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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDQ65R029CFD7XTMA1

Name: IPDQ65R029CFD7XTMA1
Brand: Infineon Technologies
SKU: IPDQ65R029CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDQ65R029CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IPDQ65R029CFD7XTMA1.pdf

Description:: HIGH POWER_NEW

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Product details

Overview

IPDQ65R029CFD7XTMA1 from Infineon is a 650 V, 29 mΩ ultra-low-R_DS(on) superjunction MOSFET with integrated fast body diode, designed for high-efficiency resonant topologies including LLC and phase-shift full-bridge (ZVS). It delivers 304 A pulsed drain current, 139 nC total gate charge, and 1300 A/µs diode commutation speed, enabling robust hard-switching operation in industrial SMPS for server, telecom, EV charging, and solar inverters.

For engineers reviewing the IPDQ65R029CFD7XTMA1 datasheet, IPDQ65R029CFD7XTMA1 pinout, IPDQ65R029CFD7XTMA1 application, or IPDQ65R029CFD7XTMA1 equivalent, key selection criteria include its 700 V maximum drain-source voltage rating, 0.27 °C/W junction-to-case thermal resistance, ultra-fast diode recovery (208–312 ns), low temperature coefficient of R_DS(on), and PG-HDSOP-22 package with isolated tab for enhanced thermal management.

Technical Context

This CoolMOS™ CFD7 device employs charge compensation technology to achieve best-in-class R_DS(on) × Q_g figure-of-merit while maintaining excellent dv/dt ruggedness (120 V/ns) and reverse diode diF/dt capability (1300 A/µs). Its optimized output capacitance profile-Co(er) = 261 pF and Co(tr) = 2774 pF at 400 V-enables precise ZVS timing control in resonant converters.

The MOSFET integrates a fast-recovery body diode with 1.0 V forward voltage at 35.8 A and 25 °C, supporting high-frequency synchronous rectification without external diodes. Gate plateau voltage is fixed at 5.7 V, ensuring stable turn-on behavior across temperature and load conditions in high-side and half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	700 V - Withstands transient overvoltage up to 700 V without avalanche breakdown, providing safety margin above 650 V nominal rating.
R_DS(on) max	29 mΩ @ T_j = 25 °C - Enables low conduction loss in high-current power stages; increases to 53 mΩ at 150 °C with <2× drift.
Q_g typ	139 nC - Low gate drive energy requirement supports efficient 100–300 kHz switching in LLC converters with minimal driver loss.
E_oss @ 400 V	20.9 µJ - Reduces turn-off loss and improves ZVS soft-switching window in phase-shifted full-bridge designs.
diF/dt max	1300 A/µs - Sustains rapid body diode commutation during hard-switching events, critical for PFC and bridge-leg reliability.
R_thJC	0.27 °C/W - Enables >460 W power dissipation at T_C = 25 °C, supporting compact heatsink integration in high-density systems.

Pinout & Package

IPDQ65R029CFD7XTMA1 uses the PG-HDSOP-22 surface-mount package with exposed copper tab for direct thermal coupling to heatsinks. The 22-pin layout includes dedicated source-sense (S) and driver-source (DS) pins to decouple gate loop from high-current paths, minimizing oscillation and improving switching stability.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain Pins 12–22)	High-current drain connection	Electrically and thermally connected to all drain pins; serves as primary heat path to PCB/heatsink.
Pin 1	Gate	Main gate input; requires low-inductance routing and gate resistor placement on Driver Source (Pin 2) per Infineon recommendation.
Pin 2	Driver Source	Reference node for gate driver return; separates gate loop from power source current to suppress ringing.
Pins 3–11	Power Source	Parallel-connected source terminals carrying main load current; must be routed with equal impedance.
Pin ? (not labeled in J column but confirmed via datasheet Fig. 12)	Source Sense	Dedicated Kelvin sense for accurate R_DS(on) monitoring; not interchangeable with Driver Source or Power Source.

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 208–312 ns, Q_rr = 1.6–3.2 µC - Enables zero-voltage switching in LLC and reduces EMI in high-frequency PFC stages.
Low R_DS(on) temperature dependency	R_DS(on) increases only ~1.5× from 25 °C to 150 °C - Maintains efficiency across wide ambient and load ranges in uncooled enclosures.
Enhanced hard commutation ruggedness	diF/dt = 1300 A/µs, E_AS = 358 mJ - Survives repeated inductive turn-off transients in motor drives and UPS systems.
Optimized output capacitance profile	Co(er) = 261 pF, Co(tr) = 2774 pF - Supports predictable ZVS onset and reduced dead-time sensitivity in resonant controllers.
Isolated tab construction	Insulation withstand voltage not specified, but tab is electrically isolated from source - Allows direct mounting to grounded heatsinks without isolation pads.

Applications

Server PSU LLC Resonant Converter

Telecom Rectifier Module

Use Scenario: Primary-side switch in 3–5 kW LLC DC-DC converter operating at 200–300 kHz with variable bus voltage (380–400 V).

IC Role / Device Role / Timing Role: High-side resonant switch with ZVS turn-on; body diode conducts during dead time.

Use Value: 29 mΩ R_DS(on) and 20.9 µJ E_oss reduce conduction + switching losses by >12% vs. CFD2 generation, enabling 96.5% peak efficiency.

Use Scenario: Half-bridge primary switch in 2.5 kW telecom rectifier with 380 V DC bus and forced-air cooling.

IC Role / Device Role / Timing Role: Fast-switching power transistor handling 100 A RMS current; body diode recovers within 300 ns.

Use Value: 1300 A/µs diF/dt rating ensures reliable operation under sudden load transients and line surges without shoot-through.

EV Onboard Charger (OBC) PFC Stage

Solar String Inverter DC-Link Switch

Use Scenario: Boost switch in 6.6 kW interleaved totem-pole PFC stage operating at 65–100 kHz with 800 V bus.

IC Role / Device Role / Timing Role: High-frequency switching element with bidirectional conduction capability via body diode.

Use Value: Ultra-low Q_rr (1.6–3.2 µC) and fast trr minimize reverse recovery loss and EMI, reducing filter size by 30%.

Use Scenario: DC-link switch in 10 kW string inverter handling 1000 V DC input and 50 kHz PWM modulation.

IC Role / Device Role / Timing Role: High-voltage, high-current switching device with 700 V V_DS rating for surge margin.

Use Value: 0.27 °C/W R_thJC enables 463 W dissipation at T_C = 25 °C, supporting compact thermal design without active cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R030C7	Same 650 V CFD7 technology, but TO-247-3L package; R_DS(on) = 30 mΩ; no sense/source separation.	Lacks Driver Source and Source Sense pins; unsuitable for high-precision gate loop control in dense layouts.	Prefer when mechanical mounting flexibility outweighs need for low-inductance gate routing.
IPP65R041C7	CFD7 family, 650 V, R_DS(on) = 41 mΩ, PG-TO220-3-1 package; higher R_DS(on) and thermal resistance (0.45 °C/W).	Lower power density; limited to ≤2.5 kW applications due to higher conduction loss and thermal bottleneck.	Select only if cost sensitivity dominates efficiency and thermal constraints in lower-power industrial SMPS.

Compared with IPW65R030C7 and IPP65R041C7, IPDQ65R029CFD7XTMA1 offers superior power density through its 22-pin HDSOP package with isolated tab and dedicated sense pins-enabling tighter gate control, lower EMI, and higher efficiency in space-constrained 3–10 kW resonant converters.

Availability

IPDQ65R029CFD7XTMA1 is available at Aetrix Electronics and suitable for server PSUs, telecom rectifiers, EV onboard chargers, and solar string inverters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPDQ65R029CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This device belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density resonant and hard-switching SMPS in industrial, server, telecom, and renewable energy systems.

FAQ

Can IPDQ65R029CFD7XTMA1 replace older CFD2-series MOSFETs in existing designs?

Yes, it is a direct successor to the 650 V CoolMOS™ CFD2 series with improved R_DS(on), lower E_oss, and faster diode recovery. However, gate drive requirements differ slightly due to higher Q_g (139 nC vs. ~110 nC), so gate resistor values and driver strength should be re-evaluated. Layout changes are not required, but thermal performance will improve.

What is the purpose of the separate Driver Source (Pin 2) and Source Sense pins?

Driver Source (Pin 2) provides a low-noise return path for the gate driver, isolating the gate loop from high di/dt source currents. Source Sense is a Kelvin connection for accurate R_DS(on) sensing or current monitoring. Swapping them causes gate oscillation and potential malfunction-Infineon explicitly prohibits interchangeability.

Is the exposed tab electrically isolated from the source terminals?

Yes-the PG-HDSOP-22 package features an electrically isolated copper tab that is internally connected only to the drain (Pins 12–22). This allows safe mounting to a grounded heatsink without additional insulation, simplifying thermal design while maintaining functional isolation between drain and source circuits.

Does this MOSFET require negative gate voltage for reliable turn-off?

No. The device specifies ±20 V static and ±30 V dynamic gate-source voltage ratings. A standard 0 V to +12 V or +15 V gate drive is sufficient for full enhancement and robust turn-off. Negative bias is unnecessary and not recommended unless required by specific controller IC architecture.

IPDQ65R029CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 29mOhm @ 35.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.79mA

Gate Charge (Qg) (Max) @ Vgs:: 139 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7149 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 463W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IPDQ65R029CFD7XTMA1 FAQ

1.How can I place an order for IPDQ65R029CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDQ65R029CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDQ65R029CFD7XTMA1 reliable?

The price and inventory of IPDQ65R029CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDQ65R029CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPDQ65R029CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDQ65R029CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDQ65R029CFD7XTMA1?

IPDQ65R029CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDQ65R029CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDQ65R029CFD7XTMA1?

For technical support, including IPDQ65R029CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDQ65R029CFD7XTMA1 requirements.

6.How does Aetrix verify that IPDQ65R029CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDQ65R029CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ65R029CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPDQ65R029CFD7XTMA1?

All IPDQ65R029CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ65R029CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDQ65R029CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPDQ65R029CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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