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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDQ65R099CFD7XTMA1

Name: IPDQ65R099CFD7XTMA1
Brand: Infineon Technologies
SKU: IPDQ65R099CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDQ65R099CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IPDQ65R099CFD7XTMA1.pdf

Description:: HIGH POWER_NEW

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPDQ65R099CFD7XTMA1 from Infineon is a 650 V superjunction MOSFET in the CoolMOS™ CFD7 family, optimized for zero-voltage switching (ZVS) topologies including LLC and phase-shift full-bridge converters. It delivers 99 mΩ max R_DS(on), 39 nC typical gate charge, and 1300 A/µs body diode commutation speed, enabling high-efficiency, high-power-density industrial SMPS in server, telecom, EV charging, and solar applications.

For engineers reviewing the IPDQ65R099CFD7XTMA1 datasheet, IPDQ65R099CFD7XTMA1 pinout, IPDQ65R099CFD7XTMA1 application, or IPDQ65R099CFD7XTMA1 equivalent, key selection criteria include ultra-fast body diode ruggedness, low temperature coefficient of R_DS(on), E_oss of 6.1 µJ at 400 V, and PG-HDSOP-22 package thermal performance with 0.67 °C/W R_thJC.

Technical Context

This device implements Infineon's 650 V CoolMOS™ CFD7 silicon technology, featuring an integrated fast-recovery body diode with 113–170 ns reverse recovery time and 1.2 µC Q_rr. Its gate plateau voltage is 5.7 V, and it supports hard commutation robustness up to 1300 A/µs di_F/dt under 400 V bus conditions.

The MOSFET is rated for 700 V drain-source voltage at maximum junction temperature, exhibits 0.099 Ω R_DS(on) at T_j = 150 °C, and achieves 22 ns turn-on delay and 85 ns turn-off delay with 5.3 Ω gate resistor-enabling precise timing control in resonant converters operating above 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	700 V - Withstands transient overvoltage spikes beyond nominal 650 V rating without avalanche failure.
R_DS(on) max	99 mΩ @ T_j = 25 °C - Enables low conduction loss in high-current primary-side switches.
Q_g typ	39 nC - Reduces gate drive power requirement and enables efficient high-frequency operation.
E_oss	6.1 µJ @ 400 V - Low output capacitance energy minimizes switching loss during ZVS transitions.
di_F/dt max	1300 A/µs - Supports reliable hard commutation in asymmetric half-bridge and PSFB topologies.
I_D,pulse	82 A - Sustains short-duration peak currents during startup or overload without thermal runaway.
R_thJC	0.67 °C/W - Enables high power dissipation (186 W at T_C = 25 °C) with minimal junction-to-case temperature rise.

Pinout & Package

IPDQ65R099CFD7XTMA1 uses the PG-HDSOP-22 surface-mount package with exposed thermal tab (pin 12–22 and tab), designed for high-current, high-thermal-demand applications. Gate is on pin 1; power source (source) is pins 3–11; driver source (sense source) is pin 2; drain connects to the tab and pins 12–22. Source and sense source pins are non-interchangeable.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal for MOSFET channel activation; requires low-inductance gate loop layout.
Pins 3–11	Power Source	Main current return path; carries full load current and must be routed with wide copper pour.
Pin 2	Driver Source (Sense Source)	Reference for gate driver IC feedback; separates high-current source path from gate control reference.
Pins 12–22 + Tab	Drain	High-voltage input node connected to bus rail; tab provides primary thermal conduction path to PCB.

Key Features

Feature	Design Value
Ultra-fast body diode	113–170 ns t_rr, 1.2 µC Q_rr - Enables clean ZVS turn-on with minimal reverse recovery loss and voltage overshoot.
Low R_DS(on) tempco	R_DS(on) increases only ~1.8× from 25 °C to 150 °C - Improves current sharing stability in paralleled configurations.
High dv/dt ruggedness	120 V/ns (MOSFET), 70 V/ns (diode) - Prevents false turn-on in high-noise, high-dV/dt environments like multi-phase bridges.
Integrated ESD protection	HBM Class 2 (≥2 kV) - Eliminates need for external ESD clamps in board-level handling and assembly.
JEDEC industrial qualification	Qualified per JESD47 - Ensures reliability for continuous operation in 0–150 °C ambient industrial environments.

Applications

Server PSU

Telecom Rectifier

Use Scenario: Primary-side switch in 3–6 kW LLC resonant DC-DC converters powering AI accelerator racks.

IC Role / Device Role / Timing Role: High-voltage synchronous rectifier replacement with ZVS-capable body diode for soft-switched turn-on.

Use Value: Achieves >97% efficiency at 50% load via 6.1 µJ E_oss and 1300 A/µs di_F/dt, reducing heatsink size by 35% vs. CFD2.

Use Scenario: Active clamp forward or PSFB stage in -48 V telecom rectifiers delivering 2–4 kW with 100–200 kHz switching.

IC Role / Device Role / Timing Role: High-side switch with fast body diode conducting freewheeling current during dead-time intervals.

Use Value: Enables 20% higher power density through 0.67 °C/W R_thJC and 186 W P_tot, eliminating forced-air cooling in compact enclosures.

EV Onboard Charger

Solar String Inverter

Use Scenario: Primary switch in bidirectional AC-DC/DC-AC stages of 11 kW OBCs with SiC/GaN hybrid control.

IC Role / Device Role / Timing Role: Hard-commutated switch in asymmetrical half-bridge topology requiring robust di_F/dt capability.

Use Value: Survives 1300 A/µs commutation events without latch-up, extending lifetime beyond 15-year automotive requirements.

Use Scenario: DC-link switch in 10–25 kW string inverters operating with variable irradiance and grid fault ride-through demands.

IC Role / Device Role / Timing Role: Bus voltage clamping element during grid transients, leveraging 700 V V_DS margin and 97 mJ E_AS.

Use Value: Provides 200 V extra bus voltage headroom for overvoltage tolerance in ungrounded PV systems, reducing system derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R099CFD7	TO-247-3 package; identical die, no sense source pin; R_thJC = 0.45 °C/W	Better thermal performance but lacks driver source sensing; unsuitable for current-mode gate drivers requiring Kelvin source feedback.	Select when PCB space allows TO-247 mounting and gate driver does not require isolated source reference.
IPP65R099CFD7	PG-TO220-3-1 package; same R_DS(on), Q_g, and di_F/dt; R_thJC = 0.85 °C/W	Lower thermal performance limits continuous power to ≤120 W; suitable only for lower-power or forced-air-cooled designs.	Select for cost-sensitive, lower-power (<5 kW) industrial supplies where HDSOP-22 footprint is unavailable.

Compared with IPW65R099CFD7 and IPP65R099CFD7, IPDQ65R099CFD7XTMA1 uniquely combines sense-source capability, 0.67 °C/W thermal resistance, and PG-HDSOP-22 surface-mount compatibility-making it optimal for high-density, current-sense-enabled ZVS converters where layout precision and thermal management are critical.

Availability

IPDQ65R099CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and high thermal performance in surface-mount form factor.

Supply support for IPDQ65R099CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density resonant converters demanding ultra-fast body diodes and hard commutation robustness in ZVS topologies.

FAQ

Can IPDQ65R099CFD7XTMA1 replace older CFD2-series MOSFETs in existing designs?

Yes-IPDQ65R099CFD7XTMA1 is a direct successor to the 650 V CoolMOS™ CFD2 series with improved R_DS(on), lower E_oss, and enhanced di_F/dt capability. Pinout and package are identical, but gate drive timing may require minor adjustment due to reduced Q_g (39 nC vs. ~45 nC in CFD2) and lower V_plateau (5.7 V). No layout change is needed.

Why must the Driver Source (Pin 2) and Power Source (Pins 3–11) not be exchanged?

Pin 2 is internally connected to a dedicated Kelvin sense source, providing noise-immune gate driver reference. Swapping it with power source pins introduces gate loop inductance and ground bounce, causing erratic switching, shoot-through risk, and potential device failure. The internal routing is physically separate and not interchangeable.

What is the recommended gate resistor value for ZVS operation in an LLC converter?

Infineon recommends R_G = 5.3 Ω (as used in datasheet test conditions) for balanced turn-on/turn-off timing and minimized EMI. For ZVS optimization, values between 4.7 Ω and 6.8 Ω are validated-lower values improve turn-on speed but increase EMI; higher values reduce dV/dt stress but risk incomplete ZVS at light loads.

Is the PG-HDSOP-22 package lead-free and RoHS-compliant?

Yes-IPDQ65R099CFD7XTMA1 is manufactured using lead-free solderable terminations and complies with EU RoHS Directive 2011/65/EU and REACH SVHC regulations. The package meets MSL Level 1 (floor life unlimited) and supports standard Pb-free reflow profiles up to 260 °C peak temperature.

IPDQ65R099CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 99mOhm @ 9.7A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 480µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1942 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 186W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IPDQ65R099CFD7XTMA1 FAQ

1.How can I place an order for IPDQ65R099CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDQ65R099CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDQ65R099CFD7XTMA1 reliable?

The price and inventory of IPDQ65R099CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDQ65R099CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPDQ65R099CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDQ65R099CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDQ65R099CFD7XTMA1?

IPDQ65R099CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDQ65R099CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDQ65R099CFD7XTMA1?

For technical support, including IPDQ65R099CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDQ65R099CFD7XTMA1 requirements.

6.How does Aetrix verify that IPDQ65R099CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDQ65R099CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ65R099CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPDQ65R099CFD7XTMA1?

All IPDQ65R099CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ65R099CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDQ65R099CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPDQ65R099CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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