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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDQ60R045CFD7XTMA1

Name: IPDQ60R045CFD7XTMA1
Brand: Infineon Technologies
SKU: IPDQ60R045CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDQ60R045CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IPDQ60R045CFD7XTMA1.pdf

Description:: HIGH POWER_NEW PG-HDSOP-22

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Product details

Overview

IPDQ60R045CFD7XTMA1 from Infineon Technologies is a 600 V, 45 mΩ ultra-fast body diode CoolMOS™ CFD7 power MOSFET in PG-HDSOP-22 package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 79 nC gate charge, 1300 A/µs diF/dt ruggedness, and 9.1 µJ Eoss at 400 V, enabling high-efficiency server and EV charging power supplies.

For engineers reviewing the IPDQ60R045CFD7XTMA1 datasheet, IPDQ60R045CFD7XTMA1 pinout, IPDQ60R045CFD7XTMA1 application, or IPDQ60R045CFD7XTMA1 equivalent, key selection criteria include reverse recovery charge (Qrr = 0.68–1.37 µC), hard commutation robustness, RDS(on) temperature stability up to 150 °C, and gate drive compatibility with standard 10 V logic-level controllers.

Technical Context

This MOSFET implements Infineon's superjunction-based CoolMOS™ CFD7 architecture, featuring an integrated fast-recovery body diode with 132–198 ns trr and 1300 A/µs diF/dt rating. Its low RDS(on) × Qg figure-of-merit (FOM) and reduced Eoss support zero-voltage switching (ZVS) operation while maintaining dv/dt ruggedness of 70 V/ns in diode mode and 120 V/ns in MOSFET mode.

The device uses source-sense and driver-source pins (Pins 2 and 3–11) to enable accurate current sensing and gate loop optimization in high-frequency resonant designs. The exposed drain tab (Pins 12–22 + thermal pad) provides low RthJC = 0.42 °C/W for high-power density thermal management.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage - supports 400 V bus applications with 50 % margin for transient overvoltage in telecom and EV charging systems.
R_DS(on),max	45 mΩ at T_j = 150 °C - enables low conduction loss in high-current LLC primary-side switches operating continuously at elevated junction temperatures.
Q_g,typ	79 nC - reduces gate drive power and allows use with standard 1-A peak gate drivers without external buffering in 100–500 kHz designs.
Q_rr	0.68–1.37 µC - minimizes switching loss and EMI during hard commutation events in asymmetric half-bridge and phase-shifted topologies.
E_oss	9.1 µJ at 400 V - lowers turn-off energy and improves ZVS window margin in resonant converters operating above 200 kHz.
diF/dt	1300 A/µs - ensures reliable body-diode commutation under high dI/dt conditions typical in multi-phase interleaved and high-power-density PFC stages.
R_thJC	0.42 °C/W - enables >250 W continuous power dissipation with moderate heatsinking, supporting compact 3–5 kW server PSU modules.

Pinout & Package

Package: PG-HDSOP-22 - surface-mount, thermally enhanced 22-pin package with exposed drain tab (Pins 12–22 + metal tab) for direct PCB thermal coupling and low-inductance high-current routing.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate input terminal - connects to gate driver output; requires low-inductance layout due to high di/dt sensitivity.
Pins 3–11	Power Source	Main source connection for high-current return path - used for power circuit grounding and current conduction during on-state.
Pin 2	Driver Source	Sense-source reference for gate driver feedback - must be routed separately from Power Source to avoid noise coupling into gate control loop.
Pins 12–22 + Tab	Drain	High-voltage drain node and primary thermal interface - electrically and thermally connected to PCB copper pour for efficient heat extraction.

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 132–198 ns and Qrr = 0.68–1.37 µC - enables clean commutation in LLC half-bridge legs without snubbers or auxiliary circuits.
Low R_DS(on) × Q_g FOM	45 mΩ × 79 nC = 3.555 Ω·nC - achieves best-in-class conduction/switching tradeoff for 600 V SMD MOSFETs in high-frequency SMPS.
Enhanced diF/dt ruggedness	1300 A/µs rated - sustains rapid current reversal during ZVS transitions without parasitic turn-on or latch-up in multi-kW converters.
Optimized E_oss	9.1 µJ at 400 V - reduces turn-off loss by ~35 % vs. prior CFD2 generation, widening ZVS operating range across line/load conditions.
Source-sense architecture	Dedicated Driver Source (Pin 2) and Power Source (Pins 3–11) - enables Kelvin-source gate driving for stable switching behavior under high di/dt.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3–5 kW 48 V output LLC resonant converter for AI accelerator racks.

IC Role / Device Role / Timing Role: High-side resonant switch operating at 250–350 kHz with ZVS turn-on and controlled body-diode conduction during dead-time.

Use Value: 45 mΩ R_DS(on) and 9.1 µJ E_oss reduce total losses by 12 % versus CFD2 equivalents, enabling 96.8 % peak efficiency at full load.

Use Scenario: Main switch in 3 kW -48 V telecom rectifier using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Low-loss ZVS switch with fast body diode ensuring minimal circulating current during lagging-leg commutation.

Use Value: 1300 A/µs diF/dt rating prevents false triggering during high di/dt events, eliminating need for external diode clamping.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: Primary-side switch in bidirectional CLLC converter for 11 kW AC/DC + DC/AC OBC in BEV platforms.

IC Role / Device Role / Timing Role: Symmetrically operated resonant switch supporting both charging and vehicle-to-grid (V2G) modes with identical ZVS behavior.

Use Value: Qrr consistency across temperature (0.68–1.37 µC) ensures predictable dead-time requirements and stable efficiency from -40 °C to 125 °C ambient.

Use Scenario: Output inverter switch in 10 kVA three-phase UPS with active front-end and IGBT-based output stage.

IC Role / Device Role / Timing Role: Fast-recovery freewheeling diode replacement in synchronous rectification leg, reducing conduction loss and thermal stress.

Use Value: V_SD = 0.9 V at 18 A enables 30 % lower forward loss than discrete SiC Schottky alternatives in cost-sensitive industrial UPS designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPDQ60R045CFD7ATMA1	Same die, PG-HDSOP-22-1 package variant with different tape-and-reel marking; identical electrical specs and thermal performance.	No functional difference - used interchangeably in automated SMT assembly where reel coding differs per customer requirement.	Select when matching specific Infineon internal order code or legacy BOM revision referencing ATMA1 suffix.
IPW60R045C7	TO-247-3L package; same CFD7 die but higher R_thJA (62 °C/W) and no sense-source pin - lacks Kelvin-source capability.	Suitable only for non-Kelvin gate drive designs with lower switching frequency (<200 kHz) and less stringent ZVS margin requirements.	Choose for prototyping or low-volume builds where through-hole mounting or simplified layout outweighs SMD thermal and control advantages.

Compared with IPDQ60R045CFD7XTMA1, the ATMA1 variant offers identical performance in alternate packaging, while the IPW60R045C7 trades SMD thermal efficiency and sense-source precision for mechanical robustness and legacy compatibility - making XTMA1 optimal for high-density, high-frequency production designs.

Availability

IPDQ60R045CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and long-term production continuity.

Supply support for IPDQ60R045CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in high-voltage silicon and wide-bandgap technologies.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for soft-switching resonant topologies demanding ultra-low Qrr, high diF/dt ruggedness, and stable RDS(on) across temperature - targeting next-generation power supplies in datacenter and electrified transportation.

FAQ

Can IPDQ60R045CFD7XTMA1 replace older CoolMOS™ CFD2 devices in existing designs?

Yes, it can serve as a drop-in upgrade in most cases due to identical pinout, voltage rating, and RDS(on) spec, but gate drive timing must be re-validated: its lower Qg (79 nC vs. ~105 nC in CFD2) shortens turn-on delay and may require RG adjustment to maintain safe SOA margins. Layout inductance and snubber values should also be reviewed for optimal ZVS behavior.

What is the purpose of the separate Driver Source (Pin 2) and Power Source (Pins 3–11)?

Pin 2 provides a Kelvin connection for gate driver feedback, isolating gate loop impedance from high-current source return paths. Pins 3–11 carry main source current to minimize voltage spikes during switching. Swapping them causes gate oscillation and potential device failure - Infineon explicitly warns against interchangeability in the datasheet.

Is this MOSFET suitable for hard-switched PFC applications?

No - it is not recommended for continuous hard-switched boost PFC. Its ultra-fast body diode and low Qrr are optimized for resonant commutation, not unidirectional hard switching. In hard-switched PFC, its low RDS(on) is offset by higher Eoss-related turn-off loss and insufficient dv/dt ruggedness compared to dedicated PFC MOSFETs like the IPA60R125CP.

What is the maximum recommended gate resistor value for ZVS operation in an LLC converter?

For reliable ZVS across line/load, RG should be ≤ 3.0 Ω when using a 10 V gate drive, as validated in the datasheet's dynamic test conditions (td(off) = 96 ns, tf = 4 ns). Higher values increase turn-off time and risk incomplete ZVS at light load; lower values risk gate ringing and excessive driver loss - 2.2 Ω is typical for 300 kHz designs with 1-A peak drivers.

IPDQ60R045CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IPDQ60R045CFD7XTMA1 FAQ

1.How can I place an order for IPDQ60R045CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDQ60R045CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDQ60R045CFD7XTMA1 reliable?

The price and inventory of IPDQ60R045CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDQ60R045CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPDQ60R045CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDQ60R045CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDQ60R045CFD7XTMA1?

IPDQ60R045CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDQ60R045CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDQ60R045CFD7XTMA1?

For technical support, including IPDQ60R045CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDQ60R045CFD7XTMA1 requirements.

6.How does Aetrix verify that IPDQ60R045CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDQ60R045CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ60R045CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPDQ60R045CFD7XTMA1?

All IPDQ60R045CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ60R045CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDQ60R045CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPDQ60R045CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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