Infineon Technologies IPDQ60R017S7AXTMA1

Overview

IPDQ60R017S7AXTMA1 from Infineon Technologies is a 600 V, 17 mΩ superjunction MOSFET in PG-HDSOP-22 (QDPAK) package with Kelvin Source configuration, designed as a high-current static switch for low-frequency HV applications including battery disconnect switches and synchronous rectification in bridge rectifiers. It delivers 491 A pulsed drain current, 0.82 V body diode forward voltage, and is AEC-Q101 qualified.

For engineers reviewing the IPDQ60R017S7AXTMA1 datasheet, IPDQ60R017S7AXTMA1 pinout, IPDQ60R017S7AXTMA1 application, or IPDQ60R017S7AXTMA1 equivalent, key selection criteria include R_DS(on) stability at 150 °C, dv/dt ruggedness (20 V/ns), Kelvin Source layout impact on ringing suppression, and thermal resistance (0.25 °C/W junction-to-case).

Technical Context

This CoolMOS S7A device implements superjunction charge compensation to achieve ultra-low R_DS(on) while maintaining 600 V blocking capability. Its internal Kelvin Source pin (Pin 2) separates driver return path from power source return, reducing gate loop inductance and enabling stable switching at extreme currents up to 491 A pulse.

The QDPAK package integrates a thermally optimized exposed tab (Pins 12–22 + Tab) for direct PCB copper connection, supporting 500 W power dissipation at T_C = 25 °C. Dynamic parameters-including 196 nC total gate charge, 35 ns turn-on delay, and 160 ns turn-off delay-are specified under standardized 300 V/29 A test conditions with 4.5 Ω gate resistor.

Key Specifications

Pinout & Package

IPDQ60R017S7AXTMA1 uses the PG-HDSOP-22 (QDPAK) surface-mount package with an exposed thermal tab. The 22-pin layout includes dedicated Kelvin Source (Pin 2), Gate (Pin 1), Power Source (Pins 3–11), and Drain (Pins 12–22 + Tab). MSL1 reflow compatibility and Pb-free construction support automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current static switch applications.

Compared with IPW60R017C7 and STW60N10F6, IPDQ60R017S7AXTMA1 uniquely combines Kelvin Source topology, AEC-Q101 qualification, and QDPAK thermal performance-making it optimal for space-constrained, high-reliability HV battery protection where layout-induced ringing must be minimized.

Availability

IPDQ60R017S7AXTMA1 is available at Aetrix Electronics and suitable for high-voltage battery disconnect switches, solid-state circuit breakers, synchronous rectifiers, and HV e-fuse protection requiring stable component supply across automotive, industrial, and renewable energy programs.

Supply support for IPDQ60R017S7AXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

The CoolMOS S7A series targets high-efficiency, high-reliability HV power conversion-specifically engineered for low-frequency, high-current applications such as battery isolation, circuit protection, and synchronous rectification where thermal density and switching stability are critical.

FAQ

Can the Kelvin Source (Pin 2) and Power Source (Pins 3–11) be shorted together?

No. Pin 2 (Kelvin Source) and Pins 3–11 (Power Source) serve distinct functions and must remain isolated. Shorting them eliminates the benefit of separate sense and power paths, degrading switching stability and increasing gate oscillation risk at high di/dt. The datasheet explicitly warns that interchange or shorting may cause malfunction.

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is approximately 22 A, derived from the derating curve in Figure 1 (P_tot vs. T_C) and the R_DS(on) vs. T_j relationship. This assumes T_j ≤ 150 °C and proper PCB copper area (≥6 cm²) per the R_thJA specification.

Is this device suitable for linear-mode operation?

No. The datasheet explicitly states: "The CoolMOS mentioned in this datasheet shall not be operated in linear mode." Operation in the ohmic region risks thermal runaway due to positive temperature coefficient of R_DS(on) and localized hot-spot formation-intended use is strictly as a saturated switch.

How does the QDPAK package compare to TO-247 in thermal performance?

The QDPAK (PG-HDSOP-22) achieves 0.25 °C/W R_thJC, matching high-end TO-247 packages, but with lower R_thJA (45–55 °C/W on 40 mm × 40 mm PCB) due to superior PCB copper coupling. Unlike TO-247, it eliminates mechanical mounting hardware and offers MSL1 reflow compatibility-ideal for high-density, automated HV power modules.