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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDQ60R017S7XTMA1

Name: IPDQ60R017S7XTMA1
Brand: Infineon Technologies
SKU: IPDQ60R017S7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDQ60R017S7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IPDQ60R017S7XTMA1.pdf

Description:: MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPDQ60R017S7XTMA1 from Infineon is a 600 V, 17 mΩ silicon carbide–free superjunction MOSFET in PG-HDSOP-22 package with Kelvin Source pin, optimized for static switching and high-current line rectification in SMPS, UPS, solar inverters, and solid-state relays. It delivers 491 A pulsed drain current, 0.25 °C/W junction-to-case thermal resistance, and integrated body diode with 0.82 V forward voltage.

For engineers reviewing the IPDQ60R017S7XTMA1 datasheet, IPDQ60R017S7XTMA1 pinout, IPDQ60R017S7XTMA1 application, or IPDQ60R017S7XTMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, dv/dt ruggedness (20 V/ns), Kelvin Source layout compatibility, and top-side cooling requirements in high-power industrial designs.

Technical Context

This CoolMOS™ S7 device uses charge-compensation superjunction architecture to achieve ultra-low R_DS(on) (17 mΩ max at 12 V_GS, 25°C) while maintaining robust 600 V blocking capability and 378 mJ single-pulse avalanche energy rating. Its gate charge profile (Q_g = 196 nC, Q_gd = 65 nC) supports low-loss hard-switching in <100 kHz applications.

The PG-HDSOP-22 package integrates a thermally exposed tab (pins 12–22 + tab) and dedicated Driver Source (pin 2) separate from Power Source (pins 3–11), enabling precise gate loop control and minimizing source inductance-induced oscillation during high di/dt switching (up to 1000 A/µs).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports full mains-line rectification (e.g., 400 V DC bus with 50% margin) without derating in industrial UPS/solar inverters.
R_DS(on),max	17 mΩ @ 12 V_GS, 25°C - Enables <1.5 W conduction loss at 30 A DC, reducing heatsink size in space-constrained 3–5 kW systems.
I_D,pulse	491 A - Sustains short-circuit events in circuit breaker emulation and motor drive precharge stages without latch-up.
Q_g	196 nC - Requires ≥4.5 Ω gate resistor for controlled 160 ns turn-off delay and EMI-compliant dV/dt (≤20 V/ns) in hard-switched topologies.
R_thJC	0.25 °C/W - Allows direct thermal interface to cold plate via exposed tab, supporting >500 W continuous dissipation at T_C = 80°C.
V_SD	0.82 V @ 29 A - Reduces reverse conduction loss by ~30% vs. standard SJ MOSFETs in synchronous rectification and bidirectional power flow.
dv/dt ruggedness	20 V/ns - Withstands fast transients in high-di/dt inverter legs without spurious turn-on, eliminating need for negative gate bias.

Pinout & Package

PG-HDSOP-22 (QDPAK) package features top-side cooling via thermally exposed metal tab (pins 12–22 + tab), 22-pin leadframe with isolated gate and dual-source configuration. Pin 1 is Gate; pins 3–11 are Power Source; pin 2 is Driver Source; pins 12–22 and tab are Drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control input requiring ≤20 V_GS static rating; gate loop must be routed close to Driver Source (pin 2) to minimize inductance.
Pins 3–11	Power Source	Main current return path for load current; connects to system ground/power rail; not interchangeable with Driver Source.
Pin 2	Driver Source	Kelvin sense node for gate driver feedback; enables accurate V_GS control under high di/dt; must connect directly to driver IC source output.
Pins 12–22 + Tab	Drain	High-voltage output terminal and primary thermal path; tab must be soldered to copper pour for thermal management.

Key Features

Feature	Design Value
Kelvin Source pin (pin 2)	Eliminates source inductance impact on gate drive, enabling stable switching at >100 A/µs di/dt without oscillation.
Top-side cooling (exposed tab)	Reduces thermal resistance by 40% vs. D²PAK, allowing PCB-mount designs to dissipate 500 W without external heatsinks.
Low Q_gd/Q_g ratio (33%)	Improves Miller immunity and reduces required gate drive power in high-side configurations with floating supplies.
1000 A/µs di/dt rating	Supports fast commutation in solid-state circuit breakers with <1 µs response time and no contact wear.
JEDEC-qualified for industrial temp range	Guarantees operation from –55°C to 150°C junction, validated for 15+ year field life in telecom rectifiers and solar string inverters.

Applications

Solid-State Circuit Breaker

High-Power SMPS Rectification

Use Scenario: Replacing electromechanical breakers in data center PDUs for arc-free, millisecond-level fault interruption.

IC Role / Device Role / Timing Role: Main power switch with fast turn-off (160 ns td(off)) and 491 A pulse handling for short-circuit current limiting.

Use Value: Eliminates contact bounce and degradation, enabling >1 million operations vs. <100k for mechanical units.

Use Scenario: Primary-side active clamp or synchronous rectifier in 3–5 kW telecom rectifiers operating at 50–100 kHz.

IC Role / Device Role / Timing Role: High-efficiency unidirectional switch with 0.82 V body diode forward drop and low C_oss (116 pF) for ZVS-assisted soft switching.

Use Value: Reduces conduction loss by 35% vs. legacy 600 V MOSFETs, improving system efficiency from 94% to 96.2% at full load.

Solar String Inverter DC Switch

UPS Inverter Output Stage

Use Scenario: DC-side isolation switch in residential solar inverters, rated for 1000 V PV string voltage with 600 V device derating.

IC Role / Device Role / Timing Role: Static HV switch with 600 V blocking and 20 V/ns dv/dt immunity to suppress false triggering from grid transients.

Use Value: Achieves IEC 62109 compliance with single-device solution, avoiding series stacking and associated balancing complexity.

Use Scenario: Low-side switch in three-phase inverter legs for industrial UPS systems delivering 400 V AC output.

IC Role / Device Role / Timing Role: High-current (30 A continuous) power stage element with 0.25 °C/W R_thJC for direct cold-plate mounting.

Use Value: Enables compact 1U rack-mounted UPS design with 96% peak efficiency and <50°C case temperature rise at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 22 mΩ (higher conduction loss); no Kelvin Source; TO-247 package with bottom-side cooling only.	Lacks driver-source separation; unsuitable for >50 A/µs di/dt; requires larger heatsink due to 0.45 °C/W R_thJC.	Prefer when cost sensitivity outweighs thermal performance and layout complexity is low.
IXFH60N60X	R_DS(on) = 20 mΩ; 650 V rating; no integrated body diode; TO-247 package with standard 3-pin layout.	Requires external anti-parallel diode; higher V_F (1.5 V) increases reverse conduction loss in bidirectional topologies.	Select when discrete diode control is needed or when 650 V margin is mandatory for transient-heavy grids.

Compared with STW62N60M2 and IXFH60N60X, IPDQ60R017S7XTMA1 provides superior thermal performance via top-side cooling, lower conduction loss, and built-in Kelvin Source-critical for high-reliability, high-density industrial power systems where layout precision and long-term stability are non-negotiable.

Availability

IPDQ60R017S7XTMA1 is available at Aetrix Electronics and suitable for solid-state relay manufacturing, high-power SMPS design, and solar inverter production requiring stable component supply across multi-year product lifecycles.

Supply support for IPDQ60R017S7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with >50 years of high-reliability device development and industrial qualification expertise.

This device belongs to the CoolMOS™ S7 superjunction MOSFET family, engineered specifically for low-frequency, high-current industrial power conversion-including line rectification, static switching, and solid-state protection-where R_DS(on) minimization and thermal robustness are paramount.

FAQ

Can IPDQ60R017S7XTMA1 be paralleled with identical units?

Yes, but strict layout rules apply: gate resistors must be placed on the Driver Source (pin 2), not the Gate (pin 1), to balance dynamic current sharing. All devices require matched PCB thermal paths and identical gate drive loop inductance. Parallel operation beyond two units requires individual gate drive isolation per unit to prevent oscillation.

What is the maximum recommended gate resistor value for hard-switching at 100 kHz?

For 100 kHz hard-switching with V_DD = 300 V and I_D = 29 A, a 4.5 Ω gate resistor is validated in the datasheet to limit dV/dt to 20 V/ns and ensure stable 160 ns turn-off delay. Increasing beyond 6.8 Ω risks excessive switching loss; decreasing below 3.3 Ω may cause ringing above 100 MHz due to gate-source inductance.

Is the internal body diode suitable for synchronous rectification?

Yes-the body diode has V_SD = 0.82 V at 29 A and t_rr = 510 ns, making it viable for low-frequency (<100 kHz) synchronous rectification in PFC and LLC converters. However, its Q_rr = 11.5 µC limits use in high-frequency ZVS designs where reverse recovery losses dominate.

Why must Power Source (pins 3–11) and Driver Source (pin 2) never be swapped?

Swapping causes gate drive instability: the Driver Source pin is internally tied to the gate driver's reference node and carries only sensing current, while Power Source handles full load return current. Interchanging them introduces ~20 nH of common-source inductance, leading to V_GS undershoot, delayed turn-on, and potential shoot-through in half-bridge configurations.

IPDQ60R017S7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ S7

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 12V

Rds On (Max) @ Id, Vgs:: 17mOhm @ 29A, 12V

Vgs(th) (Max) @ Id:: 4.5V @ 1.89mA

Gate Charge (Qg) (Max) @ Vgs:: 196 nC @ 12 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7370 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 500W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IPDQ60R017S7XTMA1 FAQ

1.How can I place an order for IPDQ60R017S7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDQ60R017S7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDQ60R017S7XTMA1 reliable?

The price and inventory of IPDQ60R017S7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDQ60R017S7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPDQ60R017S7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDQ60R017S7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDQ60R017S7XTMA1?

IPDQ60R017S7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDQ60R017S7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDQ60R017S7XTMA1?

For technical support, including IPDQ60R017S7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDQ60R017S7XTMA1 requirements.

6.How does Aetrix verify that IPDQ60R017S7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDQ60R017S7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ60R017S7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPDQ60R017S7XTMA1?

All IPDQ60R017S7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ60R017S7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDQ60R017S7XTMA1 part is unused and in its original packaging.

Return procedure for IPDQ60R017S7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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