Infineon Technologies IPDQ60R022S7XTMA1

Overview

IPDQ60R022S7XTMA1 from Infineon is a 600 V, 22 mΩ silicon carbide–free superjunction MOSFET in PG-HDSOP-22-1 package with Kelvin Source pin, optimized for static switching and high-current line rectification in SMPS, UPS, solar inverters, and solid-state relays. It delivers 375 A pulsed drain current, 0.3 °C/W junction-to-case thermal resistance, and 150 nC total gate charge.

For engineers reviewing the IPDQ60R022S7XTMA1 datasheet, IPDQ60R022S7XTMA1 pinout, IPDQ60R022S7XTMA1 application, or IPDQ60R022S7XTMA1 equivalent, key selection criteria include R_DS(on) stability at 150 °C, dv/dt ruggedness (20 V/ns), internal body diode performance (V_SD = 0.82 V), and top-side cooling capability enabled by the exposed tab.

Technical Context

This CoolMOS™ S7 device uses charge-compensation superjunction architecture to achieve ultra-low R_DS(on) (22 mΩ max) while maintaining 600 V blocking voltage and robust avalanche rating (289 mJ). Its Kelvin Source configuration separates driver return path from power source, reducing gate loop inductance and enabling clean turn-off under high di/dt conditions.

The PG-HDSOP-22-1 package integrates an electrically isolated, thermally conductive tab for top-side cooling-critical for high-power density designs where PCB copper area is constrained. The device's 1000 A/µs diode commutation speed and 460 ns reverse recovery time support fast freewheeling in hard-switched PFC and inverter legs.

Key Specifications

Pinout & Package

PG-HDSOP-22-1 is a surface-mount, thermally enhanced package with 22-pin layout and exposed metal tab (Drain-connected) on the top side for direct heatsink attachment. Pin 1 is Gate, Pins 3–11 are Driver Source terminals, Pin 2 is Power Source, and Pins 12–22 plus the tab form the common Drain connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current static switching applications.

Compared with IPW60R024P7XKSA1 and IPP60R024C7XKSA1, IPDQ60R022S7XTMA1 offers superior thermal performance (0.3 vs. ≥0.45 °C/W), lower R_DS(on), and Kelvin Source isolation-making it optimal for compact, high-reliability static switching where gate drive integrity and thermal headroom are critical.

Availability

IPDQ60R022S7XTMA1 is available at Aetrix Electronics and suitable for solid-state relays, high-power SMPS line rectification, and UPS inverter output stages requiring stable component supply, long-lifecycle support, and JEDEC-qualified industrial-grade reliability.

Supply support for IPDQ60R022S7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the CoolMOS™ S7 superjunction MOSFET product line, engineered specifically for low-frequency, high-current static switching applications-including SSRs, circuit breakers, and high-efficiency rectification-where conduction loss, thermal efficiency, and long-term reliability dominate design priorities.

FAQ

Can IPDQ60R022S7XTMA1 be paralleled with identical units?

Yes, but only with strict layout symmetry and individual gate resistors placed on the Driver Source (Pins 3–11), not the Gate. The Kelvin Source architecture ensures balanced current sharing under high di/dt, provided trace inductance and thermal coupling are matched across devices. Avoid mixing with non-Kelvin variants.

What is the maximum safe operating temperature for continuous conduction?

The device is rated for continuous operation up to T_j = 150 °C, with R_DS(on) increasing to 46 mΩ at that temperature. For 24 A DC current, junction temperature must be maintained ≤135 °C using the 0.3 °C/W R_thJC path and appropriate heatsink interface (e.g., thermal pad ≤0.5 °C·in²/W).

Is the internal body diode suitable for freewheeling in hard-switched topologies?

Yes-the body diode has V_SD = 0.82 V and t_rr = 460 ns at 23 A, making it viable for freewheeling in PFC boost diodes or inverter leg commutation. However, its Q_rr = 9 µC necessitates snubber design or synchronous control to avoid voltage overshoot during reverse recovery.

Why must Source and Driver Source pins not be exchanged?

Source (Pin 2) carries full load current and connects directly to the power ground plane, while Driver Source (Pins 3–11) serves only as the low-current reference for the gate driver. Swapping them introduces large voltage spikes on the gate loop due to source inductance, causing erratic turn-on/turn-off and potential device destruction under load.