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Infineon Technologies IPDQ65R060CFD7AXTMA1

Part No.:
IPDQ65R060CFD7AXTMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
22-PowerBSOP Module
Datasheet:
AetrixIPDQ65R060CFD7AXTMA1.pdf
Description:
AUTOMOTIVE_COOLMOS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:390

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Product details

Overview

IPDQ65R060CFD7AXTMA1 from Infineon is a 650 V, 60 mΩ automotive-qualified CoolMOS™ CFD7A superjunction MOSFET in PG-HDSOP-22 package with Kelvin source configuration, integrated fast body diode (di/dt = 1300 A/μs), and 139 A pulsed drain current - designed for high-efficiency ZVS phase-shift full-bridge and LLC resonant DC-DC converters in on-board chargers.

For engineers reviewing the IPDQ65R060CFD7AXTMA1 datasheet, IPDQ65R060CFD7AXTMA1 pinout, IPDQ65R060CFD7AXTMA1 application, or IPDQ65R060CFD7AXTMA1 equivalent, key selection criteria include RDS(on) = 60 mΩ max at 10 VGS, Qg = 65 nC, Eoss = 125 pF (energy-related), avalanche-tested robustness, and AEC-Q101 qualification for automotive power conversion stages.

Technical Context

This MOSFET implements Infineon's 7th-generation CoolMOS™ CFD technology with an integrated fast-recovery body diode (trr = 141 ns, Qrr = 0.86 μC) and Kelvin source sensing (separate Source and Driver Source pins), enabling precise gate control and reduced commutation losses in hard- and soft-switching topologies.

Its PG-HDSOP-22 package features 12–22 drain pins + tab, pin 1 gate, pins 3–11 power source, and pin 2 driver source - supporting low-inductance layout for high dv/dt ruggedness (120 V/ns) and parallel operation with external gate resistor placement on Driver Source.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 650 V - supports 400 V bus designs with >50% voltage margin for transient overvoltage handling in automotive DC-DC stages
RDS(on) 60 mΩ max at VGS = 10 V, ID = 16.4 A, Tj = 25°C - enables low conduction loss in high-current PFC and LLC primary switches
Qg 65 nC - balances switching speed and gate drive loss for 100–500 kHz resonant operation
Eoss 125 pF (energy-related) - reduces capacitive turn-on loss in zero-voltage switching circuits
trr 141 ns - minimizes reverse recovery energy and diode oscillation in synchronous rectification and bidirectional topologies
di/dt 1300 A/μs - ensures stable body diode commutation without snap-off in high-frequency resonant converters
Tj(max) 150°C - supports continuous operation in thermally constrained on-board charger modules

Pinout & Package

Package: PG-HDSOP-22 (22-pin exposed-drain surface-mount package with integrated thermal tab).

Pin/Terminal Circuit Role Design Meaning
12–22, Tab Drain Main high-side power path and primary thermal interface; multiple pins reduce current density and improve thermal spreading
1 Gate Control input for channel modulation; requires low-inductance routing to minimize ringing during fast switching
3–11 Power Source Return path for main load current; connects to system ground plane with minimal impedance
2 Driver Source Kelvin sense return for gate driver feedback; decouples gate loop from power loop to suppress common-source inductance effects

Key Features

Feature Design Value
Integrated fast body diode 1300 A/μs di/dt capability and 141 ns trr enable reliable ZVS operation without external diode snubbing in LLC converters
Kelvin source configuration Separate Driver Source (pin 2) and Power Source (pins 3–11) eliminate gate loop inductance impact on switching timing and stability
AEC-Q101 qualified Validated for automotive powertrain and charging systems per stress test requirements including HTGB, HTRB, and UIS
Ultra-low FOM (RDS(on) × Qg) 3.9 mΩ·nC - optimizes trade-off between conduction and switching loss for 300–700 kHz operation in OBC primary side
100% avalanche tested Single-pulse EAS = 164 mJ at ID = 5.1 A - ensures robustness against inductive switching transients in unregulated bus conditions

Applications

On-Board Charger (OBC) Primary Switch LLC Resonant DC-DC Converter

Use Scenario: High-power bi-directional AC/DC and DC/DC conversion in EV battery charging systems operating at 300–700 kHz.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in half-bridge or full-bridge LLC topology, synchronized to resonant tank frequency.

Use Value: Low Qg and Eoss reduce gate drive and capacitive losses; Kelvin source improves light-load efficiency by stabilizing VGS during partial conduction.

Use Scenario: Isolated 400 V–800 V DC-DC stage converting battery voltage to 12 V/48 V auxiliary supply in electric vehicles.

IC Role / Device Role / Timing Role: High-side switching element in phase-shifted full-bridge configuration with ZVS turn-on enabled by integrated fast body diode.

Use Value: 1300 A/μs di/dt rating prevents diode snap recovery; AEC-Q101 qualification ensures reliability across automotive temperature and vibration profiles.

PFC Boost Stage Bidirectional DC-DC for Vehicle-to-Grid (V2G)

Use Scenario: Continuous-conduction-mode (CCM) boost PFC front-end in 11 kW OBCs operating at 65–100 kHz.

IC Role / Device Role / Timing Role: Main switching device controlling inductor current and shaping input current waveform to meet IEC 61000-3-2 Class A limits.

Use Value: 650 V rating accommodates 400 V nominal bus with surge margin; low RDS(on) minimizes conduction loss at full load.

Use Scenario: Grid-tied bidirectional DC-DC converter enabling energy export from EV battery to home/grid during peak demand.

IC Role / Device Role / Timing Role: Symmetrical high-voltage switch in dual-active-bridge (DAB) topology requiring reverse conduction capability and soft switching.

Use Value: Integrated body diode with controlled trr and Qrr eliminates need for discrete anti-parallel diodes; AEC-Q101 ensures long-term field reliability under cyclic stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPDQ65R045CFD7A RDS(on) = 45 mΩ (lower), Qg = 82 nC (higher), same package and AEC-Q101 grade Better conduction loss but higher gate drive loss; less suitable for >400 kHz operation due to increased Qg Select when thermal budget favors lower RDS(on) and switching frequency is ≤300 kHz
IPW65R060CFD7XKSA1 TO-247-4L package, identical RDS(on)/Qg/di/dt specs, no Kelvin source pin separation Larger footprint and higher parasitic inductance; lacks dedicated Driver Source pin for precision gate control Prefer for prototyping or legacy layouts where SMD constraints are not binding; avoid in space-constrained OBC modules

Compared with IPDQ65R045CFD7A and IPW65R060CFD7XKSA1, IPDQ65R060CFD7AXTMA1 uniquely combines SMD manufacturability, Kelvin source fidelity, and optimized FOM for high-frequency automotive DC-DC - making it the preferred choice for production-grade on-board chargers requiring both miniaturization and switching precision.

Availability

IPDQ65R060CFD7AXTMA1 is available at Aetrix Electronics and suitable for on-board chargers, LLC resonant converters, automotive PFC stages, and bidirectional DC-DC systems requiring stable component supply with AEC-Q101 compliance and long-term automotive lifecycle support.

Supply support for IPDQ65R060CFD7AXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolMOS™ CFD7A product line - engineered specifically for automotive high-voltage power conversion, emphasizing fast body diode performance, Kelvin source accuracy, and AEC-Q101 reliability in next-generation electric vehicle charging systems.

FAQ

What is the maximum continuous drain current rating for IPDQ65R060CFD7AXTMA1?

The maximum continuous drain current is 45 A at TC = 25°C and 29 A at TC = 100°C, as specified in the absolute maximum ratings table. This rating assumes proper PCB copper area and thermal vias for junction-to-case heat transfer via the exposed drain tab in the PG-HDSOP-22 package.

Can IPDQ65R060CFD7AXTMA1 be used in linear mode operation?

No - Infineon explicitly advises against linear mode operation for this device. The datasheet states that linear mode assessment requires direct technical consultation with Infineon sales, as uncontrolled thermal runaway and localized hot-spot formation may occur outside the SOA boundaries defined for switching applications.

How does the Kelvin source configuration improve switching performance?

The separate Driver Source (pin 2) and Power Source (pins 3–11) eliminate common-source inductance from the gate drive loop, preventing VGS undershoot during turn-on and oscillation during turn-off - critical for stable ZVS operation and accurate dead-time control in high-frequency bridge topologies.

Is the body diode in IPDQ65R060CFD7AXTMA1 suitable for synchronous rectification?

Yes - its body diode is specifically optimized for fast, soft recovery (trr = 141 ns, Qrr = 0.86 μC, di/dt = 1300 A/μs), enabling use in synchronous rectifier roles within LLC secondaries or bidirectional DAB phases without external diode supplementation.

IPDQ65R060CFD7AXTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
22-PowerBSOP Module
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
60mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 820µA
Gate Charge (Qg) (Max) @ Vgs:
65 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3288 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
272W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-HDSOP-22-1

IPDQ65R060CFD7AXTMA1 FAQ

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Please submit a Request for Quotation (RFQ) for IPDQ65R060CFD7AXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IPDQ65R060CFD7AXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDQ65R060CFD7AXTMA1 is usually 5 days.

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5.How can I obtain technical support or documentation for IPDQ65R060CFD7AXTMA1?

For technical support, including IPDQ65R060CFD7AXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDQ65R060CFD7AXTMA1 requirements.

6.How does Aetrix verify that IPDQ65R060CFD7AXTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDQ65R060CFD7AXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ65R060CFD7AXTMA1 meets industry standards.

7.What is the process for return or replacement of IPDQ65R060CFD7AXTMA1?

All IPDQ65R060CFD7AXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ65R060CFD7AXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDQ65R060CFD7AXTMA1 part is unused and in its original packaging.

Return procedure for IPDQ65R060CFD7AXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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