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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDQ65R080CFD7AXTMA1

Name: IPDQ65R080CFD7AXTMA1
Brand: Infineon Technologies
SKU: IPDQ65R080CFD7AXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDQ65R080CFD7AXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IPDQ65R080CFD7AXTMA1.pdf

Description:: AUTOMOTIVE_COOLMOS

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Product details

Overview

IPDQ65R080CFD7AXTMA1 from Infineon is a 650 V, 80 mΩ automotive-qualified Superjunction MOSFET in PG-HDSOP-22 package with Kelvin source configuration, integrated fast body diode (1300 A/μs di/dt), and 50 nC total gate charge. It delivers ultra-low R_DS(on) × Q_g and R_DS(on) × E_oss FoM for high-efficiency PFC and ZVS LLC resonant converters in on-board chargers.

For engineers reviewing the IPDQ65R080CFD7AXTMA1 datasheet, IPDQ65R080CFD7AXTMA1 pinout, IPDQ65R080CFD7AXTMA1 application, or IPDQ65R080CFD7AXTMA1 equivalent, key selection criteria include its AEC-Q101 qualification, 107 A pulsed drain current, 7.8 μJ E_oss at 400 V, Kelvin source layout for precise gate control, and 1300 A/μs body diode commutation speed - all critical for automotive DC-DC and bidirectional converter design.

Technical Context

This CoolMOS™ CFD7A device uses silicon superjunction technology with charge compensation to achieve 650 V blocking capability and 80 mΩ R_DS(on) at 10 V_GS, while integrating an optimized fast-recovery body diode (t_rr = 132 ns, Q_rr = 0.73 μC) for hard- and soft-switching topologies.

Its Kelvin source configuration separates driver and power source paths, enabling stable gate drive under high di/dt conditions and reducing common-source inductance effects. The PG-HDSOP-22 package provides low 0.56 °C/W R_thJC and supports reflow soldering up to 260 °C (MSL1).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Enables use in 400 V AC-input PFC and 800 V DC-link systems without derating.
R_DS(on)	80 mΩ max @ T_j = 25°C - Delivers low conduction loss in high-current DC-DC stages.
Q_g	50 nC - Supports efficient 100–300 kHz switching in LLC resonant converters.
E_oss	7.8 μJ @ 400 V - Reduces turn-off energy loss and enables zero-voltage switching.
di/dt (body diode)	1300 A/μs - Ensures robust commutation in phase-shift full-bridge and synchronous rectification.
I_D,pulse	107 A - Sustains peak currents during transient load steps in OBC bidirectional operation.
T_j,max	150 °C - Allows operation in under-hood automotive environments with thermal margin.

Pinout & Package

IPDQ65R080CFD7AXTMA1 is housed in PG-HDSOP-22, a thermally enhanced surface-mount package with exposed drain tab and dual-source configuration (Driver Source and Power Source pins). The 22-pin layout includes dedicated Kelvin source terminals to minimize gate loop inductance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 12–22 + Tab)	High-side power return path	Low-inductance parallel drain connection improves current sharing and thermal spreading.
Gate (Pin 1)	Control input	Receives gate drive signal; requires external gate resistor placed at Driver Source (not Gate) for paralleling.
Power Source (Pins 3–11)	Main current return path	Carries full load current; connects to power ground plane with minimal trace inductance.
Driver Source (Pin 2)	Kelvin reference for gate drive	Provides noise-immune gate return path; must not be swapped with Power Source to avoid instability.
Internal Body Diode	Integrated anti-parallel diode	Enables bidirectional conduction without external diode; rated for 1300 A/μs commutation.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and charging applications per stress test requirements.
Ultra-low R_DS(on) × Q_g FoM	Enables >98% efficiency in 11 kW OBC PFC stage at 100 kHz switching frequency.
Kelvin source configuration	Eliminates source inductance impact on gate drive, ensuring stable turn-on/turn-off timing.
100% avalanche tested	Guarantees ruggedness against voltage transients in unregulated bus conditions.
Fast body diode (t_rr = 132 ns)	Reduces reverse recovery loss and EMI in ZVS phase-shifted full-bridge topologies.

Applications

On-Board Charger (OBC) PFC Stage

LLC Resonant DC-DC Converter

Use Scenario: Unidirectional AC/DC conversion in 11 kW EV on-board chargers with universal input (90–265 VAC).

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost PFC with 100–150 kHz switching.

Use Value: 80 mΩ R_DS(on) and 7.8 μJ E_oss reduce conduction and switching losses, enabling >99% PFC efficiency at full load.

Use Scenario: Primary-side switching in isolated 3.3 kW bidirectional LLC DC-DC for vehicle-to-grid (V2G) systems.

IC Role / Device Role / Timing Role: Resonant half-bridge switch operating in zero-voltage switching region with 200–300 kHz frequency sweep.

Use Value: Integrated fast body diode (1300 A/μs di/dt) ensures clean dead-time commutation and eliminates external anti-parallel diodes.

ZVS Phase-Shift Full-Bridge

Industrial 3-Phase PFC Rectifier

Use Scenario: High-power DC supply for traction inverters using 650 V bus with soft-switching requirements.

IC Role / Device Role / Timing Role: Lagging-leg switch in phase-shifted full-bridge topology with controlled ZVS turn-on.

Use Value: Low Q_rr (0.73 μC) and fast t_rr (132 ns) minimize circulating current loss and improve light-load efficiency.

Use Scenario: Active front-end rectifier in industrial UPS or motor drives requiring harmonic compliance (IEC 61000-3-2 Class A).

IC Role / Device Role / Timing Role: Switch in three-level NPC or T-type PFC with 16 kHz PWM and high dv/dt immunity.

Use Value: 120 V/ns dv/dt ruggedness prevents false turn-on during high-speed switching in multi-level configurations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R080CFD7XKSA1	TO-247-4L package; identical R_DS(on), Q_g, and CFD7A die; no HDSOP thermal enhancement	Preferred for prototyping and lower-volume industrial designs where PCB space is less constrained	Select when higher single-device power dissipation (>300 W) is needed and forced-air cooling is available.
IPP65R080CFD7XKSA1	PG-TO220-3-1 package; same die but 3-pin layout; no Kelvin source; R_DS(on) derated to 90 mΩ at 100°C	Suitable for cost-sensitive non-automotive PFC where AEC-Q101 and di/dt performance are not required	Choose only for non-automotive, non-resonant applications with <100 kHz switching and ambient <85°C.

Compared with IPW65R080CFD7XKSA1 and IPP65R080CFD7XKSA1, IPDQ65R080CFD7AXTMA1 offers superior thermal resistance (0.56 °C/W vs. >1.0 °C/W), Kelvin source stability for high-di/dt operation, and AEC-Q101 validation - making it the sole choice for production automotive OBC and V2G systems.

Availability

IPDQ65R080CFD7AXTMA1 is available at Aetrix Electronics and suitable for on-board chargers, LLC resonant DC-DC converters, and ZVS phase-shift full-bridge power supplies requiring stable component supply, automotive-grade reliability, and high-volume manufacturability.

Supply support for IPDQ65R080CFD7AXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

The CoolMOS™ CFD7A product line was designed specifically for high-efficiency, high-reliability automotive power conversion - targeting on-board chargers, traction inverters, and bidirectional DC-DC systems demanding AEC-Q101 qualification and advanced soft-switching capability.

FAQ

What is the maximum allowable gate resistor value when paralleling multiple IPDQ65R080CFD7AXTMA1 devices?

The gate resistor should be placed on the Driver Source (Pin 2), not the Gate (Pin 1), to maintain consistent turn-on timing across paralleled units. For 2–4 devices, a 3.3 Ω to 5.6 Ω resistor is recommended based on layout parasitics and 13 V gate drive; values exceeding 10 Ω risk uneven current sharing due to gate oscillation.

Does IPDQ65R080CFD7AXTMA1 support operation in linear (ohmic) mode?

No - Infineon explicitly advises against linear-mode operation. The device is characterized and qualified only for switching applications. Linear operation risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient Safe Operating Area (SOA) margin at intermediate V_DS/I_D points.

How does the Kelvin source configuration affect PCB layout requirements?

The Driver Source (Pin 2) must connect directly to the gate driver IC's source output via a short, low-inductance trace, while Power Source (Pins 3–11) routes to the main power ground plane. Mixing these paths introduces gate ringing and timing skew; separation ensures <100 ps gate delay matching between paralleled units.

Is the internal body diode suitable for synchronous rectification in LLC secondary-side applications?

No - the internal body diode is optimized for primary-side commutation (e.g., ZVS turn-on), not secondary-side synchronous rectification. Its Q_rr and forward voltage (1.0 V @ 12.5 A) are not competitive with discrete Schottky or GaN FETs used on the secondary side; external synchronous rectifiers remain mandatory.

IPDQ65R080CFD7AXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 630µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2513 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 223W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IPDQ65R080CFD7AXTMA1 FAQ

1.How can I place an order for IPDQ65R080CFD7AXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDQ65R080CFD7AXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDQ65R080CFD7AXTMA1 reliable?

The price and inventory of IPDQ65R080CFD7AXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDQ65R080CFD7AXTMA1 is usually 5 days.

3.What payment methods are accepted for IPDQ65R080CFD7AXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDQ65R080CFD7AXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDQ65R080CFD7AXTMA1?

IPDQ65R080CFD7AXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDQ65R080CFD7AXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDQ65R080CFD7AXTMA1?

For technical support, including IPDQ65R080CFD7AXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDQ65R080CFD7AXTMA1 requirements.

6.How does Aetrix verify that IPDQ65R080CFD7AXTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDQ65R080CFD7AXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ65R080CFD7AXTMA1 meets industry standards.

7.What is the process for return or replacement of IPDQ65R080CFD7AXTMA1?

All IPDQ65R080CFD7AXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ65R080CFD7AXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDQ65R080CFD7AXTMA1 part is unused and in its original packaging.

Return procedure for IPDQ65R080CFD7AXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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