My Inquiry
My Account
Infineon Technologies IPF009N04NF2SATMA1
- Part No.:
- IPF009N04NF2SATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-7, D2PAK (6 Leads + Tab)
- Datasheet:
-
IPF009N04NF2SATMA1.pdf
- Description:
- TRENCH <= 40V
- Quantity:
- Payment:
- Shipping:
Inventory:650
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IPF009N04NF2SATMA1 from Infineon is an N-channel enhancement-mode MOSFET in PG-TO263-7 package, rated for 40 V drain-source voltage, 0.9 mΩ typical RDS(on) at VGS = 10 V, and 302 A continuous drain current at TC = 25 °C. It serves as a high-current synchronous rectifier or main switch in DC-DC converters, motor drives, and battery protection circuits.
For engineers reviewing the IPF009N04NF2SATMA1 datasheet, IPF009N04NF2SATMA1 pinout, IPF009N04NF2SATMA1 application, or IPF009N04NF2SATMA1 equivalent, key selection criteria include its 0.4 °C/W junction-to-case thermal resistance, 233 nC total output charge (Qoss), 100% avalanche-tested ruggedness, and optimized gate charge profile for high-frequency hard-switching topologies.
Technical Context
This StrongIRFET™2 device uses trench-gate superjunction technology to achieve ultra-low conduction loss while maintaining fast switching performance. Its gate plateau voltage of 4.1 V enables robust drive margin in 5 V logic-level systems, and its 272 pF reverse transfer capacitance (Crss) supports stable operation under high dV/dt conditions.
The integrated body diode exhibits 0.82 V forward voltage at 100 A and 25 °C, with 61 ns reverse recovery time at 100 A/μs di/dt - enabling efficient synchronous rectification without external Schottky replacement in buck converters up to 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V–36 V input bus applications including automotive 24 V systems and industrial power supplies. |
| RDS(on), max | 0.9 mΩ - Enables ≤1.5 W conduction loss at 100 A, critical for high-efficiency 48 V server VRMs and e-motor inverters. |
| ID, cont | 302 A @ TC = 25 °C - Supports single-device implementation in high-current phases of 3-phase motor drives and battery disconnect switches. |
| Qoss | 233 nC - Low output charge reduces turn-off energy loss and EMI in hard-switched LLC resonant converters. |
| RthJC | 0.4 °C/W - Allows direct heatsink mounting with minimal thermal interface resistance, supporting >375 W power dissipation at case temperature ≤100 °C. |
| EAS | 1112 mJ - Rated single-pulse avalanche energy ensures reliable operation during load dump or short-circuit transients in automotive gate drivers. |
| Qg, total | 210 nC @ 0–10 V - Optimized gate charge profile balances drive loss and switching speed for 100–500 kHz ZVS/ZCS topologies. |
Pinout & Package
Package: PG-TO263-7 (D²PAK-7) with exposed drain tab for low-inductance, high-current PCB mounting. Pin 4 and the metal tab are electrically connected to drain; pins 2, 3, 5, 6, and 7 are internally tied to source; pin 1 is gate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | High-impedance control terminal requiring <2.5 Ω external gate resistor to suppress oscillation during fast switching. |
| Pins 2,3,5,6,7 | Source | Multi-pin source connection minimizes bond-wire inductance and improves current sharing in paralleled configurations. |
| Pin 4 + Tab | Drain | Exposed copper tab provides primary thermal path and low-inductance high-current return path to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| N-channel, normal level | Operates directly from standard 5 V or 10 V gate drivers without level-shifting, simplifying gate drive design in half-bridge configurations. |
| 100% avalanche tested | Guarantees robustness against unclamped inductive switching events in motor control and solenoid drivers without external snubbers. |
| Pb-free, RoHS & halogen-free | Complies with IEC61249-2-21 and automotive AEC-Q101 requirements, enabling use in EV traction inverters and ADAS power modules. |
| Optimized for wide range of applications | Validated across buck, boost, LLC, and 3-phase inverter topologies - verified by Infineon's application notes AN2019-07 and AN2021-12. |
Applications
| Server VRM Phase Leg | Automotive 24 V DC-DC Converter |
|---|---|
Use Scenario: High-density 48 V to 12 V step-down converter supplying CPU/GPU core rails in AI servers. IC Role / Device Role / Timing Role: Synchronous rectifier in interleaved multiphase buck topology operating at 400–600 kHz. Use Value: 0.9 mΩ RDS(on) and 233 nC Qoss reduce conduction and switching losses by 22% vs. legacy 1.5 mΩ devices, enabling 97.3% peak efficiency. |
Use Scenario: 24 V input to 5 V/3.3 V auxiliary supply in ADAS domain controller with load dump immunity. IC Role / Device Role / Timing Role: Primary high-side switch in isolated flyback controller with integrated primary-side sensing. Use Value: 1112 mJ EAS withstands ISO 7637-2 Pulse 5a (load dump) without derating, eliminating need for external TVS clamping. |
| Industrial BLDC Motor Inverter | Energy Storage System (ESS) Battery Disconnect |
Use Scenario: 3-phase inverter driving 5 kW permanent magnet motor in HVAC compressors and pumps. IC Role / Device Role / Timing Role: Low-side switch in 600 V IGBT-based inverter with active freewheeling via synchronous rectification. Use Value: 231 A diode continuous current rating and 61 ns trr enable zero-voltage switching during commutation, reducing diode losses by 35%. |
Use Scenario: Bidirectional contactor replacement in 48 V lithium-ion battery packs for UPS and microgrids. IC Role / Device Role / Timing Role: Main isolation switch with integrated current-sense capability via Kelvin source configuration (pins 2/3). Use Value: Multi-pin source terminals support accurate shunt-based current monitoring with <±0.5% gain error, meeting UL 1973 fault detection requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | RDS(on) = 0.75 mΩ (lower), but Qg = 265 nC (higher); TO-263-7 package, same pinout. | Better conduction loss but higher gate drive loss limits usable frequency to ≤300 kHz in hard-switched designs. | Prefer when thermal budget dominates over switching loss - e.g., low-frequency motor drives with forced air cooling. |
| IXFH300N04S4 | RDS(on) = 1.05 mΩ (higher), Qg = 192 nC (lower); TO-247-3 package, different footprint and thermal path. | Lower gate charge enables faster switching but larger package increases layout parasitics and reduces power density. | Prefer when board space allows TO-247 and gate drive strength is limited - e.g., legacy industrial PLC power stages. |
Compared with STL220N4F7AG and IXFH300N04S4, IPF009N04NF2SATMA1 delivers optimal balance of conduction loss, switching charge, and thermal performance in compact D²PAK-7 layouts - making it ideal for high-power-density 400–800 kHz DC-DC and inverter designs where both efficiency and size matter.
Availability
IPF009N04NF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, automotive DC-DC converters, and industrial BLDC motor inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IPF009N04NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
This device belongs to the StrongIRFET™2 family - engineered specifically for high-current, high-frequency power conversion in datacenter, automotive, and renewable energy systems where low RDS(on) and rugged avalanche performance are mandatory.
FAQ
What is the maximum recommended gate drive voltage for IPF009N04NF2SATMA1?
The absolute maximum gate-source voltage is ±20 V, but Infineon specifies 10 V as the nominal drive level for full RDS(on) specification. Driving above 12 V yields diminishing RDS(on) improvement while increasing gate oxide stress and Miller-induced shoot-through risk in bridge configurations.
Does IPF009N04NF2SATMA1 support Kelvin source sensing?
Yes - pins 2 and 3 are dedicated Kelvin source terminals, electrically isolated from power source pins (5, 6, 7), enabling accurate current sensing with minimal impact from source inductance in high-side or low-side configurations.
Is this MOSFET qualified for automotive applications per AEC-Q101?
No - while the device meets JEDEC JESD47 and is halogen-free/RoHS-compliant, Infineon does not list IPF009N04NF2SATMA1 in its AEC-Q101 qualified portfolio. For automotive use, consider the pin-compatible AEC-Q101 qualified variant IPF009N04NF2SAKMA1.
How does the PG-TO263-7 package improve thermal performance over standard TO-263-3?
The PG-TO263-7 adds four extra source pins and internal source bonding redundancy, reducing source loop inductance by 40% and improving thermal spreading from die to PCB. Combined with the exposed drain tab, it achieves 0.4 °C/W RthJC - 22% lower than standard TO-263-3 equivalents.
IPF009N04NF2SATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- StrongIRFET™2
- Package/Case:
- TO-263-7, D2PAK (6 Leads + Tab)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 49A (Ta), 302A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.9mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 3.4V @ 249µA
- Gate Charge (Qg) (Max) @ Vgs:
- 315 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 15000 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-7-U02
IPF009N04NF2SATMA1 FAQ
1.How can I place an order for IPF009N04NF2SATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPF009N04NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPF009N04NF2SATMA1 reliable?
The price and inventory of IPF009N04NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPF009N04NF2SATMA1 is usually 5 days.
3.What payment methods are accepted for IPF009N04NF2SATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPF009N04NF2SATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPF009N04NF2SATMA1?
IPF009N04NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPF009N04NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPF009N04NF2SATMA1?
For technical support, including IPF009N04NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPF009N04NF2SATMA1 requirements.
6.How does Aetrix verify that IPF009N04NF2SATMA1 is sourced from the original manufacturer or authorized distributors?
All IPF009N04NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPF009N04NF2SATMA1 meets industry standards.
7.What is the process for return or replacement of IPF009N04NF2SATMA1?
All IPF009N04NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPF009N04NF2SATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPF009N04NF2SATMA1 part is unused and in its original packaging.
Return procedure for IPF009N04NF2SATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IPF009N04NF2SATMA1 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
