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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPDQ65R125CFD7XTMA1

Name: IPDQ65R125CFD7XTMA1
Brand: Infineon Technologies
SKU: IPDQ65R125CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPDQ65R125CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 22-PowerBSOP Module

Datasheet:: IPDQ65R125CFD7XTMA1.pdf

Description:: HIGH POWER_NEW

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Product details

Overview

IPDQ65R125CFD7XTMA1 from Infineon is a 650 V superjunction MOSFET in the CoolMOS™ CFD7 family, optimized for zero-voltage switching (ZVS) topologies. It delivers 125 mΩ max R_DS(on), 66 A pulsed drain current, and ultra-fast body diode recovery (dI_F/dt = 1300 A/µs), enabling high-efficiency LLC and phase-shift full-bridge converters in server power supplies and EV charging stations.

For engineers reviewing the IPDQ65R125CFD7XTMA1 datasheet, IPDQ65R125CFD7XTMA1 pinout, IPDQ65R125CFD7XTMA1 application, or IPDQ65R125CFD7XTMA1 equivalent, key selection criteria include hard commutation ruggedness, E_oss (5.0 µJ @ 400 V), thermal resistance (R_thJC = 0.78 °C/W), gate charge profile (Q_g = 32 nC), and PG-HDSOP-22 package layout with isolated tab and dedicated driver source pin.

Technical Context

This device implements Infineon's 650 V CoolMOS™ CFD7 silicon technology, featuring an integrated fast-recovery body diode and optimized charge distribution for reduced E_oss and low Q_gd/Q_g ratio. Its dI_F/dt rating of 1300 A/µs and 78 mJ single-pulse avalanche energy support robust operation under hard commutation stress in resonant converters.

The PG-HDSOP-22 package integrates a thermally exposed copper tab (pins 12–22) and separates driver source (pin 2) from power source (pins 3–11), enabling precise gate loop control and minimizing common-source inductance. Gate threshold voltage (4.0 V typ.) and plateau voltage (5.7 V) are calibrated for stable 12 V gate drive compatibility in industrial SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Rated blocking voltage for 400 V bus applications with 1.6× safety margin against transients
R_DS(on) max	125 mΩ @ T_j = 150°C - Enables <24 A continuous conduction at 100°C case temperature with low conduction loss
Q_g typ	32 nC @ V_DD = 400 V - Determines gate driver power requirement and switching speed in ZVS circuits
E_oss	5.0 µJ @ 400 V - Directly impacts turn-on loss and soft-switching window in LLC resonant tanks
dI_F/dt max	1300 A/µs - Guarantees reliable body diode commutation without oscillation or failure in phase-shifted bridges
R_thJC	0.78 °C/W - Supports >160 W power dissipation with minimal junction-to-case thermal drop under forced-air cooling
I_D,pulse	66 A - Allows short-duration overload handling during startup or fault conditions in telecom rectifiers

Pinout & Package

IPDQ65R125CFD7XTMA1 uses the PG-HDSOP-22 surface-mount package with thermally enhanced copper tab (exposed drain) and 22-pin leadframe. The package features separate driver source (pin 2) and power source (pins 3–11) terminals to minimize gate loop inductance and improve switching stability.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Pins 12–22)	Drain	Thermally exposed copper pad serving as primary heat path and high-current drain connection
Pin 1	Gate	Main gate input terminal; requires external gate resistor placement on driver source side per design note
Pin 2	Driver Source	Dedicated Kelvin source for gate driver feedback-non-interchangeable with power source pins
Pins 3–11	Power Source	Parallel source connections for main current return path; not interchangeable with pin 2

Key Features

Feature	Design Value
Ultra-fast body diode	1300 A/µs dI_F/dt and 105 ns t_rr enable reliable ZVS in phase-shift full-bridge without snubbers
Low R_DS(on) tempco	R_DS(on) increases only ~1.8× from 25°C to 150°C - improves current sharing in paralleled configurations
Reduced E_oss	5.0 µJ @ 400 V - cuts turn-on loss by >30% vs. prior CFD2 generation in 100 kHz LLC designs
Hard commutation ruggedness	78 mJ single-pulse avalanche energy - withstands repeated line surges and transformer leakage spikes
ESD-protected gate	Integrated ESD diode (per datasheet footnote *2) - eliminates need for external gate protection in clean assembly environments

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW front-end PFC + LLC resonant DC/DC stage in 1U rack-mounted server PSU.

IC Role / Device Role / Timing Role: Primary-side high-side switch in LLC half-bridge, operating at 200–500 kHz with ZVS across full load range.

Use Value: 125 mΩ R_DS(on) and 5.0 µJ E_oss reduce conduction + switching losses, achieving >96% efficiency at 50% load.

Use Scenario: 2 kW distributed power architecture (DPA) rectifier for 48 V intermediate bus in macro base stations.

IC Role / Device Role / Timing Role: High-frequency synchronous rectifier driver in phase-shift full-bridge topology with adaptive dead-time control.

Use Value: 1300 A/µs dI_F/dt ensures clean body diode commutation during light-load burst-mode operation.

EV Onboard Charger

Solar String Inverter

Use Scenario: Bidirectional AC/DC + DC/DC stage in 11 kW OBC supporting 3.3–22 kW modes.

IC Role / Device Role / Timing Role: Isolated gate driver output stage for SiC half-bridge in dual-active-bridge (DAB) topology.

Use Value: Separate driver source (pin 2) minimizes gate loop inductance, enabling clean 100 ns rise/fall times at 100 kHz.

Use Scenario: 10 kW string inverter with two-stage conversion: boost MPPT + three-level NPC inverter.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost stage, switching at 65 kHz with 400 V DC link.

Use Value: 650 V V_DS rating and 70 V/ns reverse diode dv/dt withstand support 1000 V PV open-circuit voltage derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R125CFD7	TO-247-3 package; identical die, no driver source pin; R_thJC = 0.45 °C/W	Better thermal performance but higher gate loop inductance; unsuitable for ultra-high-frequency ZVS	Select when board space allows TO-247 mounting and gate drive layout cannot isolate source paths
IPP65R125CFD7	PG-TO220-3-1 package; same die; no Kelvin source; R_thJC = 0.55 °C/W	Limited to ≤200 kHz operation due to higher parasitic inductance; lower cost for non-ZVS designs	Select for cost-sensitive industrial SMPS where E_oss and dI_F/dt are less critical than BOM cost

Compared with IPW65R125CFD7 and IPP65R125CFD7, IPDQ65R125CFD7XTMA1 trades slightly higher R_thJC for precise gate control via driver source pin-making it uniquely suited for PCB-limited, high-frequency ZVS systems requiring repeatable timing and minimal ringing.

Availability

IPDQ65R125CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and consistent parametric performance across production lots.

Supply support for IPDQ65R125CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This part belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, engineered specifically for high-efficiency resonant converters in datacenter, telecom, and renewable energy systems where ZVS operation, thermal density, and body diode robustness are critical.

FAQ

Can IPDQ65R125CFD7XTMA1 be used in hard-switched topologies like flyback or forward converters?

No-it is not recommended for hard-switched applications. Its optimized charge profile (low Q_gd/Q_g) and ultra-fast body diode are tailored for ZVS operation. In hard-switched topologies, its low C_oss and high dI_F/dt can cause excessive voltage overshoot and oscillation during turn-off, risking avalanche overstress.

What is the maximum allowable gate resistor value when using pin 2 (driver source)?

The datasheet specifies that gate resistor placement must be on the driver source (pin 2), not the gate (pin 1). While no absolute maximum R_G is given, simulation and application notes indicate R_G ≤ 10 Ω maintains <20 ns rise time and avoids gate oscillation. Higher values degrade ZVS margin and increase switching loss.

Is the tab (pins 12–22) electrically isolated from other pins?

No-the tab is internally connected to the drain (V_DS). It must be mounted on a thermally conductive but electrically isolated heatsink or PCB copper area. Electrical isolation between tab and PCB ground plane is mandatory; thermal interface material must be non-conductive (e.g., ceramic-filled pads).

Does the "CFD7" suffix indicate compatibility with previous CFD2 or CFD3 gate drivers?

Yes-gate threshold (3.5–4.5 V) and plateau voltage (5.7 V) match CFD2/CFD3 families, allowing reuse of existing 12 V gate drivers. However, total gate charge (32 nC) is ~12% lower than CFD2, permitting faster switching with same driver strength and reducing gate drive loss.

IPDQ65R125CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: 22-PowerBSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 390µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1566 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-22-1

IPDQ65R125CFD7XTMA1 FAQ

1.How can I place an order for IPDQ65R125CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPDQ65R125CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPDQ65R125CFD7XTMA1 reliable?

The price and inventory of IPDQ65R125CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPDQ65R125CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPDQ65R125CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPDQ65R125CFD7XTMA1 transactions.

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4.How is shipping managed for IPDQ65R125CFD7XTMA1?

IPDQ65R125CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPDQ65R125CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPDQ65R125CFD7XTMA1?

For technical support, including IPDQ65R125CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPDQ65R125CFD7XTMA1 requirements.

6.How does Aetrix verify that IPDQ65R125CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPDQ65R125CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPDQ65R125CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPDQ65R125CFD7XTMA1?

All IPDQ65R125CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPDQ65R125CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPDQ65R125CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPDQ65R125CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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