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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDD60R145CFD7XTMA1

Name: IPDD60R145CFD7XTMA1
Brand: Infineon Technologies
SKU: IPDD60R145CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDD60R145CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 10-PowerSOP Module

Datasheet:: IPDD60R145CFD7XTMA1.pdf

Description:: MOSFET N-CH 600V 24A HDSOP-10

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Product details

Overview

IPDD60R145CFD7XTMA1 from Infineon Technologies is a 600 V, 145 mΩ ultra-fast body diode CoolMOS™ CFD7 power MOSFET in PG-HDSOP-10 package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 51 A pulsed drain current, 28 nC typical gate charge, 0.36 µC reverse recovery charge, and 1300 A/µs diF/dt ruggedness-enabling high-efficiency, high-power-density server, telecom, and EV charging power supplies.

For engineers reviewing the IPDD60R145CFD7XTMA1 datasheet, IPDD60R145CFD7XTMA1 pinout, IPDD60R145CFD7XTMA1 application, or IPDD60R145CFD7XTMA1 equivalent, key selection criteria include its low R_DS(on)×Q_g figure-of-merit, JEDEC-qualified industrial reliability, source-sense pin integrity requirement, and gate resistor placement guidance for paralleling.

Technical Context

This device implements Infineon's superjunction-based CoolMOS™ CFD7 architecture, engineered specifically for zero-voltage switching (ZVS) operation. Its reduced Q_g (28 nC), best-in-class Q_rr (0.36–0.72 µC), and enhanced diF/dt (1300 A/µs) enable robust hard commutation while maintaining fast turn-off behavior and low E_oss (3.2 µJ at 400 V).

The PG-HDSOP-10 package integrates isolated sense-source (Pin 2) and power-source (Pins 3–5) terminals to support accurate current sensing without compromising conduction path integrity. Drain is connected to Pins 6–10 and the exposed tab, requiring proper thermal mounting and strict adherence to non-interchangeability of source pins.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage-supports primary-side switching in 400 V DC bus telecom and EV charger applications.
R_DS(on),max	145 mΩ at T_j = 150°C-defines conduction loss ceiling under worst-case thermal conditions.
Q_g,typ	28 nC-determines gate drive power and switching speed in resonant half/full-bridge designs.
Q_rr	0.36–0.72 µC-directly impacts turn-on losses and EMI in LLC/ZVS circuits with body diode commutation.
diF/dt	1300 A/µs-quantifies hard-switching robustness during synchronous rectification or freewheeling events.
E_oss	3.2 µJ at 400 V-sets energy loss during turn-on in high-frequency resonant operation.
T_j,max	150°C-enables operation in thermally constrained server PSU and on-board charger modules.

Pinout & Package

PG-HDSOP-10 is a surface-mount, thermally enhanced package with exposed drain tab for direct heatsinking. Pin 1 is Gate, Pins 3–5 are Power Source, Pin 2 is Driver Source (sense), and Pins 6–10 plus tab form the common Drain connection.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control input for MOSFET channel activation; requires low-inductance gate loop layout.
Pins 3, 4, 5	Power Source	Main current return path for load current; carries full ID,pulse (51 A) and must be routed with low impedance.
Pin 2	Driver Source (Sense)	Reference node for gate driver IC feedback; not interchangeable with power source-misuse causes regulation failure.
Pins 6–10 + Tab	Drain	High-voltage output terminal and thermal interface; tab must be soldered to PCB copper for R_thJC = 0.78 °C/W performance.

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 92–138 ns and Qrr = 0.36–0.72 µC-minimizes turn-on loss and voltage overshoot in ZVS transitions.
Low R_DS(on) × Q_g FOM	145 mΩ × 28 nC = 4.06 Ω·nC-enables higher frequency operation without sacrificing conduction efficiency.
Enhanced dv/dt ruggedness	70 V/ns reverse diode dv/dt rating-prevents spurious turn-on during high dV/dt commutation in bridge legs.
JEDEC industrial qualification	Qualified per JESD47-ensures long-term reliability in continuous-operation server and telecom power systems.
Source pin separation	Dedicated sense-source (Pin 2) and power-source (Pins 3–5)-enables accurate current monitoring without shunt resistors.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW, 96% efficient 48 V output phase-shift full-bridge converter.

IC Role / Device Role / Timing Role: High-voltage switching element operating in ZVS mode with 100–300 kHz switching frequency.

Use Value: Low Q_rr and high diF/dt prevent shoot-through during dead-time commutation, improving system MTBF.

Use Scenario: LLC resonant converter in -48 V telecom rectifier delivering 2.5 kW with <15 mV ripple.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge LLC primary, leveraging ultra-fast body diode for synchronous rectification assist.

Use Value: 1300 A/µs diF/dt rating ensures reliable operation under transient overload without parasitic turn-on.

EV On-Board Charger

Industrial AC-DC Module

Use Scenario: PFC + DC-DC stage in 11 kW bidirectional OBC supporting 400 V/800 V battery architectures.

IC Role / Device Role / Timing Role: Isolated DC-DC primary switch in dual-active-bridge topology with soft switching across full load range.

Use Value: 3.2 µJ E_oss reduces turn-on loss at 200 kHz, enabling >97% peak efficiency without forced air cooling.

Use Scenario: 1.5 kW industrial AC-DC front-end using asymmetric half-bridge with integrated hold-up capacitor.

IC Role / Device Role / Timing Role: Main switching transistor in high-reliability, fanless power module rated for 15-year field life.

Use Value: JEDEC industrial qualification and 150°C T_j max ensure stable operation in sealed enclosures up to 70°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPDD60R180CFD7	R_DS(on),max = 180 mΩ; Q_g,typ = 22 nC; lower conduction loss penalty but higher switching loss due to increased C_iss.	Better suited for lower-current, higher-frequency LLC designs where gate drive loss dominates.	Select when optimizing for gate drive efficiency over conduction loss at <15 A RMS load current.
IPW60R099C7	TO-247-3L package; R_DS(on),max = 99 mΩ; no sense-source pin; higher thermal resistance (R_thJC = 0.45 °C/W) but larger creepage.	Preferred in high-isolation, high-power (>3 kW) industrial SMPS where PCB space allows through-hole mounting.	Choose when isolation, thermal headroom, or legacy TO-247 footprint compatibility outweigh SMD assembly benefits.

Compared with IPDD60R180CFD7 and IPW60R099C7, IPDD60R145CFD7XTMA1 uniquely balances low R_DS(on), ultra-low Q_rr, and integrated sense-source capability in an SMD package-making it optimal for compact, high-efficiency, high-reliability resonant converters where board area and thermal management are constrained.

Availability

IPDD60R145CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supply, telecom rectifier, and EV on-board charger designs requiring stable component supply, JEDEC-qualified industrial reliability, and high-power-density SMD implementation.

Supply support for IPDD60R145CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

This part belongs to the CoolMOS™ CFD7 product line-designed explicitly for soft-switching resonant topologies like LLC and phase-shift full-bridge, targeting highest efficiency and ruggedness in high-frequency, high-power AC-DC conversion.

FAQ

Can Pin 2 (Driver Source) be connected to the same net as Pins 3–5 (Power Source)?

No. Pin 2 is the dedicated sense-source terminal for gate driver feedback, while Pins 3–5 carry full load current. Connecting them together eliminates current sensing accuracy and risks gate drive instability. The datasheet explicitly warns that interchange leads to malfunction.

What is the maximum recommended gate resistor value when paralleling multiple IPDD60R145CFD7XTMA1 devices?

For paralleling, Infineon recommends placing the gate resistor on the Driver Source (Pin 2) rather than the Gate (Pin 1). While no absolute maximum is specified, typical design practice uses 5–15 Ω per device to balance switching speed and oscillation damping, verified via layout-dependent gate loop inductance measurements.

Does this MOSFET require negative gate turn-off voltage to ensure robustness in hard commutation?

No. The device achieves 1300 A/µs diF/dt ruggedness with standard 0 V to 10 V gate drive. Negative turn-off voltage is not required or recommended-its improved body diode dv/dt and diF/dt ratings eliminate the need for complex gate drive schemes in most ZVS and LLC implementations.

Is the PG-HDSOP-10 package lead-free and RoHS-compliant?

Yes. IPDD60R145CFD7XTMA1 is manufactured in accordance with RoHS Directive 2011/65/EU and uses lead-free solderable terminations. The "XTMA1" suffix denotes tape-and-reel packaging compliant with MSL Level 1 reflow profile (peak 260°C, per J-STD-020).

IPDD60R145CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: 10-PowerSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 145mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 300µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1199 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-10-1

IPDD60R145CFD7XTMA1 FAQ

1.How can I place an order for IPDD60R145CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDD60R145CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDD60R145CFD7XTMA1 reliable?

The price and inventory of IPDD60R145CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDD60R145CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPDD60R145CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDD60R145CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDD60R145CFD7XTMA1?

IPDD60R145CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDD60R145CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDD60R145CFD7XTMA1?

For technical support, including IPDD60R145CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDD60R145CFD7XTMA1 requirements.

6.How does Aetrix verify that IPDD60R145CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDD60R145CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDD60R145CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPDD60R145CFD7XTMA1?

All IPDD60R145CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDD60R145CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDD60R145CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPDD60R145CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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