Infineon Technologies IPDQ65R060CFD7XTMA1

Overview

IPDQ65R060CFD7XTMA1 from Infineon is a 650 V, 60 mΩ ultra-fast body diode Superjunction MOSFET in PG-HDSOP-22 package with integrated sense-source pin, optimized for zero-voltage switching (ZVS) topologies including LLC and phase-shift full-bridge converters in server, telecom, EV charging, and solar power supplies.

For engineers reviewing the IPDQ65R060CFD7XTMA1 datasheet, IPDQ65R060CFD7XTMA1 pinout, IPDQ65R060CFD7XTMA1 application, or IPDQ65R060CFD7XTMA1 equivalent, key selection criteria include R_DS(on) temperature stability, di_F/dt rating of 1300 A/µs, E_oss of 10.0 µJ at 400 V, Q_g of 65 nC, and validated hard commutation ruggedness per JEDEC industrial qualification.

Technical Context

This CoolMOS™ CFD7 device implements a charge-compensated superjunction structure with optimized cell pitch and trench depth to reduce both conduction and switching losses. Its internal fast-recovery body diode achieves t_rr = 141–212 ns and Q_rr = 0.86–1.72 µC under 400 V, 16.4 A conditions, enabling reliable ZVS operation without external diode snubbing.

The PG-HDSOP-22 package integrates separate source (pins 3–11), driver source (pin 2), gate (pin 1), and drain (pins 12–22 + tab) terminals to minimize source inductance and support precise gate drive control. The sense-source pin enables accurate current sensing while maintaining low-inductance power return paths.

Key Specifications

Pinout & Package

Package: PG-HDSOP-22 - Thermally enhanced surface-mount package with exposed drain tab (pins 12–22 + metal tab) for low thermal resistance (R_thJC = 0.46 °C/W) and high-current handling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPDQ65R060CFD7XTMA1, IPW65R041CFD7 delivers lower conduction loss at the expense of higher switching loss and gate drive complexity, while IPDQ65R080CFD7 reduces gate energy and EMI risk but increases I²R heating at high currents-making the 60 mΩ variant optimal for balanced ZVS performance in 15–25 A RMS applications.

Availability

IPDQ65R060CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and consistent parametric performance across production lots.

Supply support for IPDQ65R060CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ CFD7 family-designed specifically for high-efficiency, high-power-density resonant converters where fast body diode performance, low E_oss, and rugged hard-commutation behavior are critical.

FAQ

Can IPDQ65R060CFD7XTMA1 replace older CFD2-series MOSFETs in existing designs?

Yes, it is a direct successor to the 650 V CoolMOS™ CFD2 series with identical pinout, voltage rating, and package. Key improvements include 15% lower E_oss, 20% faster di_F/dt, and improved R_DS(on) temperature stability-requiring no layout changes but enabling higher efficiency and reliability in ZVS topologies.

Why does this MOSFET have separate source and driver source pins?

The dedicated driver source (pin 2) provides a low-inductance reference for the gate driver IC, decoupling gate-loop dynamics from high-di/dt power source current (pins 3–11). This prevents gate voltage distortion during fast switching and ensures consistent turn-on/turn-off timing in high-frequency resonant converters.

What is the maximum recommended gate resistor value for ZVS operation?

For reliable ZVS in LLC converters, Infineon recommends R_G ≤ 5.3 Ω (as used in datasheet test conditions). Higher values increase turn-on delay and reduce di_F/dt margin, risking hard switching at light loads; lower values (<3.3 Ω) improve switching speed but require careful layout to avoid gate ringing.

Is the drain tab electrically isolated from other pins?

No-the drain tab (exposed metal pad) is internally connected to pins 12–22 and forms the primary drain terminal. It must be soldered to a dedicated high-voltage copper pour on the PCB and cannot be used as a thermal pad without electrical isolation measures such as insulating thermal interface material or isolation slots.