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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDQ60R020CFD7XTMA1

Name: IPDQ60R020CFD7XTMA1
Brand: Infineon Technologies
SKU: IPDQ60R020CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDQ60R020CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IPDQ60R020CFD7XTMA1.pdf

Description:: HIGH POWER_NEW

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPDQ60R020CFD7XTMA1 from Infineon Technologies is a 600 V, 20 mΩ ultra-fast body diode CoolMOS™ CFD7 power MOSFET in PG-HDSOP-22 package with tab-connected drain (pins 12–22), gate on pin 1, and driver source on pin 2. It delivers 112 A continuous drain current at T_C = 25°C, 186 nC total gate charge, and 1300 A/µs diF/dt ruggedness-optimized for soft-switching LLC and phase-shift full-bridge converters in server PSUs and EV charging systems.

For engineers reviewing the IPDQ60R020CFD7XTMA1 datasheet, IPDQ60R020CFD7XTMA1 pinout, IPDQ60R020CFD7XTMA1 application, or IPDQ60R020CFD7XTMA1 equivalent, key selection criteria include R_DS(on) × Q_g FOM (lowest in SMD), reverse recovery charge Q_rr (1.10–2.20 µC), dv/dt ruggedness (70 V/ns for diode), and validated hard commutation robustness per JEDEC industrial qualification.

Technical Context

This device implements Infineon's CoolMOS™ CFD7 superjunction architecture with integrated fast-recovery body diode, enabling zero-voltage switching (ZVS) operation in resonant topologies. Its low Q_g (186 nC typ.) and minimized E_oss (21.5 µJ @ 400 V) reduce switching losses while maintaining high dv/dt immunity (120 V/ns MOSFET, 70 V/ns diode).

The PG-HDSOP-22 package features isolated tab (drain-connected), dedicated driver source (pin 2), and non-interchangeable source/sense pins-critical for stable paralleling and accurate gate drive referencing. Gate plateau voltage is 5.4 V, supporting standard 10 V gate drivers without overdrive risk.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage-supports 400 V bus designs with 50% margin for transient overvoltage in telecom/server SMPS.
R_DS(on),max	20 mΩ at T_j = 25°C-enables high-current conduction with <1.7 W conduction loss at 112 A DC.
Q_g,typ	186 nC-reduces gate drive power and enables higher-frequency operation in LLC converters up to 1 MHz.
Q_rr	1.10–2.20 µC @ 400 V-minimizes diode recovery loss and EMI in ZVS transitions.
diF/dt	1300 A/µs-ensures reliable hard commutation in asymmetric half-bridge and full-bridge inverters without oscillation.
E_oss	21.5 µJ @ 400 V-low stored output energy reduces turn-on loss and improves light-load efficiency.
T_j,max	150 °C-qualified per JEDEC for industrial applications, enabling compact heatsink design with R_thJC = 0.23 °C/W.

Pinout & Package

Package: PG-HDSOP-22 (22-pin surface-mount package with exposed thermal tab). The tab is electrically connected to drain (pins 12–22). Pin 1 is gate, pin 2 is driver source, and pins 3–11 are power source terminals. Source and sense source pins are not interchangeable-miswiring causes malfunction.

Pin/Terminal	Circuit Role	Design Meaning
Tab & Pins 12–22	Drain	High-current drain connection with direct thermal path to PCB copper; requires isolation from other layers.
Pin 1	Gate	Main gate input-requires low-inductance routing and external gate resistor placed at driver source (pin 2), not gate.
Pin 2	Driver Source	Reference node for gate driver IC; separates power return from signal return to suppress ground bounce during switching.
Pins 3–11	Power Source	Parallel source paths to minimize conduction resistance and inductance-must be routed symmetrically for current sharing.

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 178–267 ns and Qrr = 1.10–2.20 µC enable clean ZVS turn-on without tail current or voltage overshoot.
Low R_DS(on) × Q_g FOM	3.72 Ω·nC (20 mΩ × 186 nC)-lowest in SMD 600 V class, directly improving efficiency in high-frequency resonant converters.
Enhanced diF/dt ruggedness	1300 A/µs rating ensures stable operation under abrupt load steps and short-circuit conditions without latch-up.
JEDEC industrial qualification	Validated for 150 °C T_j operation and 1000-cycle temperature cycling-supports 10+ year field reliability in server/charging systems.
Optimized for soft switching	Reduced E_oss (21.5 µJ) and low C_iss/C_oss ratio (7395 pF / 146 pF) improve resonant tank control and reduce dead-time sensitivity.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter for AI server rack PSUs operating at 500 kHz.

IC Role / Device Role / Timing Role: High-side ZVS switch with synchronous rectification timing coordination via body diode conduction window.

Use Value: 0.8% system efficiency gain vs. CFD2 due to lower Q_rr and E_oss, reducing cooling requirements by 12%.

Use Scenario: Half-bridge primary switch in 48 V telecom rectifier with 400 V DC bus and 100 kHz–1 MHz variable frequency control.

IC Role / Device Role / Timing Role: Hard-switched high-side switch with controlled dv/dt during turn-off to limit EMI.

Use Value: 70 V/ns diode dv/dt rating prevents false triggering of protection circuits during line transients.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: Secondary-side active clamp switch in bidirectional OBC AC/DC stage handling 6.6 kW PFC + LLC combo.

IC Role / Device Role / Timing Role: Fast-recovery synchronous rectifier with body diode conducting during dead time in phase-shift modulation.

Use Value: 1300 A/µs diF/dt supports 200 A peak currents during regenerative braking without diode snap-off.

Use Scenario: Low-side switch in three-phase 10 kVA UPS inverter driving motor loads with frequent hard commutation events.

IC Role / Device Role / Timing Role: Robust freewheeling path with ultra-low R_DS(on) and high avalanche energy (424 mJ single-pulse).

Use Value: Eliminates need for external snubbers due to 120 V/ns MOSFET dv/dt ruggedness and 2.12 mJ repetitive avalanche rating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency soft-switching power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPDQ60R022CFD7XTMA1	R_DS(on),max = 22 mΩ; Q_g = 172 nC; identical package and diF/dt rating.	Slightly higher conduction loss but improved gate drive efficiency-better for <400 kHz operation where switching loss dominates.	Select when optimizing for gate driver power consumption over peak efficiency at full load.
IPW60R024P7XKSA1	TO-247-4 package; R_DS(on),max = 24 mΩ; Q_g = 165 nC; no integrated fast diode (standard CoolMOS™ P7).	Requires external SiC/Schottky diode for ZVS; higher thermal resistance (R_thJC = 0.35 °C/W) limits power density.	Choose only if board layout mandates through-hole mounting or existing TO-247 heatsink reuse is mandatory.

Compared with IPDQ60R020CFD7XTMA1, the CFD7 variant offers superior Q_rr and diF/dt performance versus the P7 series, while the 022 mΩ variant trades 10% R_DS(on) increase for 7.5% lower Q_g-making the 020 mΩ optimal for high-power, high-frequency LLC where conduction loss is critical.

Availability

IPDQ60R020CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and high-power-density SMD packaging.

Supply support for IPDQ60R020CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon and wide-bandgap technologies.

This part belongs to the CoolMOS™ CFD7 product line-designed specifically for soft-switching topologies including LLC and phase-shift full-bridge, emphasizing ultra-low Q_rr, high diF/dt ruggedness, and ease of implementation in high-efficiency power conversion.

FAQ

Can IPDQ60R020CFD7XTMA1 be paralleled with identical units?

Yes, but gate resistors must be placed on the driver source (pin 2), not the gate (pin 1), to avoid oscillation. Source and sense source pins are non-interchangeable-incorrect routing causes gate drive instability. Layout symmetry across all parallel devices is mandatory for current sharing.

What is the maximum recommended gate drive voltage?

The absolute maximum gate-source voltage is ±30 V (dynamic) and ±20 V (static). For reliable operation, use 10 V to 15 V gate drive-V_plateau is 5.4 V, so 10 V ensures full enhancement without overstressing the oxide. Do not exceed 20 V DC to prevent long-term degradation.

Is the body diode suitable for synchronous rectification?

Yes-the integrated ultra-fast body diode has trr = 178–267 ns and Q_rr = 1.10–2.20 µC, making it suitable for synchronous rectification in LLC and phase-shift converters where body diode conduction occurs during dead time. Its 1300 A/µs diF/dt rating ensures robustness during hard commutation.

Does this MOSFET require a Kelvin source connection?

Yes-pin 2 is the dedicated driver source (Kelvin source), separate from power source pins (3–11). This provides noise-immune gate drive referencing. Connecting gate driver return to power source pins introduces ground bounce and can cause spurious turn-on; always reference to pin 2.

IPDQ60R020CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 112A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 42.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 2.12mA

Gate Charge (Qg) (Max) @ Vgs:: 186 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7395 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 543W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IPDQ60R020CFD7XTMA1 FAQ

1.How can I place an order for IPDQ60R020CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDQ60R020CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDQ60R020CFD7XTMA1 reliable?

The price and inventory of IPDQ60R020CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDQ60R020CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPDQ60R020CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDQ60R020CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDQ60R020CFD7XTMA1?

IPDQ60R020CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDQ60R020CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDQ60R020CFD7XTMA1?

For technical support, including IPDQ60R020CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDQ60R020CFD7XTMA1 requirements.

6.How does Aetrix verify that IPDQ60R020CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDQ60R020CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ60R020CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPDQ60R020CFD7XTMA1?

All IPDQ60R020CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ60R020CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDQ60R020CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPDQ60R020CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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