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Infineon Technologies IPDQ60R022S7AXTMA1

Name: IPDQ60R022S7AXTMA1
Brand: Infineon Technologies
SKU: IPDQ60R022S7AXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDQ60R022S7AXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IPDQ60R022S7AXTMA1.pdf

Description:: MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPDQ60R022S7AXTMA1 from Infineon Technologies is a 600 V, 22 mΩ superjunction MOSFET in PG-HDSOP-22 (QDPAK) package with Kelvin Source pin, designed as a high-current static switch for low-frequency HV applications including circuit breakers and synchronous rectification in bridge rectifiers. It features 375 A pulsed drain current, 150 nC total gate charge, and AEC-Q101 qualification.

For engineers reviewing the IPDQ60R022S7AXTMA1 datasheet, IPDQ60R022S7AXTMA1 pinout, IPDQ60R022S7AXTMA1 application, or IPDQ60R022S7AXTMA1 equivalent, key selection criteria include R_DS(on) stability at 150 °C, dv/dt ruggedness (20 V/ns), Kelvin Source layout impact on ringing suppression, and thermal resistance (0.3 °C/W junction-to-case).

Technical Context

This CoolMOS S7A device implements a superjunction trench-gate structure optimized for <100 kHz switching, delivering ultra-low conduction loss while maintaining robust avalanche capability (289 mJ) and high dv/dt immunity. Its internal body diode supports synchronous rectification with 0.82 V forward voltage and 460 ns reverse recovery time.

The QDPAK package integrates a thermally enhanced exposed tab (pins 12–22 + tab) and dedicated Kelvin Source (pin 2), decoupling power and sense paths to minimize source inductance-critical for stable 375 A pulsed operation and reduced switching oscillation in high-current DC disconnects.

Key Specifications

Parameter	Value and Actual Design Meaning
R_DS(on), max	22 mΩ at V_GS = 12 V, I_D = 23 A, T_j = 25 °C - enables low conduction loss in high-current battery disconnect switches
V_(BR)DSS	600 V - rated blocking voltage for HV DC systems up to 400 V bus with margin
Q_g, typ	150 nC - defines gate drive energy requirement for 300 V/23 A hard-switched turn-on/off
I_D,pulse	375 A - supports short-circuit withstand and inrush current handling in HV E-fuse designs
R_thJC	0.3 °C/W - enables 416 W power dissipation at T_C = 25 °C, critical for SMD thermal management
V_SD	0.82 V at I_F = 23 A, T_j = 25 °C - lower forward drop than Si diodes for synchronous rectifier replacement
dv/dt ruggedness	20 V/ns - ensures reliable operation without spurious turn-on in noisy high-voltage transients

Pinout & Package

Package: PG-HDSOP-22 (QDPAK), MSL1, Pb-free, thermally enhanced with exposed copper tab (pins 12–22 + tab). Dimensions per Infineon Package Outline Document.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate control input; requires external gate resistor placement on Driver Source (pin 2) for paralleling stability
Pins 3–11	Power Source	Parallel-source connection for main current return path; shares thermal mass with tab
Pin 2	Driver Source (Kelvin)	Dedicated low-inductance sense path for gate driver feedback; not interchangeable with Power Source
Pins 12–22 + Tab	Drain	High-voltage drain node; tab is electrically connected to drain and serves as primary thermal interface

Key Features

Feature	Design Value
Kelvin Source configuration	Separates gate drive return from high-current source path, reducing parasitic inductance-induced ringing during 375 A switching
S7A superjunction technology	Delivers 22 mΩ R_DS(on) in QDPAK footprint-best-in-class conduction efficiency for 600 V MOSFETs
AEC-Q101 qualification	Validated for automotive-grade reliability in HV battery disconnect and e-fuse applications
Low Q_gd/Q_g ratio	49 nC / 150 nC = 0.33 - improves hard-switching efficiency and reduces Miller-induced turn-on risk
Enhanced dv/dt immunity	20 V/ns rating allows direct use in noisy 400 V DC systems without additional gate clamping

Applications

HV Battery Disconnect Switch

Circuit Breaker (AC/DC)

Use Scenario: High-voltage isolation of EV traction battery during crash or fault conditions.

IC Role / Device Role / Timing Role: Static high-side switch operating at <1 Hz, holding 400 V DC continuously with fast 375 A fault-current interruption.

Use Value: 22 mΩ R_DS(on) minimizes steady-state power loss and self-heating; Kelvin Source ensures clean turn-off under extreme di/dt.

Use Scenario: Solid-state replacement for electromechanical breakers in industrial UPS and solar inverters.

IC Role / Device Role / Timing Role: Low-frequency (<10 kHz) bidirectional switching element in DC link protection circuits.

Use Value: 289 mJ single-pulse avalanche energy withstands inductive load interruptions; 600 V rating covers 480 V AC line peaks with margin.

Synchronous Rectifier (Bridge)

HV E-Fuse

Use Scenario: Diode replacement in high-power secondary-side rectification of 300–400 V DC-DC converters.

IC Role / Device Role / Timing Role: Unidirectional power switch synchronized to transformer secondary waveform.

Use Value: 0.82 V V_SD reduces conduction loss vs. Si diode; 460 ns t_rr enables clean commutation at 50–100 kHz.

Use Scenario: Electronic fuse for battery management systems requiring sub-millisecond overcurrent response.

IC Role / Device Role / Timing Role: Fast-acting current limiter triggered by controller during overcurrent events.

Use Value: 375 A pulsed current rating supports 10× overload for 100 µs; low R_DS(on) enables precise current sensing via Kelvin Source.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current static switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPDQ60R025S7XTMA1	R_DS(on) = 25 mΩ (3 mΩ higher); identical package, pinout, and S7A process	Same circuit breaker and E-fuse use cases but with 13.6% higher conduction loss at full load	Select when marginally higher R_DS(on) is acceptable for cost optimization or availability reasons
IPP60R022C7XKSA1	TO-220FP package (no Kelvin Source); R_DS(on) = 22 mΩ; same 600 V rating and S7A die	Limited to lower-current or non-paralleled applications due to higher source inductance and no Kelvin sensing	Choose for legacy TO-220 designs where PCB rework is prohibitive, accepting reduced high-current stability

Compared with IPDQ60R022S7AXTMA1, the IPDQ60R025S7XTMA1 trades minimal R_DS(on) increase for potential cost benefit, while the IPP60R022C7XKSA1 sacrifices Kelvin Source advantages for through-hole compatibility-neither offers identical high-current SMD performance.

Availability

IPDQ60R022S7AXTMA1 is available at Aetrix Electronics and suitable for HV battery disconnect switches, solid-state circuit breakers, synchronous rectifiers in high-power DC-DC converters, and HV electronic fuses requiring stable component supply across automotive, industrial, and renewable energy programs.

Supply support for IPDQ60R022S7AXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and superjunction MOSFET technologies.

The CoolMOS S7A product line targets high-efficiency, high-reliability HV power switching in automotive battery systems and industrial protection devices-designed specifically for low-frequency, high-current static switching where thermal and avalanche robustness are critical.

FAQ

Can IPDQ60R022S7AXTMA1 be used in linear mode operation?

No. The datasheet explicitly prohibits linear-mode operation: "The CoolMOS mentioned in this datasheet shall not be operated in linear mode." Operation in the ohmic region risks thermal runaway due to positive temperature coefficient behavior and localized hot-spot formation. It is qualified only for switching applications with defined safe operating area boundaries.

What is the purpose of the Kelvin Source (Pin 2), and why can't it be swapped with Power Source pins?

Pin 2 provides a dedicated low-inductance return path for the gate driver, isolating gate loop impedance from high-current source paths (Pins 3–11). Swapping them introduces uncontrolled source inductance into the gate loop, causing severe ringing, delayed turn-off, and potential shoot-through failure-confirmed by Infineon's design note stating exchange "might lead to malfunction."

Is the PG-HDSOP-22 package compatible with standard reflow soldering processes?

Yes. The package is MSL1 rated with peak reflow temperature tolerance up to 260 °C, fully compatible with standard lead-free reflow profiles. Its exposed drain tab ensures efficient heat transfer to the PCB, and the footprint aligns with IPC-7351B SMD land pattern guidelines for QDPAK packages.

How does the 20 V/ns dv/dt ruggedness specification impact system-level design?

This rating means the device resists false turn-on during rapid voltage transients up to 20 V/ns across the drain-source terminals-critical in 400 V DC systems with fast-switching adjacent devices or cable-borne noise. It eliminates need for external gate resistors >5.3 Ω or active clamping in most industrial breaker layouts, simplifying gate drive design.

IPDQ60R022S7AXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 12V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 23A, 12V

Vgs(th) (Max) @ Id:: 4.5V @ 1.44mA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 12 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5640 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 416W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IPDQ60R022S7AXTMA1 FAQ

1.How can I place an order for IPDQ60R022S7AXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDQ60R022S7AXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDQ60R022S7AXTMA1 reliable?

The price and inventory of IPDQ60R022S7AXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDQ60R022S7AXTMA1 is usually 5 days.

3.What payment methods are accepted for IPDQ60R022S7AXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDQ60R022S7AXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDQ60R022S7AXTMA1?

IPDQ60R022S7AXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDQ60R022S7AXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDQ60R022S7AXTMA1?

For technical support, including IPDQ60R022S7AXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDQ60R022S7AXTMA1 requirements.

6.How does Aetrix verify that IPDQ60R022S7AXTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDQ60R022S7AXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ60R022S7AXTMA1 meets industry standards.

7.What is the process for return or replacement of IPDQ60R022S7AXTMA1?

All IPDQ60R022S7AXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ60R022S7AXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDQ60R022S7AXTMA1 part is unused and in its original packaging.

Return procedure for IPDQ60R022S7AXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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