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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDQ60R040S7AXTMA1

Name: IPDQ60R040S7AXTMA1
Brand: Infineon Technologies
SKU: IPDQ60R040S7AXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDQ60R040S7AXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IPDQ60R040S7AXTMA1.pdf

Description:: MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPDQ60R040S7AXTMA1 from Infineon Technologies is a 600 V, 40 mΩ superjunction MOSFET in PG-HDSOP-22 (QDPAK) package with Kelvin Source configuration, optimized for low-frequency, high-current switching in HV battery disconnect switches and circuit breakers. It features 83 nC total gate charge, 0.82 V body diode forward voltage, 207 A pulsed drain current, and AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the IPDQ60R040S7AXTMA1 datasheet, IPDQ60R040S7AXTMA1 pinout, IPDQ60R040S7AXTMA1 application, or IPDQ60R040S7AXTMA1 equivalent, key selection criteria include R_DS(on) stability at 150 °C, Kelvin Source layout impact on ringing suppression, dv/dt ruggedness (20 V/ns), and thermal resistance (0.46 °C/W junction-to-case).

Technical Context

This device implements Infineon's CoolMOS™ SJ S7A technology - a trench-gated superjunction architecture enabling ultra-low R_DS(on) (40 mΩ max) while maintaining 600 V blocking capability and robust avalanche energy rating (159 mJ). Its internal body diode supports synchronous rectification replacement in bridge configurations.

The PG-HDSOP-22 package integrates a dedicated Kelvin Source (Pin 2) separate from power source pins (3–11), reducing source inductance to improve switching stability under extreme current transients (di/dt up to 1000 A/µs). Gate drive requires careful resistor placement on Driver Source, not Gate, per Infineon's paralleling guidance.

Key Specifications

Parameter	Value and Actual Design Meaning
R_DS(on), max	40 mΩ at V_GS = 12 V, I_D = 13 A, T_j = 25 °C - enables low conduction loss in high-current DC switch applications
V_(BR)DSS	600 V - rated for HV battery systems (e.g., 400–800 V EV architectures) and industrial AC/DC disconnects
Q_g, typ	83 nC - defines gate drive power requirement and influences switching speed in low-frequency (<100 kHz) operation
V_SD	0.82 V at I_F = 13 A, T_j = 25 °C - lower forward drop than standard silicon diodes, supporting efficient synchronous rectification
T_j max	175 °C (extended, ≤50 h) - allows short-term overload handling in fault-clearing scenarios like e-fuse activation
R_thJC	0.46 °C/W - enables high-power dissipation (272 W at T_C = 25 °C) with minimal thermal bottleneck at the die-to-package interface
dv/dt ruggedness	20 V/ns - ensures reliable turn-off without spurious conduction in noisy high-voltage bus environments

Pinout & Package

IPDQ60R040S7AXTMA1 uses the PG-HDSOP-22 (QDPAK) surface-mount package with exposed thermal tab (MSL1, Pb-free, compatible with standard reflow profiles up to 260 °C). The 22-pin layout includes dedicated Kelvin Source and multi-pin parallel drain/source terminals for low-inductance, high-current PCB routing.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Main gate control input; requires external gate resistor placed on Driver Source (Pin 2), not directly on this pin
2	Driver Source (Kelvin Source)	Reference node for gate driver return path; isolates gate loop from high-current source paths to suppress ringing
3–11	Power Source	Parallel source terminals carrying main load current; connected internally to source metallization for low R_DS(on)
12–22 + Tab	Drain	High-current drain connection; tab is electrically and thermally tied to drain, mounted to heatsink or copper pour

Key Features

Feature	Design Value
Kelvin Source configuration	Separate Driver Source (Pin 2) reduces gate loop inductance by >50%, improving switching stability at di/dt ≥1000 A/µs
S7A superjunction technology	Delivers 40 mΩ R_DS(on) in QDPAK footprint - 25% lower on-resistance than prior S6 generation at same voltage class
AEC-Q101 qualification	Validated for automotive HV battery systems including disconnect switches and e-fuses requiring zero defect reliability
Low V_SD body diode	0.82 V forward drop enables direct replacement of 600 V Si diodes in bridge rectifiers, reducing conduction loss by ~30%
MSL1 QDPAK package	Enables automated SMT assembly without moisture sensitivity concerns; thermal tab provides direct die-to-heatsink path (R_thJC = 0.46 °C/W)

Applications

High-Voltage Battery Disconnect Switch

Circuit Breaker (HV DC)

Use Scenario: Isolation of 400–800 V traction battery during crash events or maintenance in electric vehicles.

IC Role / Device Role / Timing Role: Static high-side HV switch with fail-safe open-circuit behavior; operates in on/off mode only (no linear regulation).

Use Value: 600 V rating and 207 A pulsed current support enable single-device isolation of 150 kW+ battery packs without paralleling.

Use Scenario: Solid-state protection for DC microgrids and energy storage systems requiring sub-100 µs fault clearing.

IC Role / Device Role / Timing Role: High-current, low-duty-cycle switching element triggered by protection controller; leverages fast fall time (9 ns) and high dv/dt immunity.

Use Value: Kelvin Source minimizes oscillation during rapid current interruption, preventing false tripping in noisy EMI environments.

High-Power Synchronous Rectifier

Industrial HV E-Fuse

Use Scenario: Replacement of 600 V Si diodes in secondary-side rectification of telecom and server PSUs (>5 kW).

IC Role / Device Role / Timing Role: Unidirectional current switch synchronized to transformer voltage polarity; body diode conducts reverse recovery before turn-on.

Use Value: 0.82 V V_SD and 360 ns t_rr reduce conduction and switching losses versus Schottky alternatives, improving efficiency by 0.8–1.2% at full load.

Use Scenario: Electronic overcurrent protection in industrial motor drives and photovoltaic inverters where mechanical fuses are too slow.

IC Role / Device Role / Timing Role: Current-sensing controlled switch that opens within 100 µs upon fault detection; relies on avalanche energy rating (159 mJ) for safe energy absorption.

Use Value: Extended 175 °C junction rating allows brief overload survival during coordinated protection sequencing without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current static switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R040C7XKSA1	Same 600 V / 40 mΩ rating but in TO-247 package; no Kelvin Source; higher R_thJA (62 °C/W vs 45–55 °C/W)	Limited to lower-power or forced-air-cooled designs; unsuitable for compact SMD layouts requiring minimal source inductance	Select when board space permits through-hole mounting and gate drive layout constraints are less critical
IPP60R040C7XKSA1	PG-TO220 package; identical die but no Kelvin Source; 14 A continuous rating (vs 14 A @ T_C = 140 °C for IPDQ60R040S7A)	Lower thermal performance and no di/dt optimization; not qualified to AEC-Q101	Choose for cost-sensitive industrial applications where automotive qualification and extreme di/dt immunity are unnecessary

Compared with IPW60R040C7XKSA1 and IPP60R040C7XKSA1, IPDQ60R040S7AXTMA1 delivers superior thermal management via its QDPAK package, enables stable high-di/dt switching through Kelvin Source separation, and meets automotive-grade reliability requirements - making it the sole choice for space-constrained, high-reliability HV battery systems.

Availability

IPDQ60R040S7AXTMA1 is available at Aetrix Electronics and suitable for high-voltage battery disconnect switches, solid-state circuit breakers, and industrial e-fuse modules requiring stable component supply across automotive, energy storage, and industrial OEM programs.

Supply support for IPDQ60R040S7AXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

The CoolMOS™ SJ S7A product line targets high-efficiency, high-reliability HV power switching in automotive battery systems and industrial protection devices - emphasizing low R_DS(on), robust avalanche capability, and AEC-Q101 compliance.

FAQ

Can IPDQ60R040S7AXTMA1 be used in linear (analog) mode?

No. The datasheet explicitly prohibits linear-mode operation due to thermal instability risks. This device is designed exclusively for switching applications with defined on/off states. Operating in the linear region may cause localized hot-spot formation and premature failure, even at low average power. Applications requiring analog control must use purpose-designed lateral or vertical DMOS devices with specified safe operating area curves.

What is the functional difference between Pin 2 (Driver Source) and Pins 3–11 (Power Source)?

Pin 2 is the Kelvin Source terminal - it carries only gate driver return current and must connect directly to the gate driver IC ground reference. Pins 3–11 are high-current power source terminals carrying the full load current. Interchanging them invalidates the low-inductance gate loop design and causes severe ringing, overshoot, and potential shoot-through during switching transitions.

Is the PG-HDSOP-22 package lead (Pb)-free and RoHS compliant?

Yes. The IPDQ60R040S7AXTMA1 package is fully Pb-free and RoHS compliant, with MSL1 moisture sensitivity rating. It supports standard lead-free reflow soldering profiles up to 260 °C peak temperature, and the exposed drain tab is compatible with both solder paste and thermal interface materials for heatsink attachment.

Does the AEC-Q101 qualification cover extended temperature operation up to 175 °C?

AEC-Q101 qualification covers the full operating range from −40 °C to 150 °C. The 175 °C rating is an extended limit for short-duration (≤50 h lifetime) overload conditions only, and is not part of the AEC-Q101 stress test scope. For sustained operation, the maximum junction temperature remains 150 °C per qualification requirements.

IPDQ60R040S7AXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 12V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 13A, 12V

Vgs(th) (Max) @ Id:: 4.5V @ 790µA

Gate Charge (Qg) (Max) @ Vgs:: 83 nC @ 12 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 272W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IPDQ60R040S7AXTMA1 FAQ

1.How can I place an order for IPDQ60R040S7AXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDQ60R040S7AXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDQ60R040S7AXTMA1 reliable?

The price and inventory of IPDQ60R040S7AXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDQ60R040S7AXTMA1 is usually 5 days.

3.What payment methods are accepted for IPDQ60R040S7AXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDQ60R040S7AXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDQ60R040S7AXTMA1?

IPDQ60R040S7AXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDQ60R040S7AXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDQ60R040S7AXTMA1?

For technical support, including IPDQ60R040S7AXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDQ60R040S7AXTMA1 requirements.

6.How does Aetrix verify that IPDQ60R040S7AXTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDQ60R040S7AXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ60R040S7AXTMA1 meets industry standards.

7.What is the process for return or replacement of IPDQ60R040S7AXTMA1?

All IPDQ60R040S7AXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ60R040S7AXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDQ60R040S7AXTMA1 part is unused and in its original packaging.

Return procedure for IPDQ60R040S7AXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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