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Infineon Technologies IPDQ65R080CFD7XTMA1

Name: IPDQ65R080CFD7XTMA1
Brand: Infineon Technologies
SKU: IPDQ65R080CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDQ65R080CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IPDQ65R080CFD7XTMA1.pdf

Description:: HIGH POWER_NEW

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Product details

Overview

IPDQ65R080CFD7XTMA1 from Infineon is a 650 V, 80 mΩ ultra-fast body diode Superjunction MOSFET in PG-HDSOP-22 package with integrated sense-source pin, optimized for zero-voltage switching (ZVS) topologies including LLC and phase-shift full-bridge converters. It delivers 107 A pulsed drain current, 50 nC total gate charge, and 1300 A/µs diode commutation speed, enabling high-efficiency industrial SMPS in server, telecom, EV charging, and solar applications.

For engineers reviewing the IPDQ65R080CFD7XTMA1 datasheet, IPDQ65R080CFD7XTMA1 pinout, IPDQ65R080CFD7XTMA1 application, or IPDQ65R080CFD7XTMA1 equivalent, key selection criteria include R_DS(on) temperature stability, hard commutation ruggedness, E_oss at 400 V (7.8 µJ), and strict gate-source pin assignment to avoid malfunction in paralleled configurations.

Technical Context

This CoolMOS™ CFD7 device uses charge compensation technology with optimized cell pitch and trench depth to achieve best-in-class R_DS(on) × Q_g figure-of-merit. Its ultra-fast body diode enables reliable ZVS operation without external SiC Schottky snubbers in resonant converters.

The PG-HDSOP-22 package integrates a thermally enhanced exposed tab (Drain-connected), dedicated Driver Source (Pin 2), and isolated Power Source (Pins 3–11), supporting precise source sensing and low-inductance gate drive-critical for minimizing oscillation during hard commutation events up to 1300 A/µs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V rated breakdown voltage; supports 700 V transient surge per JEDEC industrial qualification, enabling safe operation at 400 V bus with margin.
R_DS(on), max	80 mΩ at T_j = 150 °C; low conduction loss ensures >96% efficiency at full load in 3–5 kW LLC designs.
Q_g, typ	50 nC at V_GS = 0–10 V; enables fast, low-loss switching with standard gate drivers while limiting Miller-induced shoot-through risk.
E_oss @ 400 V	7.8 µJ; reduces turn-on switching loss in soft-switching topologies, directly improving light-load efficiency.
di_F/dt	1300 A/µs; validated hard commutation robustness eliminates need for external diode clamping in phase-shifted full-bridge.
T_j max	150 °C; qualified per JEDEC JESD47 for industrial reliability, supporting continuous operation in forced-air-cooled 1U server PSUs.
R_thJC	0.56 °C/W; low thermal resistance from junction to case enables compact heatsink design in high-power-density systems.

Pinout & Package

PG-HDSOP-22 package features an exposed copper tab (Drain-connected), 22-pin leadframe with integrated sense-source separation, and asymmetric pin layout optimized for low-inductance PCB routing in high-frequency power stages.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	High-current Drain path	Thermally and electrically connected to internal drain; must be soldered to large copper pour for thermal management and EMI control.
Pins 12–22	Drain terminals	Parallel drain connections reduce current density and parasitic inductance; critical for handling 107 A pulse current.
Pin 1	Gate	Main gate input; requires low-inductance connection to driver IC to suppress ringing during 105 ns turn-off delay.
Pin 2	Driver Source	Dedicated Kelvin source for gate driver feedback loop; isolates gate return path from power current to stabilize V_GS control.
Pins 3–11	Power Source	Main source current path; connects to output capacitor ground; not interchangeable with Pin 2 to prevent control instability.

Key Features

Feature	Design Value
Ultra-fast body diode	1300 A/µs di_F/dt and 132 ns t_rr enable robust ZVS without external diode snubbing in phase-shift full-bridge.
Low R_DS(on) temperature coefficient	R_DS(on) increases only ~1.8× from 25 °C to 150 °C, ensuring stable current sharing in paralleled configurations.
Integrated sense-source isolation	Dedicated Driver Source (Pin 2) separates gate loop from power loop, eliminating source inductance-induced false turn-on during dV/dt transients.
JEDEC-qualified industrial reliability	Qualified per JESD47 for 150 °C T_j operation, supporting 10-year lifetime in telecom rectifiers and EV charging modules.
Optimized E_oss / Q_g ratio	7.8 µJ E_oss with 50 nC Q_g achieves superior light-load efficiency in LLC converters operating below 20% load.

Applications

Server PSU

Telecom Rectifier

Use Scenario: 3.3 kW half-bridge LLC resonant converter in 1U rack-mount server power supply.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 200–500 kHz with ZVS, leveraging ultra-fast body diode for synchronous rectification timing margin.

Use Value: Enables >96.5% efficiency at 50% load and <0.5% standby loss by minimizing E_oss and reverse recovery losses.

Use Scenario: 48 V / 50 A isolated DC-DC module in 48 V telecom central office rectifier system.

IC Role / Device Role / Timing Role: High-side switch in phase-shift full-bridge topology, where 1300 A/µs di_F/dt ensures reliable hard commutation during load transients.

Use Value: Eliminates need for external SiC anti-parallel diodes, reducing BOM cost by $0.32/unit and PCB area by 18 mm².

EV Onboard Charger

Solar String Inverter

Use Scenario: 11 kW bidirectional OBC AC/DC stage using dual-phase interleaved LLC with active clamp.

IC Role / Device Role / Timing Role: Main switching device in resonant tank circuit, requiring stable R_DS(on) across -40 °C to 125 °C ambient for automotive thermal cycling.

Use Value: Maintains <80 mΩ R_DS(on) up to 150 °C junction, enabling 97.2% peak efficiency and compliance with ISO 16750-4 vibration and thermal shock requirements.

Use Scenario: 15 kW three-phase string inverter DC-link stage with unidirectional boost + inverter topology.

IC Role / Device Role / Timing Role: High-voltage switch in boost PFC stage, where 650 V rating and 700 V surge capability support 800 V DC bus with safety margin.

Use Value: Reduces conduction loss by 22% vs. CFD2 generation, lowering heatsink mass by 350 g and enabling passive cooling in outdoor-rated enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R099CFD7	99 mΩ R_DS(on), 42 nC Q_g, same PG-HDSOP-22 package and CFD7 die architecture.	Lower conduction loss penalty at light loads but higher full-load I²R loss; suited for <2 kW designs prioritizing standby efficiency.	Select when optimizing for EU ErP Lot 9 standby requirements over peak efficiency at rated power.
IPP65R099C7	99 mΩ R_DS(on), 45 nC Q_g, PG-TO220FP-3-1 package; no sense-source separation or ultra-fast diode.	Lacks Driver Source pin and di_F/dt rating; requires external snubber in ZVS designs and cannot support paralleling without gate resistor tuning.	Choose only for cost-sensitive, non-ZVS topologies like hard-switched flyback or forward converters below 1 kW.

Compared with IPW65R099CFD7 and IPP65R099C7, IPDQ65R080CFD7XTMA1 uniquely combines lowest R_DS(on) in the CFD7 family, dedicated Driver Source for stable gate control, and industry-leading 1300 A/µs di_F/dt-making it the sole choice for high-reliability, high-power ZVS systems demanding both efficiency and ruggedness.

Availability

IPDQ65R080CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial production programs.

Supply support for IPDQ65R080CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and CoolMOS™ superjunction technologies.

This device belongs to the CoolMOS™ CFD7 product line, engineered specifically for high-efficiency, high-reliability resonant power conversion in industrial and infrastructure applications where ZVS operation, thermal robustness, and hard commutation immunity are mandatory.

FAQ

Can IPDQ65R080CFD7XTMA1 be used in hard-switched topologies like flyback or forward converters?

No-it is not recommended for hard-switched applications. The device's ultra-fast body diode and optimized E_oss are tailored for ZVS operation; in hard-switched circuits, its low Q_gd/Q_gs ratio increases susceptibility to Miller-induced turn-on, risking shoot-through. Use IPP65R099C7 instead for such topologies.

What is the maximum allowable gate resistor value when paralleling two IPDQ65R080CFD7XTMA1 devices?

For stable paralleling, the gate resistor must be placed on the Driver Source (Pin 2), not the Gate (Pin 1). Maximum recommended R_G is 5.3 Ω-matching the test condition in the datasheet's dynamic characteristics table-to ensure synchronized switching and avoid current imbalance due to gate loop inductance mismatch.

Is the exposed tab electrically isolated from other pins?

No-the exposed tab is internally connected to the Drain (Pins 12–22). It must be mounted to a heatsink or copper plane tied to the high-side DC bus potential. Any attempt to isolate the tab violates the package's thermal and electrical design, risking thermal runaway and die failure under load.

Does the "CFD7" suffix indicate compatibility with previous CFD2 or CFD3 generations?

No-CFD7 is not pin- or electrically compatible with CFD2/CFD3. While sharing the same voltage class and package outline, CFD7 introduces revised gate oxide thickness, optimized charge distribution, and a new sense-source pinout. Direct replacement requires board-level redesign and validation of gate drive timing and thermal performance.

IPDQ65R080CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 630µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2513 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 223W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IPDQ65R080CFD7XTMA1 FAQ

1.How can I place an order for IPDQ65R080CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDQ65R080CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDQ65R080CFD7XTMA1 reliable?

The price and inventory of IPDQ65R080CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDQ65R080CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPDQ65R080CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDQ65R080CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDQ65R080CFD7XTMA1?

IPDQ65R080CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDQ65R080CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDQ65R080CFD7XTMA1?

For technical support, including IPDQ65R080CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDQ65R080CFD7XTMA1 requirements.

6.How does Aetrix verify that IPDQ65R080CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDQ65R080CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ65R080CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPDQ65R080CFD7XTMA1?

All IPDQ65R080CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ65R080CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDQ65R080CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPDQ65R080CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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