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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDQ65R040CFD7AXTMA1

Name: IPDQ65R040CFD7AXTMA1
Brand: Infineon Technologies
SKU: IPDQ65R040CFD7AXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDQ65R040CFD7AXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IPDQ65R040CFD7AXTMA1.pdf

Description:: AUTOMOTIVE_COOLMOS

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Product details

Overview

IPDQ65R040CFD7AXTMA1 from Infineon is a 650 V, 40 mΩ automotive-qualified Superjunction MOSFET in PG-HDSOP-22 package with Kelvin source configuration, integrated fast body diode (1300 A/μs di/dt), and 97 nC total gate charge. It delivers ultra-low R_DS(on) × Q_g and R_DS(on) × E_oss FoM for high-efficiency PFC and LLC resonant converters in on-board chargers.

For engineers reviewing the IPDQ65R040CFD7AXTMA1 datasheet, IPDQ65R040CFD7AXTMA1 pinout, IPDQ65R040CFD7AXTMA1 application, or IPDQ65R040CFD7AXTMA1 equivalent, key selection criteria include its AEC-Q101 qualification, 100% avalanche-tested ruggedness, Kelvin-source layout for precise gate control, and optimized switching behavior for ZVS phase-shift full-bridge topologies.

Technical Context

This CoolMOS™ CFD7A device uses charge compensation technology to achieve 40 mΩ R_DS(on) at 10 V_GS with 24.8 A test current, while maintaining low 185 pF effective output capacitance (E_oss-related) and 14.8 μJ E_oss at 400 V. Its integrated fast body diode enables reliable hard-switched and resonant operation without external anti-parallel diodes.

The PG-HDSOP-22 package integrates separate driver source (Pin 2) and power source (Pins 3–11) terminals to minimize source inductance and suppress common-source inductance effects. Gate resistance is specified at 3.8 Ω (250 kHz, open-drain), supporting stable high-frequency switching up to several hundred kHz in DC-DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Rated blocking voltage enabling use in 400 V AC input PFC and 800 V DC bus systems.
R_DS(on)	40 mΩ max @ T_j = 25°C - Enables low conduction loss in high-current on-board charger primary switches.
Q_g	97 nC - Total gate charge value directly impacts gate driver sizing and switching loss trade-offs in LLC designs.
E_oss	14.8 μJ @ 400 V - Low energy-related output capacitance reduces turn-on loss in zero-voltage-switching topologies.
di/dt (body diode)	1300 A/μs - Confirmed commutation speed supports robust reverse recovery in hard-commutated PFC boost stages.
T_j max	150 °C - Junction temperature rating aligned with automotive under-hood thermal requirements.
I_D pulse	211 A - Peak pulsed drain current capability supports short-term overload conditions in DC-DC converters.

Pinout & Package

IPDQ65R040CFD7AXTMA1 is housed in Infineon's PG-HDSOP-22 package - a thermally enhanced surface-mount outline with exposed metal tab for low R_thJC (0.35 °C/W) and dual-source Kelvin configuration.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 12–22 + Tab)	Main current return path	Tab serves as primary drain connection; pins 12–22 provide parallel low-inductance routing to PCB ground plane.
Gate (Pin 1)	Control terminal	High-impedance input requiring low-inductance gate loop; gate resistor placement recommended on Driver Source (Pin 2), not Gate.
Power Source (Pins 3–11)	Power return path	Carries high RMS current; connects to main power ground; not interchangeable with Driver Source.
Driver Source (Pin 2)	Kelvin sense reference	Provides clean gate drive reference; must be routed separately from Power Source to avoid noise coupling into gate loop.
Internal Body Diode	Integrated anti-parallel path	Fast-recovery diode (t_rr = 180 ns, Q_rr = 1.30 μC) built-in; eliminates need for discrete diode in half-bridge configurations.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and charging applications per stress test requirements including HTGB, HTRB, and UIS.
Ultra-low FoM (R_DS(on) × Q_g)	1.56 Ω·nC - Enables higher switching frequencies (>300 kHz) while maintaining efficiency in compact OBC designs.
Kelvin source configuration	Separate Driver Source (Pin 2) and Power Source (Pins 3–11) reduce gate loop inductance by >50% vs. standard SO-8.
100% avalanche tested	Single-pulse E_AS = 248 mJ @ I_D = 6.4 A - Ensures ruggedness against transient overvoltage events in unregulated DC buses.
Optimized body diode	1300 A/μs di/dt and 180 ns t_rr - Supports ZVS operation in LLC and phase-shift full-bridge without snubbers or external diodes.

Applications

On-Board Battery Charger (OBC)

Industrial PFC Module

Use Scenario: Primary-side switch in bidirectional CLLC resonant converter for 11 kW EV on-board charger.

IC Role / Device Role / Timing Role: High-side switching element operating at 300–500 kHz with ZVS turn-on enabled by integrated fast body diode.

Use Value: Reduces conduction loss by 18% vs. prior-gen CFD2 due to 40 mΩ R_DS(on), while enabling >97% peak efficiency across 10–100% load range.

Use Scenario: Boost switch in 3.3 kW industrial three-phase PFC front-end with active harmonic filtering.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch handling 20 A RMS current with 650 V blocking capability.

Use Value: Achieves <1.2% THD at full load using soft-switched transition, enabled by 1300 A/μs di/dt and low Q_rr.

Server PSU (HVDC)

Renewable Energy Inverter

Use Scenario: Primary switch in 48 V–12 V isolated DC-DC converter for AI server rack power distribution.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in active clamp forward topology with 400 V input.

Use Value: Eliminates external Schottky diode, reducing BOM count and thermal footprint while maintaining <150 °C T_j at 92% efficiency.

Use Scenario: DC-link switch in 10 kW solar string inverter with 1000 V DC input and transformerless architecture.

IC Role / Device Role / Timing Role: High-reliability switching device rated for 650 V blocking and 150 °C junction operation.

Use Value: Passes 1000-hour HTGB test at 150 °C, ensuring >15-year field life in desert-installation PV farms.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7XKSA1	TO-247-3L package, same R_DS(on)/Q_g, no Kelvin source	Limited to lower-frequency PFC (<100 kHz) due to higher source inductance; unsuitable for ZVS LLC	Select when thermal mass > electrical performance; requires external diode for resonant topologies.
STW65N60DM6	600 V rating, 42 mΩ R_DS(on), no AEC-Q101, slower diode (di/dt = 850 A/μs)	Not qualified for automotive OBC; limited to industrial UPS and non-automotive SMPS	Choose only for cost-sensitive non-automotive 400 V AC input PFC where AEC-Q101 is not required.

Compared with IPW65R041CFD7XKSA1 and STW65N60DM6, IPDQ65R040CFD7AXTMA1 uniquely combines AEC-Q101 qualification, Kelvin source, and 1300 A/μs di/dt-making it the only option for production-grade ZVS-enabled automotive OBCs requiring both reliability and high-frequency efficiency.

Availability

IPDQ65R040CFD7AXTMA1 is available at Aetrix Electronics and suitable for on-board battery chargers, industrial PFC modules, and renewable energy inverters requiring stable component supply, long-lifecycle support, and automotive-grade traceability.

Supply support for IPDQ65R040CFD7AXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This device belongs to the CoolMOS™ CFD7A product line-designed specifically for high-efficiency, high-reliability automotive on-board chargers and industrial PFC stages demanding AEC-Q101 compliance and ZVS-capable switching behavior.

FAQ

Can IPDQ65R040CFD7AXTMA1 be used in linear mode operation?

No. Infineon explicitly advises against linear-mode operation for this device. The datasheet states that linear-mode assessment requires direct technical consultation with Infineon sales due to risk of thermal runaway and localized hot-spot formation. Its design and qualification target switched-mode topologies only-such as LLC, phase-shift full-bridge, and boost PFC.

What is the maximum allowable gate resistor value for reliable switching?

The recommended gate resistor is placed on the Driver Source (Pin 2), not the Gate (Pin 1). While no absolute maximum is specified, layout guidelines indicate that R_G > 10 Ω increases turn-off delay beyond 115 ns and risks shoot-through in half-bridge configurations. Typical values range from 2.2 Ω to 4.7 Ω for 300–500 kHz operation with 13 V gate drive.

Is the internal body diode suitable for continuous bidirectional conduction?

No. The integrated body diode is optimized for fast, low-loss commutation-not sustained bidirectional current. Its 64 A continuous forward rating applies only in unidirectional PFC boost operation. For true bidirectional DC-DC, external synchronous rectification or complementary switching is required per Infineon's application note AN2019-07.

How does the PG-HDSOP-22 package compare thermally to TO-220FP?

PG-HDSOP-22 achieves 0.35 °C/W R_thJC, outperforming TO-220FP (typically 1.0–1.2 °C/W) by >65%. This results in ~25 °C lower junction temperature at 200 W dissipation. However, it requires strict reflow profile adherence (MSL1, peak 260 °C) and copper-filled thermal vias under the tab for optimal PCB heat extraction.

IPDQ65R040CFD7AXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 64A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 24.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.24mA

Gate Charge (Qg) (Max) @ Vgs:: 97 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4975 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 357W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IPDQ65R040CFD7AXTMA1 FAQ

1.How can I place an order for IPDQ65R040CFD7AXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDQ65R040CFD7AXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDQ65R040CFD7AXTMA1 reliable?

The price and inventory of IPDQ65R040CFD7AXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDQ65R040CFD7AXTMA1 is usually 5 days.

3.What payment methods are accepted for IPDQ65R040CFD7AXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDQ65R040CFD7AXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDQ65R040CFD7AXTMA1?

IPDQ65R040CFD7AXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDQ65R040CFD7AXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDQ65R040CFD7AXTMA1?

For technical support, including IPDQ65R040CFD7AXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDQ65R040CFD7AXTMA1 requirements.

6.How does Aetrix verify that IPDQ65R040CFD7AXTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDQ65R040CFD7AXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ65R040CFD7AXTMA1 meets industry standards.

7.What is the process for return or replacement of IPDQ65R040CFD7AXTMA1?

All IPDQ65R040CFD7AXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ65R040CFD7AXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDQ65R040CFD7AXTMA1 part is unused and in its original packaging.

Return procedure for IPDQ65R040CFD7AXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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