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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDQ65R099CFD7AXTMA1

Name: IPDQ65R099CFD7AXTMA1
Brand: Infineon Technologies
SKU: IPDQ65R099CFD7AXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDQ65R099CFD7AXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IPDQ65R099CFD7AXTMA1.pdf

Description:: AUTOMOTIVE_COOLMOS

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Product details

Overview

IPDQ65R099CFD7AXTMA1 from Infineon is a 650 V, 99 mΩ automotive-qualified Superjunction MOSFET in PG-HDSOP-22 package with Kelvin source configuration, integrated fast body diode (di/dt = 1300 A/μs), and 39 nC total gate charge. It delivers ultra-low R_DS(on) × Q_g and R_DS(on) × E_oss FoM for high-efficiency PFC and ZVS LLC resonant converters in on-board chargers.

For engineers reviewing the IPDQ65R099CFD7AXTMA1 datasheet, IPDQ65R099CFD7AXTMA1 pinout, IPDQ65R099CFD7AXTMA1 application, or IPDQ65R099CFD7AXTMA1 equivalent, key selection criteria include its AEC-Q101 qualification, 1300 A/μs body diode commutation speed, Kelvin source architecture for gate control stability, and 0.67 °C/W junction-to-case thermal resistance in high-power SMD layout.

Technical Context

This CoolMOS™ CFD7A device implements a Kelvin source structure with separate Driver Source (Pin 2) and Power Source (Pins 3–11), enabling precise gate drive control and minimizing source inductance impact on switching behavior. Its integrated fast-recovery body diode (t_rr = 113 ns, Q_rr = 0.60 μC) supports zero-voltage switching in phase-shift full-bridge and LLC topologies.

The MOSFET features 650 V V_(BR)DSS, 99 mΩ R_DS(on) at V_GS = 10 V and T_j = 25°C, and 100% avalanche-tested ruggedness (E_AS = 97 mJ). Gate plateau voltage is 5.7 V, and it operates within −40°C to +150°C junction temperature range with MSL1 reflow compatibility.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	650 V - Withstands DC blocking up to 650 V without breakdown, suitable for 400 V AC-input PFC stages.
R_DS(on)	99 mΩ max at V_GS = 10 V, T_j = 25°C - Enables low conduction loss in high-current DC-DC output stages.
Q_g	39 nC - Total gate charge determines driver power requirement and influences switching transition time.
E_oss	76 pF energy-related - Low effective output capacitance reduces turn-off energy loss in hard-switched applications.
di/dt (body diode)	1300 A/μs - Supports fast commutation in resonant circuits without reverse recovery failure.
R_thJC	0.67 °C/W - High thermal conductivity enables >186 W power dissipation at T_C = 25°C with minimal junction rise.
t_rr	113 ns - Short reverse recovery time minimizes switching losses during body diode conduction in bridge legs.

Pinout & Package

Package: PG-HDSOP-22 (22-pin thermally enhanced DSO-style leadframe with exposed drain tab).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 12–22 + Tab)	Main current return path	High-current drain connection with low-inductance tab for thermal and electrical performance.
Gate (Pin 1)	Control input	Standard gate terminal; requires external gate resistor placement on Driver Source (not Gate) for paralleling.
Power Source (Pins 3–11)	Power return reference	Carries main load current; not interchangeable with Driver Source due to internal routing.
Driver Source (Pin 2)	Kelvin source sense	Provides dedicated low-noise gate drive reference; critical for stable switching under high di/dt.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and charging systems requiring long-term reliability under harsh thermal cycling.
Kelvin source architecture	Separates high-current power source from gate drive reference, eliminating source inductance-induced oscillation and improving dv/dt immunity.
Integrated fast body diode	1300 A/μs commutation capability and 113 ns t_rr enable robust operation in ZVS LLC and phase-shift full-bridge without external diode.
Ultra-low FoM (R_DS(on) × Q_g)	Enables higher switching frequencies (>100 kHz) while maintaining efficiency in PFC and isolated DC-DC stages.

Applications

On-Board Charger (OBC) PFC Stage

LLC Resonant DC-DC Converter

Use Scenario: Boost-type active PFC front-end in 11 kW bi-directional OBC for EVs.

IC Role / Device Role / Timing Role: Main switching device handling 25 A RMS line current at 65–100 kHz switching frequency.

Use Value: 99 mΩ R_DS(on) and 39 nC Q_g reduce both conduction and switching losses, achieving >98.5% PFC efficiency at full load.

Use Scenario: Primary-side switch in 3.3 kW LLC transformer-isolated DC-DC stage for 400 V → 48 V conversion.

IC Role / Device Role / Timing Role: Zero-voltage switched high-side switch operating at 200–300 kHz with soft turn-on enabled by fast body diode.

Use Value: 1300 A/μs body diode di/dt and 113 ns t_rr ensure reliable ZVS across wide load range and prevent shoot-through during dead-time transitions.

Phase-Shift Full-Bridge (PSFB) Inverter

Industrial 3-Phase PFC Module

Use Scenario: High-efficiency 15 kW PSFB inverter for fast-charging infrastructure with 400–800 V DC bus.

IC Role / Device Role / Timing Role: High-side and low-side synchronous switch with Kelvin source for precise gate timing control.

Use Value: Separate Driver Source (Pin 2) eliminates gate loop instability during 120 V/ns dv/dt transients, ensuring clean turn-off in high-dV/dt bridge configurations.

Use Scenario: Three-phase interleaved PFC module for industrial UPS and server power supplies.

IC Role / Device Role / Timing Role: Single-phase boost switch rated for continuous 29 A (T_C = 100°C) with parallel-ready layout.

Use Value: PG-HDSOP-22 package with 0.67 °C/W R_thJC allows direct heatsink mounting and scalable thermal design across multi-phase layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R099CFD7XKSA1	TO-247-4L package; identical R_DS(on), Q_g, and CFD7A die; no Kelvin source pins - single-source configuration.	Limited to lower-density PCB layouts; lacks Kelvin source for gate drive stability in high-di/dt bridges.	Select when thermal mass and through-hole mounting are prioritized over SMD space savings and gate control precision.
IPP65R099CFD7A	PG-TO220-3-1 package; same CFD7A die; no Kelvin source; 3-pin TO-220 with isolated tab.	Suitable only for non-paralleled, lower-frequency (<65 kHz) PFC; no driver source pin for advanced gate control.	Choose for cost-sensitive industrial SMPS where AEC-Q101 is not required and layout simplicity outweighs efficiency optimization.

Compared with IPW65R099CFD7XKSA1 and IPP65R099CFD7A, the IPDQ65R099CFD7AXTMA1 uniquely combines AEC-Q101 qualification, SMD scalability, and Kelvin source architecture-enabling higher power density, tighter gate timing control, and robust ZVS operation in automotive OBC and fast-charging systems.

Availability

IPDQ65R099CFD7AXTMA1 is available at Aetrix Electronics and suitable for on-board chargers, LLC resonant DC-DC converters, and phase-shift full-bridge inverters requiring stable component supply, automotive-grade reliability, and high thermal performance in compact SMD layouts.

Supply support for IPDQ65R099CFD7AXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the CoolMOS™ CFD7A product line-designed specifically for high-efficiency, high-reliability automotive and industrial power conversion, emphasizing fast body diode performance, Kelvin source control, and AEC-Q101 compliance.

FAQ

What is the purpose of the separate Driver Source (Pin 2) and Power Source (Pins 3–11)?

The Driver Source (Pin 2) provides a Kelvin connection for gate drive reference, isolating the control loop from high di/dt noise on the Power Source (Pins 3–11). This prevents gate oscillation and ensures stable switching, especially critical in paralleled configurations and high-frequency resonant topologies where source inductance would otherwise distort gate voltage waveforms.

Can IPDQ65R099CFD7AXTMA1 be used in linear mode operation?

No-Infineon explicitly advises against linear mode operation for this device. The datasheet states that linear mode assessment requires direct technical consultation with Infineon sales, as uncontrolled power dissipation in the linear region risks thermal runaway and premature failure due to localized hot-spot formation in the superjunction structure.

Why is the gate resistor recommended on the Driver Source instead of the Gate pin for paralleling?

Placing the gate resistor on the Driver Source (Pin 2) equalizes gate loop inductance across paralleled devices and avoids asymmetry caused by differing source inductances. If placed on the Gate (Pin 1), parasitic inductance differences between devices can cause uneven turn-on/turn-off timing, leading to current imbalance and potential thermal overstress in one unit.

Is the body diode truly integrated and optimized for ZVS operation?

Yes-the body diode is an intrinsic part of the CoolMOS™ CFD7A silicon structure, engineered for fast recovery (t_rr = 113 ns, Q_rr = 0.60 μC) and high di/dt capability (1300 A/μs). Unlike standard SJ MOSFETs, it is process-tuned to minimize tail current and enable reliable zero-voltage switching in LLC and PSFB topologies without external diode supplementation.

IPDQ65R099CFD7AXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 99mOhm @ 9.7A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 480µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1942 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 186W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IPDQ65R099CFD7AXTMA1 FAQ

1.How can I place an order for IPDQ65R099CFD7AXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDQ65R099CFD7AXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDQ65R099CFD7AXTMA1 reliable?

The price and inventory of IPDQ65R099CFD7AXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDQ65R099CFD7AXTMA1 is usually 5 days.

3.What payment methods are accepted for IPDQ65R099CFD7AXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDQ65R099CFD7AXTMA1 transactions.

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4.How is shipping managed for IPDQ65R099CFD7AXTMA1?

IPDQ65R099CFD7AXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDQ65R099CFD7AXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDQ65R099CFD7AXTMA1?

For technical support, including IPDQ65R099CFD7AXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDQ65R099CFD7AXTMA1 requirements.

6.How does Aetrix verify that IPDQ65R099CFD7AXTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDQ65R099CFD7AXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ65R099CFD7AXTMA1 meets industry standards.

7.What is the process for return or replacement of IPDQ65R099CFD7AXTMA1?

All IPDQ65R099CFD7AXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ65R099CFD7AXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDQ65R099CFD7AXTMA1 part is unused and in its original packaging.

Return procedure for IPDQ65R099CFD7AXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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