Infineon Technologies IPF010N06NF2SATMA1

Overview

IPF010N06NF2SATMA1 from Infineon is a 60 V, 1.05 mΩ N-channel enhancement-mode MOSFET in PG-TO263-7 package, rated for 299 A continuous drain current at T_C = 25 °C and optimized for high-efficiency synchronous rectification and DC-DC power stages in server VRMs and telecom power supplies.

For engineers reviewing the IPF010N06NF2SATMA1 datasheet, IPF010N06NF2SATMA1 pinout, IPF010N06NF2SATMA1 application, or IPF010N06NF2SATMA1 equivalent, key selection criteria include R_DS(on) ≤ 1.05 mΩ at V_GS = 10 V, Q_g = 203 nC, avalanche-rated ruggedness (E_AS = 1274 mJ), and integrated low-loss body diode with t_rr = 57 ns and Q_rr = 73 nC.

Technical Context

This StrongIRFET™2 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) × Q_g figure-of-merit (FoM) of 213 Ω·nC, enabling high-frequency switching up to 1 MHz in hard-switched topologies. Its gate plateau voltage is 4.3 V, supporting robust drive margin with standard 5–10 V gate drivers.

The MOSFET integrates a fast, soft-recovery body diode characterized at I_F = 100 A with V_SD = 0.85 V and reverse recovery charge Q_rr = 73 nC at di/dt = 100 A/μs - critical for minimizing shoot-through losses in synchronous buck converters.

Key Specifications

Pinout & Package

IPF010N06NF2SATMA1 is housed in PG-TO263-7 (D²PAK-7) package with exposed drain tab for enhanced thermal performance. Pin 1 is Gate, Pins 2/3/5/6/7 are Source, and Pin 4 plus the metal tab are Drain terminals - enabling low-inductance, multi-point source connection and high-current drain routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 60 V MOSFET applications.

Compared with IPB011N06N3G and STL220N6F7, IPF010N06NF2SATMA1 offers the best balance of ultra-low R_DS(on), verified avalanche ruggedness, and moderate Q_g, making it optimal for mission-critical 48 V power conversion where both efficiency and reliability are non-negotiable.

Availability

IPF010N06NF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom intermediate bus converters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IPF010N06NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the StrongIRFET™2 family - engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems where thermal performance and avalanche robustness are critical.

FAQ

What is the maximum recommended gate-source voltage for IPF010N06NF2SATMA1?

The absolute maximum V_GS is ±20 V per datasheet Table 2. Operation above ±15 V risks gate oxide degradation; design practice limits drive to 10–12 V for reliable enhancement and safe margin against ringing. The gate threshold voltage V_GS(th) ranges from 2.1 V to 3.3 V, confirming normal-level logic compatibility.

Does IPF010N06NF2SATMA1 require a negative gate turn-off voltage?

No - this N-channel MOSFET does not require negative V_GS for reliable turn-off. Its gate threshold is positive (2.1–3.3 V), and zero-volt gate drive fully blocks conduction. Negative bias is unnecessary unless mitigating Miller-induced false turn-on in very high dV/dt environments (>50 V/ns), which is uncommon in its target applications.

How is thermal performance affected when mounted without a heatsink?

With no heatsink and using only the 40 mm × 40 mm × 1.5 mm FR4 PCB (6 cm² copper), R_thJA = 40 °C/W. At 299 A and 1.05 mΩ, power dissipation reaches ~93 W - raising junction temperature by ~3720 °C above ambient, which is unsustainable. A heatsink or forced airflow is mandatory; the 0.4 °C/W R_thJC assumes direct thermal interface to a heatsink.

Can IPF010N06NF2SATMA1 be paralleled with identical units?

Yes - its positive temperature coefficient of R_DS(on) (see Diagram 6) ensures inherent current sharing across paralleled devices. Layout must match source inductance and gate loop symmetry; use Kelvin source connections and individual gate resistors (≥2.2 Ω) to suppress oscillation. Derate total current by 10 % for thermal margin in multi-unit configurations.