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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDQ65R040CFD7XTMA1

Name: IPDQ65R040CFD7XTMA1
Brand: Infineon Technologies
SKU: IPDQ65R040CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDQ65R040CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IPDQ65R040CFD7XTMA1.pdf

Description:: HIGH POWER_NEW

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPDQ65R040CFD7XTMA1 from Infineon is a 650 V, 40 mΩ ultra-fast body diode Superjunction MOSFET in PG-HDSOP-22 package with integrated Kelvin source (Driver Source Pin 2), optimized for zero-voltage switching (ZVS) topologies. It delivers 211 A pulsed drain current, 97 nC total gate charge, and 1300 A/µs diode commutation speed - enabling high-efficiency LLC and phase-shift full-bridge converters in server power supplies and EV charging stations.

For engineers reviewing the IPDQ65R040CFD7XTMA1 datasheet, IPDQ65R040CFD7XTMA1 pinout, IPDQ65R040CFD7XTMA1 application, or IPDQ65R040CFD7XTMA1 equivalent, key selection criteria include its 650 V breakdown voltage, low R_DS(on) temperature coefficient, fast body diode recovery (t_rr = 180–270 ns), hard commutation ruggedness, and dedicated Driver Source pin for paralleling stability.

Technical Context

This CoolMOS™ CFD7 device uses charge-compensation superjunction architecture with an integrated fast-recovery body diode and separate Driver Source (Pin 2) and Power Source (Pins 3–11) terminals. Its 0.040 Ω max R_DS(on) at T_j = 150°C and 14.8 µJ E_oss at 400 V enable minimal switching loss in resonant converters operating above 100 kHz.

The MOSFET features 700 V absolute maximum drain-source voltage rating, 120 V/ns dv/dt ruggedness, and 1300 A/µs diF/dt capability - confirming robustness under hard commutation and bus overvoltage transients. Thermal resistance R_thJC is 0.35 °C/W, supporting high-power-density thermal design when mounted on PCBs with exposed tab cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V nominal DC bus with 75% margin for transient overvoltage in telecom/server SMPS
R_DS(on) max	40 mΩ @ T_j = 150°C - enables <1.5 W conduction loss at 64 A continuous current with stable thermal derating
Q_g typ	97 nC - determines gate drive power requirement (~1.2 W at 100 kHz, 13 V swing) and switching speed control
E_oss @ 400 V	14.8 µJ - directly reduces turn-on energy loss in ZVS operation, critical for >96% efficiency targets
diF/dt max	1300 A/µs - ensures reliable body diode commutation in phase-shifted full-bridge without oscillation or failure
t_rr	180–270 ns - limits reverse recovery charge (Q_rr = 1.3–2.6 µC) to reduce shoot-through risk and EMI in high-frequency resonant designs
R_thJC	0.35 °C/W - allows junction-to-case temperature rise of ≤35°C at 100 W dissipation, enabling compact heatsink integration

Pinout & Package

Package: PG-HDSOP-22 - thermally enhanced surface-mount package with exposed copper tab (Drain-connected) for direct PCB heat sinking. Dimensions: 10.0 mm × 15.0 mm × 2.3 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
Tab & Pins 12–22	Drain	High-current main drain path; tab is electrically connected to all drain pins and serves as primary thermal interface
Pin 1	Gate	Control input; requires low-inductance gate loop routing due to fast switching (t_f = 3 ns)
Pins 3–11	Power Source	Main source return path for load current; must be routed with low impedance to minimize voltage drop during high di/dt
Pin 2	Driver Source	Kelvin sense source for gate driver feedback; isolates gate loop from power loop to suppress noise-induced false turn-on

Key Features

Feature	Design Value
Ultra-fast body diode	1300 A/µs diF/dt and 180–270 ns t_rr enable reliable ZVS in phase-shift full-bridge without external snubbers
Dedicated Driver Source pin	Pin 2 provides isolated gate drive reference, eliminating source inductance effects and improving switching consistency in paralleled configurations
Low R_DS(on) temperature coefficient	R_DS(on) increases only ~1.8× from 25°C to 150°C - maintains predictable conduction loss and thermal stability across industrial temperature range
Enhanced dv/dt ruggedness	120 V/ns rated dv/dt withstand prevents spurious turn-on during high-slew-rate switching transitions in high-density layouts
JEDEC-qualified industrial reliability	Qualified per JESD47 and JESD22-A108 for 150°C continuous operation - validated for 10+ year lifetime in server PSU and EV charger applications

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW LLC resonant converter powering AI accelerator racks.

IC Role / Device Role / Timing Role: High-voltage switching element operating at 300–500 kHz with ZVS, leveraging ultra-low E_oss and fast body diode for soft switching.

Use Value: Enables >96.5% peak efficiency and 50 W/in³ power density by minimizing turn-on loss and eliminating external body diode requirements.

Use Scenario: Active clamp forward or phase-shift full-bridge stage in 48 V telecom rectifier with 380 V DC bus.

IC Role / Device Role / Timing Role: Main switching transistor handling 64 A continuous current and 211 A pulse, synchronized to ZVS timing window.

Use Value: Delivers 15% lower conduction loss vs. CFD2 generation and eliminates diode-related EMI spikes during hard commutation.

EV Onboard Charger

Solar Inverter Auxiliary Stage

Use Scenario: Secondary-side synchronous rectification or primary-side switch in bi-directional OBC AC/DC stage.

IC Role / Device Role / Timing Role: Fast-switching MOSFET with Kelvin source for precise gate control during dynamic load transitions and regenerative braking events.

Use Value: Supports 11 kW bidirectional operation with <1.2% efficiency penalty at light load due to low Q_g and ultra-low R_DS(on).

Use Scenario: High-side switch in auxiliary DC/DC converter supplying gate drivers and controllers in string inverters.

IC Role / Device Role / Timing Role: 650 V-rated power switch managing 24 V output at up to 10 A, operating continuously at 125°C ambient.

Use Value: Ensures >10-year field reliability under solar farm thermal cycling thanks to JEDEC industrial qualification and 0.35 °C/W R_thJC.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPDQ65R045CFD7	45 mΩ R_DS(on) max, identical package and pinout, 10% higher conduction loss but same Q_g and diF/dt	Preferred where cost sensitivity outweighs 0.3% efficiency loss at full load; suitable for lower-power (<2 kW) telecom units	Select when BOM cost reduction is prioritized over peak efficiency and thermal margin is sufficient
IPW65R041C7	TO-247-3L package, no Kelvin source, 41 mΩ R_DS(on), higher R_thJC (0.45 °C/W), same CFD7 die	Used in legacy designs requiring through-hole mounting or where PCB space permits larger footprint and discrete Kelvin routing	Choose only if mechanical constraints prohibit surface-mount HDSOP-22 or if existing thermal interface favors TO-247 heatsink attachment

Compared with IPDQ65R045CFD7 and IPW65R041C7, the IPDQ65R040CFD7XTMA1 uniquely combines lowest R_DS(on), Kelvin source integration, and HDSOP-22 thermal performance - making it optimal for next-gen high-density ZVS converters where layout compactness and efficiency co-design are critical.

Availability

IPDQ65R040CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable industrial-grade sourcing.

Supply support for IPDQ65R040CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and CoolMOS™ superjunction technologies.

This device belongs to the CoolMOS™ CFD7 family - engineered specifically for high-efficiency, high-power-density resonant converters in industrial and infrastructure applications, emphasizing ZVS compatibility, hard commutation robustness, and thermal scalability.

FAQ

Can IPDQ65R040CFD7XTMA1 be paralleled with identical units?

Yes, but gate resistors must be placed on the Driver Source (Pin 2), not the Gate (Pin 1), to ensure balanced dynamic current sharing. The separate Power Source (Pins 3–11) and Driver Source (Pin 2) terminals prevent gate loop coupling and suppress oscillation during paralleling. Layout symmetry and matched trace inductance are mandatory for stable operation.

What is the purpose of the Driver Source pin (Pin 2)?

Pin 2 is a Kelvin connection to the source region, providing a clean reference for the gate driver that excludes voltage drop from high di/dt power current flowing through Pins 3–11. This eliminates false turn-on caused by source inductance and improves switching timing accuracy - especially critical in ZVS topologies with tight dead-time margins.

Is the body diode suitable for freewheeling in non-resonant topologies?

No - while the body diode has fast recovery (t_rr = 180–270 ns) and high diF/dt (1300 A/µs), it is optimized for ZVS commutation, not hard-switched freewheeling. In non-resonant applications like hard-switched PFC or buck converters, external Schottky diodes or synchronous rectification are required to avoid excessive reverse recovery loss and voltage overshoot.

How does R_DS(on) vary with temperature, and why does it matter?

R_DS(on) increases from 34 mΩ at 25°C to 40 mΩ at 150°C - a 1.18× rise, significantly flatter than earlier CFD2 devices (~1.4×). This low temperature coefficient ensures predictable conduction loss across the full industrial operating range, simplifying thermal design and enabling tighter safety margins in high-ambient environments like base station cabinets or EV powertrain enclosures.

IPDQ65R040CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 64A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 24.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.24mA

Gate Charge (Qg) (Max) @ Vgs:: 97 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4975 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 357W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IPDQ65R040CFD7XTMA1 FAQ

1.How can I place an order for IPDQ65R040CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDQ65R040CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDQ65R040CFD7XTMA1 reliable?

The price and inventory of IPDQ65R040CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDQ65R040CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPDQ65R040CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDQ65R040CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDQ65R040CFD7XTMA1?

IPDQ65R040CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDQ65R040CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDQ65R040CFD7XTMA1?

For technical support, including IPDQ65R040CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDQ65R040CFD7XTMA1 requirements.

6.How does Aetrix verify that IPDQ65R040CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDQ65R040CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ65R040CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPDQ65R040CFD7XTMA1?

All IPDQ65R040CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ65R040CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDQ65R040CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPDQ65R040CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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