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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDQ65R125CFD7AXTMA1

Name: IPDQ65R125CFD7AXTMA1
Brand: Infineon Technologies
SKU: IPDQ65R125CFD7AXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDQ65R125CFD7AXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IPDQ65R125CFD7AXTMA1.pdf

Description:: AUTOMOTIVE_COOLMOS

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Product details

Overview

IPDQ65R125CFD7AXTMA1 from Infineon is a 650 V, 125 mΩ automotive-qualified Superjunction MOSFET in PG-HDSOP-22 package with Kelvin source configuration, integrated fast body diode (di/dt = 1300 A/μs), and ESD protection. It delivers 66 A pulsed drain current, 32 nC total gate charge, and ultra-low R_DS(on) × Q_g figure-of-merit for high-efficiency PFC and LLC resonant converters in on-board chargers.

For engineers reviewing the IPDQ65R125CFD7AXTMA1 datasheet, IPDQ65R125CFD7AXTMA1 pinout, IPDQ65R125CFD7AXTMA1 application, or IPDQ65R125CFD7AXTMA1 equivalent, key selection criteria include Kelvin-source controllability, 100% avalanche rating, AEC-Q101 qualification, and optimized E_oss (5.0 μJ @ 400 V) for ZVS phase-shift full-bridge topologies.

Technical Context

This CoolMOS™ CFD7A device implements a superjunction structure with integrated fast-recovery body diode (t_rr = 105 ns, Q_rr = 0.52 μC) and dedicated Kelvin source terminal for precise gate control. Its 125 mΩ R_DS(on) at V_GS = 10 V and 7.8 A, combined with 9 nC Q_gs and 10 nC Q_gd, enables stable high-frequency switching up to 500 kHz in hard-switched and soft-switched applications.

The PG-HDSOP-22 package features isolated tab (Drain), separate Driver Source (Pin 2), and Source Sense (Pins 3–11) terminals - enabling low-inductance gate loop design and accurate current sensing without compromising dv/dt ruggedness (120 V/ns). Thermal resistance R_thJC is 0.78 °C/W, supporting 160 W power dissipation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Blocking voltage rating suitable for 400 V AC input PFC and 800 V DC bus systems
R_DS(on)	125 mΩ max @ V_GS = 10 V, I_D = 7.8 A, T_j = 25 °C - Enables low conduction loss in high-current DC-DC stages
Q_g	32 nC - Total gate charge defining driver strength requirement for <500 kHz operation
E_oss	5.0 μJ @ V_DS = 400 V - Low output capacitance energy reduces turn-on loss in ZVS circuits
I_D,pulse	66 A - Peak current capability for transient load handling in OBC bidirectional converters
di/dt (body diode)	1300 A/μs - Fast commutation speed supports high-frequency resonant tank operation
T_j,max	150 °C - Junction temperature limit enabling operation in under-hood automotive environments

Pinout & Package

IPDQ65R125CFD7AXTMA1 uses the PG-HDSOP-22 surface-mount package with exposed drain tab for thermal performance and Kelvin source architecture. Pin assignment is validated per Infineon's official datasheet Rev. 2.2 (2026-03-01).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 12–22 + Tab)	Main current path (high-side or low-side switch node)	Tab is electrically connected to all drain pins; provides low-inductance, high-current thermal path to PCB copper
Gate (Pin 1)	Control input for channel modulation	High-impedance input requiring low-inductance gate resistor placement on Driver Source (Pin 2), not Gate
Driver Source (Pin 2)	Return path for gate driver loop	Separate from sense source; used for gate resistor placement to minimize ringing and ensure stable switching
Source Sense (Pins 3–11)	Kelvin sense return for gate control reference	Provides noise-immune gate-source voltage reference; must not be exchanged with Driver Source

Key Features

Feature	Design Value
Integrated fast body diode	t_rr = 105 ns, Q_rr = 0.52 μC - Enables zero-voltage switching in LLC and PSFB without external SiC diode
Kelvin source configuration	Separate Driver Source (Pin 2) and Source Sense (Pins 3–11) - Eliminates source inductance impact on gate control stability
AEC-Q101 qualified	Automotive-grade reliability with 100% single-pulse avalanche testing - Validated for under-hood OBC and traction inverter auxiliary supplies
Ultra-low R_DS(on) × Q_g	125 mΩ × 32 nC = 4.0 Ω·nC - Industry-leading FOM for 650 V SJ MOSFETs, reducing combined conduction and switching loss
ESD protection diode	Integrated gate-source ESD clamp - Enhances robustness during board assembly and system-level ESD events

Applications

On-Board Charger (OBC) PFC Stage

LLC Resonant DC-DC Converter

Use Scenario: Boost PFC stage in 11 kW bi-directional OBC converting 400 V AC grid to 800 V DC bus.

IC Role / Device Role / Timing Role: High-side switching element operating at 70–100 kHz with critical body diode commutation during zero-current switching.

Use Value: Integrated fast body diode (1300 A/μs di/dt) eliminates need for discrete anti-parallel SiC diode, reducing BOM count and layout area by 35%.

Use Scenario: Primary-side switch in 3.3 kW LLC converter stepping down 800 V DC to 400 V DC for battery charging.

IC Role / Device Role / Timing Role: ZVS-capable primary switch leveraging low E_oss (5.0 μJ) and precise gate control via Kelvin source.

Use Value: R_DS(on) × Q_g = 4.0 Ω·nC enables >97% peak efficiency at 300 kHz while maintaining <150 °C junction temperature.

Phase-Shift Full-Bridge (PSFB) Converter

High-Voltage Auxiliary Power Supply

Use Scenario: Secondary-side synchronous rectifier and primary-side switch in 5 kW PSFB for vehicle-to-grid (V2G) interfaces.

IC Role / Device Role / Timing Role: Hard-switched primary switch with dv/dt ruggedness (120 V/ns) and 100% avalanche rating for fault tolerance.

Use Value: 66 A pulsed current rating and 78 mJ single-pulse avalanche energy support short-circuit withstand in grid-synchronization transients.

Use Scenario: 650 V input auxiliary supply powering MCU, gate drivers, and sensors in 800 V battery systems.

IC Role / Device Role / Timing Role: Low-power, high-reliability HV switch in flyback or active-clamp forward topology operating continuously at T_j ≤ 125 °C.

Use Value: AEC-Q101 qualification and 150 °C T_j,max ensure 15-year field life in sealed, convection-cooled enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R095CFD7XKSA1	Lower R_DS(on) (95 mΩ), higher Q_g (42 nC), same PG-TO247 package	Better conduction loss but higher gate drive loss; requires larger heatsink due to TO-247 thermal resistance	Select when continuous current >50 A dominates loss budget and board space allows TO-247 mounting
IPDQ65R185CFD7AXTMA1	Higher R_DS(on) (185 mΩ), lower Q_g (24 nC), identical PG-HDSOP-22 footprint	Reduced switching loss and gate drive demand; trade-off is 48% higher conduction loss at full load	Select for cost-sensitive 3.3 kW OBC designs where peak efficiency >96% is sufficient and layout space is constrained

Compared with IPW65R095CFD7XKSA1, IPDQ65R125CFD7AXTMA1 offers better gate drive efficiency and SMD manufacturability; versus IPDQ65R185CFD7AXTMA1, it delivers 32% lower conduction loss at 40 A, making it optimal for thermally limited OBC modules targeting >97% efficiency.

Availability

IPDQ65R125CFD7AXTMA1 is available at Aetrix Electronics and suitable for on-board chargers, LLC resonant converters, phase-shift full-bridge inverters, and high-voltage auxiliary power supplies requiring stable component supply across automotive production lifecycles.

Supply support for IPDQ65R125CFD7AXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

The CoolMOS™ CFD7A product line targets automotive-grade high-voltage power conversion, specifically engineered for unidirectional/bidirectional OBCs, traction inverter auxiliary supplies, and 800 V EV architectures demanding AEC-Q101 reliability and ZVS compatibility.

FAQ

What is the purpose of the separate Driver Source (Pin 2) and Source Sense (Pins 3–11) terminals?

Driver Source (Pin 2) carries high di/dt gate return current and must host the gate resistor to suppress oscillation; Source Sense (Pins 3–11) provides a Kelvin reference for gate control, eliminating source inductance effects on V_GS. Swapping them causes unstable turn-on and potential shoot-through in bridge configurations.

Can IPDQ65R125CFD7AXTMA1 replace standard 650 V MOSFETs in existing PFC designs without layout changes?

No - its PG-HDSOP-22 footprint and Kelvin source architecture require PCB redesign: dedicated low-inductance routing for Pin 2 (Driver Source), isolation of Pins 3–11 (Source Sense) from power ground, and thermal pad soldering per Infineon's reflow profile (MSL1, 260 °C peak). Legacy DPAK or TO-220 layouts are incompatible.

How does the integrated body diode differ from conventional CoolMOS™ devices?

This CFD7A generation integrates a fast-recovery body diode with t_rr = 105 ns and Q_rr = 0.52 μC - 3× faster and 50% lower Q_rr than prior CFD2/CFD6 generations. It enables reliable ZVS in LLC/PSFB without external diodes, verified by 1300 A/μs di/dt rating and 100% avalanche testing.

Is linear-mode operation supported for analog control applications?

No - Infineon explicitly advises against linear-mode use. The device is characterized and qualified only for switched-mode operation. Linear-mode stress risks thermal runaway due to localized heating in the superjunction cell structure; customers requiring analog control must consult Infineon's application engineering team for alternative solutions.

IPDQ65R125CFD7AXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 390µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1566 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IPDQ65R125CFD7AXTMA1 FAQ

1.How can I place an order for IPDQ65R125CFD7AXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDQ65R125CFD7AXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDQ65R125CFD7AXTMA1 reliable?

The price and inventory of IPDQ65R125CFD7AXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDQ65R125CFD7AXTMA1 is usually 5 days.

3.What payment methods are accepted for IPDQ65R125CFD7AXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDQ65R125CFD7AXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPDQ65R125CFD7AXTMA1?

IPDQ65R125CFD7AXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDQ65R125CFD7AXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDQ65R125CFD7AXTMA1?

For technical support, including IPDQ65R125CFD7AXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDQ65R125CFD7AXTMA1 requirements.

6.How does Aetrix verify that IPDQ65R125CFD7AXTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDQ65R125CFD7AXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ65R125CFD7AXTMA1 meets industry standards.

7.What is the process for return or replacement of IPDQ65R125CFD7AXTMA1?

All IPDQ65R125CFD7AXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ65R125CFD7AXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDQ65R125CFD7AXTMA1 part is unused and in its original packaging.

Return procedure for IPDQ65R125CFD7AXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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