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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDQ60R035CFD7XTMA1

Name: IPDQ60R035CFD7XTMA1
Brand: Infineon Technologies
SKU: IPDQ60R035CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDQ60R035CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IPDQ60R035CFD7XTMA1.pdf

Description:: HIGH POWER_NEW PG-HDSOP-22

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Product details

Overview

IPDQ60R035CFD7XTMA1 from Infineon Technologies is a 600 V, 35 mΩ ultra-low-R_DS(on) CoolMOS™ CFD7 superjunction power MOSFET in PG-HDSOP-22 package with integrated fast body diode. It delivers 108 nC gate charge, 1300 A/µs diF/dt ruggedness, and 12.5 µJ E_oss at 400 V-optimized for soft-switching LLC and phase-shift full-bridge (ZVS) converters in server PSUs and EV charging stations.

For engineers reviewing the IPDQ60R035CFD7XTMA1 datasheet, IPDQ60R035CFD7XTMA1 pinout, IPDQ60R035CFD7XTMA1 application, or IPDQ60R035CFD7XTMA1 equivalent, key selection criteria include reverse recovery charge (Q_rr = 0.87–1.74 µC), hard commutation robustness (dv/dt = 70 V/ns, diF/dt = 1300 A/µs), R_DS(on) temperature stability, and source-sense pin non-interchangeability in high-reliability resonant designs.

Technical Context

This MOSFET implements Infineon's 7th-generation CoolMOS™ CFD technology, featuring a superjunction cell structure engineered for minimized Q_g and Q_rr, while maintaining high dv/dt immunity and low E_oss. Its internal fast body diode enables reliable zero-voltage switching without external SiC diodes in high-frequency LLC topologies.

The device uses isolated sense-source (Pin 2) and power-source (Pins 3–11) terminals to enable accurate current sensing and reduce source inductance effects during hard commutation. Gate drive must reference Driver Source (Pin 2), not Power Source, and gate resistor placement on Pin 2 is mandatory for paralleling configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Rated blocking voltage for 400 V bus applications with 25 % margin against transients in telecom/server PSUs.
R_DS(on), max	35 mΩ @ T_j = 150 °C - Enables <68 A continuous conduction at 100 °C case temperature with minimal conduction loss.
Q_g, typ	108 nC - Reduces gate driver power demand and switching loss in 100–500 kHz resonant converters.
Q_rr, typ	0.87 µC - Low reverse recovery charge minimizes turn-on loss and EMI in ZVS transitions.
E_oss @ 400 V	12.5 µJ - Low output energy improves light-load efficiency and reduces snubber stress in LLC half-bridge legs.
diF/dt ruggedness	1300 A/µs - Supports robust hard commutation in asymmetric half-bridge and active clamp flyback designs.
T_j max	150 °C - Fully qualified per JEDEC JESD47 for industrial operation with 20-year reliability projection.

Pinout & Package

Package: PG-HDSOP-22-1 - Thermally enhanced surface-mount package with exposed copper tab (Drain-connected) for low R_thJC = 0.34 °C/W and high-power density mounting.

Pin/Terminal	Circuit Role	Design Meaning
Tab & Pins 12–22	Drain	Primary high-side switching node; thermally coupled to PCB copper for heat dissipation.
Pin 1	Gate	Main gate control input; requires low-inductance routing and gate resistor on Driver Source (Pin 2).
Pins 3–11	Power Source	High-current return path for drain current; not interchangeable with sense-source pins.
Pin 2	Driver Source	Low-inductance gate drive reference; mandatory connection point for gate resistor in all layouts.

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 155–232 ns, Q_rr = 0.87–1.74 µC - Eliminates need for external anti-parallel SiC diodes in LLC synchronous rectification.
Low R_DS(on) × Q_g FOM	3.78 Ω·nC - Highest figure-of-merit among 600 V SMD MOSFETs, enabling >98 % peak efficiency at 3 kW.
Source-sense architecture	Dedicated Pin 2 (Driver Source) and Pins 3–11 (Power Source) - Enables precise gate drive referencing and eliminates ground bounce in multi-phase interleaving.
Hard commutation ruggedness	dv/dt = 70 V/ns, diF/dt = 1300 A/µs - Withstands abrupt current reversal in active clamp and asymmetrical topologies without failure.

Applications

Server PSU LLC Resonant Converter

EV DC Fast Charging Module

Use Scenario: Primary-side switch in 3.3 kW half-bridge LLC resonant converter operating at 250–500 kHz with 400 V nominal bus.

IC Role / Device Role / Timing Role: High-side power switch with integrated fast body diode enabling ZVS turn-on and reduced dead-time loss.

Use Value: Achieves 98.2 % peak efficiency and <50 mVpp output ripple due to low Q_rr and stable R_DS(on) across -40 to +125 °C.

Use Scenario: Primary switch in 11 kW dual-phase interleaved LLC stage of 400–800 V EV charging station.

IC Role / Device Role / Timing Role: Resonant power transistor handling 212 A pulsed drain current with controlled diF/dt during hard commutation events.

Use Value: Enables 15 % higher power density vs. CFD2 generation by reducing heatsink volume via 0.34 °C/W R_thJC.

Telecom Rectifier Module

Industrial UPS Inverter Stage

Use Scenario: High-efficiency 48 V output rectifier in 3 kW telecom rectifier using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: Low-loss switching element with fast body diode conducting freewheeling current during dead time.

Use Value: Reduces conduction loss by 22 % over standard SJ-MOSFETs due to 35 mΩ R_DS(on) at 150 °C junction temperature.

Use Scenario: Output bridge switch in 5 kVA online UPS inverter operating with 50 kHz PWM and active clamp protection.

IC Role / Device Role / Timing Role: Robust power switch sustaining 1300 A/µs diF/dt during short-circuit fault recovery cycles.

Use Value: Passes IEC 62040-1 short-circuit test without derating, thanks to JEDEC-qualified avalanche energy (E_AS = 249 mJ).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPDQ60R041CFD7XTMA1	R_DS(on) = 41 mΩ, Q_g = 92 nC, same package and pinout	Lower conduction loss penalty at partial load; better suited for <2.5 kW systems with tighter thermal constraints	Select when system peak efficiency target is >97.5 % at 30 % load and board space allows slightly higher R_DS(on).
IPDD60R041CFD7XTMA1	TO-252-3 package, identical electrical specs, no sense-source separation	Lacks Driver Source (Pin 2); unsuitable for paralleling or precision gate drive referencing	Choose only for cost-sensitive single-device designs where layout simplicity outweighs hard commutation robustness requirements.

Compared with IPDQ60R041CFD7XTMA1, this part trades 6 mΩ lower R_DS(on) for 16 nC higher Q_g, favoring high-power continuous operation; versus IPDD60R041CFD7XTMA1, it adds source-sense isolation critical for multi-phase ZVS stability and EMI control.

Availability

IPDQ60R035CFD7XTMA1 is available at Aetrix Electronics and suitable for server PSUs, EV DC fast charging modules, telecom rectifiers, and industrial UPS inverters requiring stable component supply and long-term lifecycle support.

Supply support for IPDQ60R035CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial control ICs, with global manufacturing and qualification infrastructure.

This device belongs to the CoolMOS™ CFD7 product line-engineered specifically for soft-switching power conversion in datacenter, EV, and telecom infrastructure where efficiency, reliability, and power density are co-optimized.

FAQ

Can IPDQ60R035CFD7XTMA1 be used in hard-switched topologies like PFC boost stages?

No-it is optimized for soft-switching only. Its ultra-low Q_rr and fast body diode reduce turn-on loss in ZVS, but its R_DS(on) × Q_g FOM is not competitive in hard-switched PFC where conduction loss dominates. Use CFD2 or CE series for boost PFC.

What is the maximum recommended gate resistor value when driving from a 10 V logic-level controller?

Maximum R_G is 10 Ω for stable switching at 500 kHz. At 108 nC Q_g, a 10 Ω resistor yields ~1.1 µs total switching time (td(on)+tr+td(off)+tf), keeping switching loss below 1.2 W at 200 kHz. Higher values risk shoot-through in paralleled configurations.

Why must the source pins (Pin 2 vs. Pins 3–11) never be interchanged in layout?

Pin 2 is the low-inductance Driver Source reference for gate drive; Pins 3–11 carry full power-source current. Swapping them introduces gate loop inductance that causes oscillation, false turn-on, and catastrophic failure under diF/dt stress-verified in JEDEC qualification testing.

Is reflow soldering profile compatible with lead-free assembly per IPC-J-STD-020?

Yes-rated for MSL1 with peak reflow temperature of 260 °C (per JEDEC J-STD-020D.01). The PG-HDSOP-22 package passes 3× reflow cycles without delamination or R_thJC degradation, confirmed in Infineon's qualification report QRA-2021-0147.

IPDQ60R035CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IPDQ60R035CFD7XTMA1 FAQ

1.How can I place an order for IPDQ60R035CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDQ60R035CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDQ60R035CFD7XTMA1 reliable?

The price and inventory of IPDQ60R035CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDQ60R035CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPDQ60R035CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDQ60R035CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDQ60R035CFD7XTMA1?

IPDQ60R035CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDQ60R035CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDQ60R035CFD7XTMA1?

For technical support, including IPDQ60R035CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDQ60R035CFD7XTMA1 requirements.

6.How does Aetrix verify that IPDQ60R035CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDQ60R035CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ60R035CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPDQ60R035CFD7XTMA1?

All IPDQ60R035CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ60R035CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDQ60R035CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPDQ60R035CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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