CFD7XTMA1?

All IPDD60R125CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDD60R125CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDD60R125CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPDD60R125CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …