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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDD60R125G7XTMA1

Name: IPDD60R125G7XTMA1
Brand: Infineon Technologies
SKU: IPDD60R125G7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDD60R125G7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 10-PowerSOP Module

Datasheet:: IPDD60R125G7XTMA1.pdf

Description:: MOSFET N-CH 600V 20A HDSOP-10

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Product details

Overview

IPDD60R125G7XTMA1 from Infineon Technologies is a 600 V, 125 mΩ silicon carbide–compatible CoolMOS™ C7 GOLD superjunction MOSFET in PG-HDSOP-10 package with Kelvin Source configuration. It delivers 27 A continuous drain current at Tj < 150°C, 27 nC total gate charge, and 3.27 µJ Eoss at 400 V, optimized for high-efficiency PFC and LLC resonant converters in server and telecom SMPS.

For engineers reviewing the IPDD60R125G7XTMA1 datasheet, IPDD60R125G7XTMA1 pinout, IPDD60R125G7XTMA1 application, or IPDD60R125G7XTMA1 equivalent, key selection criteria include RDS(on)×Qg FOM (27 nC × 0.125 Ω = 3.375 nC·Ω), 4-pin Kelvin Source layout, 3 nH source inductance, 1.04 °C/W RthJC, and MSL1-compliant SMD thermal performance up to 3 kW PFC stages.

Technical Context

This 600 V superjunction MOSFET employs Infineon's C7 GOLD process with optimized charge balancing for reduced RDS(on)×Eoss and RDS(on)×Qg-15% better than prior C7 generation. Its internal body diode supports 720 A/µs di/dt commutation, enabling robust operation in hard-switched boost PFC and high-frequency LLC half-bridge topologies.

The PG-HDSOP-10 package integrates four dedicated source terminals (Pins 3–5 as Driver Source, Pin 2 as Power Source) to isolate gate drive return path from power loop, minimizing parasitic inductance (~3 nH) and eliminating gate ringing without external ferrite beads-critical for stable 100+ kHz switching at >20 A peak currents.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Withstands 400 V DC bus with 60 V margin for voltage spikes in 380–400 VAC PFC applications.
R_DS(on) max	125 mΩ @ T_j = 150°C - Enables 27 A continuous conduction in thermally constrained SMD layouts without derating.
Q_g typ	27 nC @ V_GS = 0–10 V - Low gate charge allows fast turn-on/off with standard 1–2 A gate drivers, reducing switching losses.
E_oss	3.27 µJ @ 400 V - Minimizes capacitive turn-on loss in ZVS/ZCS soft-switching LLC and asymmetric half-bridge designs.
I_D,pulse	54 A - Supports 2× peak current handling during startup surge or transient overload in 3 kW PFC stages.
R_thJC	1.04 °C/W - Enables direct heatsink mounting via tab (Pins 6–10 + exposed drain pad) for high-power density thermal management.

Pinout & Package

PG-HDSOP-10 package features an exposed drain tab (Pins 6–10 + metal tab) for low-thermal-resistance heatsinking and four isolated source terminals to enable Kelvin sensing: Pins 3–5 serve as driver source return, Pin 2 as power source return.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input; requires <20 V absolute max rating and low-inductance gate loop routing.
Pins 3–5	Driver Source	Low-noise return path for gate driver IC; decouples switching noise from power source loop.
Pin 2	Power Source	Main current return for drain-source conduction; connects to bulk capacitor ground or main power plane.
Pins 6–10 + Tab	Drain	High-current output node; tab provides primary thermal path to heatsink (R_thJC = 1.04 °C/W).

Key Features

Feature	Design Value
C7 GOLD superjunction technology	125 mΩ R_DS(on) in 115 mm² DDPAK footprint-50% smaller area than prior 40 mΩ D2PAK equivalents at same voltage class.
4-pin Kelvin Source configuration	Separates gate drive return (Pins 3–5) from power return (Pin 2), reducing source inductance to ~3 nH for clean 100+ kHz switching.
MSL1 reflow-compatible SMD package	Enables automated assembly at 260 °C peak reflow without moisture-related delamination or voiding risks.
Body diode dI/dt rating	720 A/µs - Supports fast zero-voltage switching recovery in LLC resonant converters without snubber networks.

Applications

Server PSU PFC Stage

Telecom Rectifier LLC

Use Scenario: Active boost PFC front-end in 2.5–3 kW 1U server power supplies operating at 65–100 kHz.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; handles 27 A RMS input current.

Use Value: 125 mΩ R_DS(on) and 27 nC Q_g reduce conduction + switching losses to <1.2% total MOSFET loss at full load.

Use Scenario: Primary-side switch in asymmetric half-bridge LLC resonant converter for 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: ZVS-capable power switch operating at 200–500 kHz with 400 V DC bus and 20 A peak drain current.

Use Value: 3.27 µJ E_oss and 720 A/µs di/dt enable reliable zero-voltage turn-on and fast body diode commutation without external snubbers.

Solar Inverter DC-DC Stage

Industrial UPS Inverter Bridge

Use Scenario: Isolated DC-DC stage in string inverters converting 1000 V PV input to 400 V intermediate bus.

IC Role / Device Role / Timing Role: High-voltage synchronous rectifier or active clamp switch in phase-shifted full-bridge topology.

Use Value: 650 V V_DS,max and 1.04 °C/W R_thJC support 98% efficiency at 100 kHz switching with minimal heatsink volume.

Use Scenario: Output H-bridge switch in 5–10 kVA online UPS systems requiring high reliability and thermal margin.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM inverter bridge driving motor/generator loads.

Use Value: 54 A pulse rating and JEDEC industrial qualification ensure sustained operation under 3× overload conditions without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R125C7	D2PAK-7L package; no Kelvin Source; R_thJC = 1.25 °C/W; Q_g = 29 nC	Larger footprint (150 mm²); higher source inductance (~8 nH); less suitable for >150 kHz PFC	Prefer when board space allows larger package and gate drive layout lacks Kelvin separation capability.
STP60N125K6	TO-247-3L; no Kelvin Source; R_DS(on) = 125 mΩ; Q_g = 32 nC; R_thJC = 0.55 °C/W	Through-hole mounting; superior thermal R_thJC but no SMD automation; higher Q_g increases driver stress	Prefer for legacy through-hole designs or where heatsink interface demands lowest possible R_thJC.

Compared with IPW60R125C7 and STP60N125K6, IPDD60R125G7XTMA1 uniquely combines SMD manufacturability, Kelvin Source noise isolation, and best-in-class RDS(on)×Qg FOM-making it optimal for next-gen 3 kW PFC modules targeting 98.5% efficiency and automated production.

Availability

IPDD60R125G7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar DC-DC converters requiring stable component supply, JEDEC-qualified industrial reliability, and MSL1-compliant SMD assembly.

Supply support for IPDD60R125G7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This device belongs to the CoolMOS™ C7 GOLD superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in datacenter, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for IPDD60R125G7XTMA1?

The IPDD60R125G7XTMA1 is rated for 27 A continuous drain current at case temperature TC ≤ 100°C and junction temperature Tj ≤ 150°C. This rating assumes proper PCB copper area (6 cm² drain pad) and vertical mounting without forced airflow, per datasheet thermal test condition.

Does IPDD60R125G7XTMA1 require external gate resistors for stable operation?

Yes-gate resistance must be selected based on drive strength and layout inductance. The datasheet recommends RG = 10 Ω for characterization (td(on) = 18 ns, tr = 5 ns), but typical designs use 2.2–5.6 Ω for 1–2 A drivers to balance switching speed and ringing suppression, especially given its ultra-low 3 nH source inductance.

Can IPDD60R125G7XTMA1 be paralleled with identical units?

Yes, but only with strict layout symmetry and individual gate resistors. The datasheet explicitly recommends ferrite beads on each gate line or separate totem-pole drivers to suppress oscillation-due to mismatched dynamic parameters and shared source inductance-even with Kelvin Source architecture.

Is the internal body diode suitable for synchronous rectification?

No-the integrated body diode is optimized for commutation in PFC and LLC, not unidirectional conduction. Its 0.8 V forward voltage and 280 ns reverse recovery time (trr) make it unsuitable for synchronous rectification; external Schottky or GaN FETs are required for that function.

IPDD60R125G7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ G7

Package/Case:: 10-PowerSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 6.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 320µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1080 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 120W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-10-1

IPDD60R125G7XTMA1 FAQ

1.How can I place an order for IPDD60R125G7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDD60R125G7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDD60R125G7XTMA1 reliable?

The price and inventory of IPDD60R125G7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDD60R125G7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPDD60R125G7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDD60R125G7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDD60R125G7XTMA1?

IPDD60R125G7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDD60R125G7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDD60R125G7XTMA1?

For technical support, including IPDD60R125G7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDD60R125G7XTMA1 requirements.

6.How does Aetrix verify that IPDD60R125G7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDD60R125G7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDD60R125G7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPDD60R125G7XTMA1?

All IPDD60R125G7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDD60R125G7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDD60R125G7XTMA1 part is unused and in its original packaging.

Return procedure for IPDD60R125G7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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