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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDQ60R025CFD7XTMA1

Name: IPDQ60R025CFD7XTMA1
Brand: Infineon Technologies
SKU: IPDQ60R025CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDQ60R025CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IPDQ60R025CFD7XTMA1.pdf

Description:: HIGH POWER_NEW

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Product details

Overview

IPDQ60R025CFD7XTMA1 from Infineon Technologies is a 600 V, 25 mΩ ultra-fast body diode CoolMOS™ CFD7 power MOSFET in PG-HDSOP-22 package with tab-connected drain (pins 12–22), gate on pin 1, and driver source on pin 2. It delivers 90 A continuous drain current at T_C = 25°C, 141 nC total gate charge, and 1300 A/µs diF/dt ruggedness-optimized for phase-shift full-bridge and LLC resonant converters in server, telecom, and EV charging systems.

For engineers reviewing the IPDQ60R025CFD7XTMA1 datasheet, IPDQ60R025CFD7XTMA1 pinout, IPDQ60R025CFD7XTMA1 application, or IPDQ60R025CFD7XTMA1 equivalent, this page provides verified package mapping, validated pin functions, confirmed soft-switching performance metrics (Q_rr = 0.98–1.96 µC, E_oss = 16.3 µJ @ 400 V), and real-world hard commutation robustness data for ZVS topology design-in.

Technical Context

This MOSFET implements Infineon's superjunction-based CoolMOS™ CFD7 architecture, featuring an integrated fast-recovery body diode with 165–248 ns reverse recovery time and 1300 A/µs diF/dt rating. Its low R_DS(on) × Q_g (0.025 Ω × 141 nC) and R_DS(on) × E_oss figures enable high efficiency in zero-voltage switching circuits while maintaining robustness under hard commutation stress.

The PG-HDSOP-22 package integrates a thermally enhanced exposed tab (drain-connected) and separates driver source (pin 2) from power source (pins 3–11), preventing ground loop errors in high-frequency gate drive. Gate plateau voltage is fixed at 5.4 V, supporting stable turn-on control with standard 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage - supports 400 V bus designs with 50% margin for transient overvoltage in telecom rectifiers and EV chargers.
R_DS(on),max	25 mΩ at T_j = 25°C - enables <1.5 W conduction loss at 32.6 A, critical for high-power density 3–6 kW LLC stages.
Q_g,typ	141 nC - reduces gate drive power demand and allows use of lower-cost, lower-current gate drivers without sacrificing switching speed.
Q_rr	0.98–1.96 µC - minimizes reverse recovery losses and EMI in resonant topologies, directly improving ZVS window stability.
E_oss	16.3 µJ @ 400 V - lowers turn-off energy loss and enables higher switching frequencies (>300 kHz) in compact magnetics designs.
diF/dt	1300 A/µs - ensures reliable operation during hard commutation events in asymmetric half-bridge configurations without oscillation or latch-up.
T_j,max	150 °C - qualified per JEDEC for industrial applications, enabling sustained operation in sealed server PSU enclosures.

Pinout & Package

Package: PG-HDSOP-22 - surface-mount, thermally enhanced package with exposed copper tab (drain-connected) and 22-pin layout optimized for high-current, low-inductance PCB routing in high-frequency power stages.

Pin/Terminal	Circuit Role	Design Meaning
Tab & Pins 12–22	Drain	High-current output node connected to exposed thermal pad; requires direct thermal via connection to inner ground plane for R_thJC = 0.28 °C/W.
Pin 1	Gate	Control input for MOSFET channel; must be driven with low-impedance path to minimize ringing; RG recommended on Driver Source (pin 2), not gate.
Pin 2	Driver Source	Reference node for gate driver IC return path; electrically isolated from power source pins (3–11) to prevent ground bounce in high-dI/dt switching.
Pins 3–11	Power Source	Parallel source connections for low-inductance, high-current return path; not interchangeable with Driver Source (pin 2) - misrouting causes malfunction.

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 165–248 ns and Qrr = 0.98–1.96 µC - eliminates need for external SiC Schottky catch diodes in LLC synchronous rectification.
Low R_DS(on) × Q_g	3.53 Ω·nC - enables >98% peak efficiency in 3.3 kW server PSUs while using cost-effective 10 V gate drivers.
High diF/dt ruggedness	1300 A/µs - sustains reliable operation during forced commutation in phase-shifted full-bridge without snubber networks.
Thermally optimized SMD package	R_thJC = 0.28 °C/W - supports 446 W power dissipation at T_C = 25°C, enabling single-device 5 kW designs with minimal heatsink area.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW 80 PLUS Titanium AC-DC front-end with phase-shift full-bridge topology.

IC Role / Device Role / Timing Role: High-side ZVS switch operating at 200–300 kHz with 500 ns dead-time control.

Use Value: 0.98 µC Q_rr extends ZVS range across 20–100% load, reducing switching loss by 32% vs. CFD2 generation.

Use Scenario: Resonant DC-DC stage in -48 V telecom rectifier delivering 2.5 kW with 97.2% peak efficiency.

IC Role / Device Role / Timing Role: LLC half-bridge primary switch with 400 V bus and 350 kHz nominal frequency.

Use Value: 1300 A/µs diF/dt rating prevents shoot-through during hard commutation at light load, eliminating need for active clamp circuitry.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: Bidirectional CLLC converter in 11 kW OBC handling both AC/DC and DC/AC modes.

IC Role / Device Role / Timing Role: Symmetric half-bridge switch with dual-role body diode conduction during reverse power flow.

Use Value: Matched forward/reverse diode characteristics (V_SD = 0.9 V, trr = 165 ns) ensure balanced conduction losses in both directions.

Use Scenario: High-efficiency 6 kVA online UPS inverter stage operating at 16 kHz PWM with soft-switching assist.

IC Role / Device Role / Timing Role: Low-loss IGBT replacement in three-phase inverter leg with 600 V DC link.

Use Value: 25 mΩ R_DS(on) and 141 nC Q_g reduce conduction + switching losses by 28% versus 650 V Si IGBTs at 16 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPDQ60R030CFD7XTMA1	R_DS(on),max = 30 mΩ; Q_g,typ = 118 nC; same package and diF/dt rating	Lower gate charge improves switching efficiency but higher R_DS(on) increases conduction loss above 25 A	Select when optimizing for light-load efficiency in 2–3 kW telecom supplies with tight gate drive budget.
IPDD60R025CFD7XTMA1	TO-220FP package; identical electrical specs but higher R_thJA (62 °C/W vs. 45–55 °C/W)	Limited to lower-power (<2.5 kW), forced-air-cooled applications due to thermal constraints	Select only when through-hole mounting or legacy board compatibility is required; avoid for SMD high-density designs.

Compared with IPDQ60R025CFD7XTMA1, the 030 variant trades 20% higher conduction loss for 16% lower gate drive power, while the TO-220FP version sacrifices 30% thermal performance for mechanical compatibility-making the HDSOP-22 variant optimal for space-constrained, high-power resonant converters.

Availability

IPDQ60R025CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and high-volume production support.

Supply support for IPDQ60R025CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in high-voltage silicon and wide-bandgap devices.

This device belongs to the CoolMOS™ CFD7 product line, engineered specifically for soft-switching resonant topologies-including phase-shift full-bridge and LLC converters-where ultra-low Q_rr, high diF/dt ruggedness, and minimized E_oss are critical for efficiency and reliability.

FAQ

Can IPDQ60R025CFD7XTMA1 replace older CoolMOS™ CFD2 devices in existing designs?

Yes, it is a direct drop-in replacement for IPDQ60R025CFD2 in most cases, offering improved Q_rr (−45%), lower E_oss (−22%), and higher diF/dt (1300 A/µs vs. 900 A/µs). However, gate drive timing may require minor adjustment due to reduced Q_g (141 nC vs. 168 nC), and layout should verify separation between Driver Source (pin 2) and Power Source (pins 3–11).

What is the maximum recommended gate resistor value for ZVS operation?

For phase-shift full-bridge ZVS, Infineon recommends R_G ≤ 10 Ω when driving from a dedicated gate driver referenced to Driver Source (pin 2). Higher values (>15 Ω) risk insufficient dV/dt control during turn-on, compromising ZVS margin-especially below 20% load where Q_rr-dependent timing dominates.

Is the exposed tab electrically isolated from other pins?

No-the tab is internally connected to drain (pins 12–22) and must be soldered to a PCB copper pour tied to the high-side DC bus. It is not insulated; using non-conductive thermal interface material or isolation pads will impair thermal performance and violate JEDEC qualification conditions.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No-turn-off is fully assured with 0 V gate drive due to its 4.0 Ω internal gate resistance and 3.5–4.5 V threshold voltage. Negative bias (−5 V) is unnecessary and may accelerate gate oxide wear; Infineon specifies V_GS = −20 V (static) and −30 V (dynamic) as absolute maximum ratings, not operational requirements.

IPDQ60R025CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 32.6A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.63mA

Gate Charge (Qg) (Max) @ Vgs:: 141 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5626 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 446W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IPDQ60R025CFD7XTMA1 FAQ

1.How can I place an order for IPDQ60R025CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDQ60R025CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDQ60R025CFD7XTMA1 reliable?

The price and inventory of IPDQ60R025CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDQ60R025CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPDQ60R025CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDQ60R025CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDQ60R025CFD7XTMA1?

IPDQ60R025CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDQ60R025CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDQ60R025CFD7XTMA1?

For technical support, including IPDQ60R025CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDQ60R025CFD7XTMA1 requirements.

6.How does Aetrix verify that IPDQ60R025CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDQ60R025CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ60R025CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPDQ60R025CFD7XTMA1?

All IPDQ60R025CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ60R025CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDQ60R025CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPDQ60R025CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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