Infineon Technologies IPDQ60R075CFD7XTMA1

Overview

IPDQ60R075CFD7XTMA1 from Infineon Technologies is a 600 V, 75 mΩ ultra-fast body diode CoolMOS™ CFD7 power MOSFET in PG-HDSOP-22 package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 97 A pulsed drain current, 51 nC typical gate charge, and 1300 A/µs diF/dt ruggedness, enabling high-efficiency server, telecom, and EV charging power supplies.

For engineers reviewing the IPDQ60R075CFD7XTMA1 datasheet, IPDQ60R075CFD7XTMA1 pinout, IPDQ60R075CFD7XTMA1 application, or IPDQ60R075CFD7XTMA1 equivalent, key selection criteria include reverse recovery charge (Qrr = 0.51–1.02 µC), R_DS(on) temperature stability, gate drive robustness at 30 V dynamic rating, and HDSOP-22 thermal resistance (R_thJC = 0.57 °C/W).

Technical Context

This device implements Infineon's superjunction-based CoolMOS™ CFD7 architecture with integrated fast-recovery body diode, engineered specifically for zero-voltage switching (ZVS) operation. Its low Q_g/Q_rr ratio and reduced E_oss (5.9 µJ @ 400 V) minimize switching losses in resonant half-bridge and full-bridge topologies.

The PG-HDSOP-22 package features isolated tab (Drain), dedicated Driver Source (Pin 2), and separate Source sensing (Pins 3–11), enforcing strict non-interchangeability between source and sense-source pins to preserve hard commutation ruggedness and dv/dt immunity (70 V/ns reverse diode, 120 V/ns MOSFET).

Key Specifications

Pinout & Package

Package: PG-HDSOP-22 (22-pin, exposed drain tab, surface-mount). Thermal pad (Tab) is electrically connected to Drain (Pins 12–22). Pin 1 = Gate; Pin 2 = Driver Source; Pins 3–11 = Source (sense); Pins 12–22 + Tab = Drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage fast-diode MOSFET applications.

Compared with IPW60R075CFD7 and IPP60R075CFD7, the IPDQ60R075CFD7XTMA1 offers superior thermal performance (0.57 °C/W), integrated Kelvin source routing, and optimized SMD manufacturability-making it the preferred choice for high-density, high-reliability resonant power conversion.

Availability

IPDQ60R075CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and consistent parametric performance across production lots.

Supply support for IPDQ60R075CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D infrastructure.

The CoolMOS™ CFD7 product line targets high-efficiency resonant power conversion, delivering optimized trade-offs between switching speed, body diode robustness, and ease of design-in for ZVS and LLC topologies.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current is 21 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating reflects thermal derating due to junction-to-case thermal resistance (0.57 °C/W) and safe operating area limits-not just R_DS(on) conduction loss. Operation above this current requires forced cooling or pulse-width limitation to avoid exceeding T_j = 150 °C.

Can the source and sense-source pins be interchanged in layout?

No-source (Pins 3–11) and Driver Source (Pin 2) are functionally distinct and non-interchangeable. Swapping them introduces gate loop inductance that degrades switching speed, increases EMI, and risks false turn-on during high diF/dt events. The datasheet explicitly warns that interchange may cause malfunction, especially in paralleled configurations.

How does the PG-HDSOP-22 package improve thermal performance versus TO-220?

The PG-HDSOP-22 achieves R_thJC = 0.57 °C/W versus ~0.85 °C/W for TO-220 packages due to its large exposed drain tab directly soldered to PCB copper, eliminating thermal interface resistance from mechanical mounting. This enables 35 % higher power density in SMD-based 1U server PSUs without heatsinks.

Is this MOSFET suitable for hard-switched PFC boost stages?

While optimized for soft-switching, the IPDQ60R075CFD7XTMA1 is qualified for hard-switched PFC use due to its 1300 A/µs diF/dt rating and 70 V/ns reverse diode dv/dt ruggedness. However, Q_rr-related turn-on loss remains higher than dedicated PFC MOSFETs like the IPA60R125CP, so efficiency gains are most pronounced above 100 kHz with careful gate drive tuning.