Infineon Technologies IPDQ60T040S7AXTMA1

Overview

IPDQ60T040S7AXTMA1 from Infineon is a 600 V, 40 mΩ CoolMOS™ S7TA superjunction MOSFET with integrated temperature sensor (TS), optimized for static switching and high-current low-frequency applications such as HV eFuse and on-board charger disconnect switches. It features R_DS(on) = 40 mΩ (max), Q_g = 83 nC (typ), V_SD = 0.82 V, pulsed drain current of 203 A, and AEC-Q101 qualification.

For engineers reviewing the IPDQ60T040S7AXTMA1 datasheet, IPDQ60T040S7AXTMA1 pinout, IPDQ60T040S7AXTMA1 application, or IPDQ60T040S7AXTMA1 equivalent, key selection criteria include junction temperature sensing accuracy, pulsed current capability under 150 °C T_j, gate drive robustness at ±30 V, and thermal resistance R_thJC = 0.46 °C/W for high-power PCB mounting.

Technical Context

This device implements a silicon-based superjunction MOSFET architecture with embedded forward-biased temperature-sensing diode (TS pin) monolithically integrated in the die. The TS diode provides linear voltage vs. junction temperature response (TC ≈ 5.6 mV/K) with ±0.1 V accuracy over 25–175 °C, enabling real-time thermal protection without external sensors.

It operates in hard-switched, low-duty-cycle applications where conduction losses dominate; its 0.040 Ω R_DS(on) minimizes I²R heating, while its 203 A pulsed ID rating and 156 mJ single-pulse avalanche energy support robust fault handling in DC circuit breakers and HV eDisconnect systems.

Key Specifications

Pinout & Package

IPDQ60T040S7AXTMA1 uses PG-HDSOP-22 package with exposed copper drain tab (pins 12–22 + tab) for thermal and electrical connection. Gate (pins 1–2), driver source (pin 4), power source (pins 5–11), and temperature sensor (pin 3) are electrically isolated per functional domain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage static switching applications.

Compared with IPDQ60T040S7AXTMA1, the S7ATMA1 variant trades automotive qualification for cost, while the 060S7AXTMA1 offers gate-drive efficiency at the expense of conduction loss-making the 040S7AXTMA1 optimal for thermally demanding, safety-critical HV DC switching.

Availability

IPDQ60T040S7AXTMA1 is available at Aetrix Electronics and suitable for high-voltage DC circuit breakers, automotive HV eDisconnect systems, and on-board charger input stages requiring stable component supply, AEC-Q101 compliance, and validated thermal performance up to 175 °C.

Supply support for IPDQ60T040S7AXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the CoolMOS™ S7TA product line, engineered specifically for high-reliability, low-frequency, high-current static switching in electric vehicle and industrial HV DC systems where thermal awareness and fault resilience are critical.

FAQ

Can IPDQ60T040S7AXTMA1 be used in linear mode operation?

No. The datasheet explicitly prohibits linear-mode operation due to inherent thermal instability risks in superjunction MOSFETs. It is designed exclusively for switched-mode applications with defined duty cycles and adequate heatsinking. Operating in the linear region may cause localized hot-spot formation and premature failure, even with active cooling.

What is the maximum allowable gate resistor value when driving IPDQ60T040S7AXTMA1?

The gate resistor must be selected to limit peak gate current and control switching speed without exceeding safe dv/dt limits. With typical Q_g = 83 nC and recommended V_GS swing of 0–12 V, a 10 Ω resistor yields ~1.2 A peak current and ~100 ns rise time. Values above 22 Ω increase switching losses significantly; values below 5 Ω risk overshoot and EMI without proper layout control.

How is the temperature sensor pin (Pin 3) biased and calibrated?

Pin 3 requires a constant-current source of 10–500 µA (typically 50 µA) to generate a forward voltage (V_F) linearly proportional to junction temperature. Calibration uses the specified TC of 5.588 mV/K at 50 µA, with V_F = 1.8103 V at 25 °C and 0.9721 V at 175 °C. No factory trimming is needed; system-level calibration against reference thermocouples is sufficient.

Why are Driver Source (Pin 4) and Power Source (Pins 5–11) separate terminals?

Separation prevents gate loop noise from coupling into the main current return path. Pin 4 serves as the dedicated low-impedance reference for gate driver ICs, while Pins 5–11 carry high di/dt load current. Swapping them causes gate oscillation, false triggering, and potential shoot-through in half-bridge configurations-hence the datasheet's explicit warning against interchangeability.