Infineon Technologies IPF012N06NF2SATMA1

Overview

IPF012N06NF2SATMA1 from Infineon is an N-channel enhancement-mode MOSFET in PG-TO263-7 package, rated for 60 V drain-source voltage, 1.2 mΩ typical R_DS(on) at V_GS = 10 V, and 288 A continuous drain current. It serves as a high-current synchronous rectifier or main switch in DC-DC converters and motor drives operating up to 175 °C junction temperature.

For engineers reviewing the IPF012N06NF2SATMA1 datasheet, IPF012N06NF2SATMA1 pinout, IPF012N06NF2SATMA1 application, or IPF012N06NF2SATMA1 equivalent, key selection criteria include its 155 nC total gate charge, 0.51 °C/W junction-to-case thermal resistance, avalanche-rated ruggedness (727 mJ), and RoHS/halogen-free compliance for industrial power systems.

Technical Context

This StrongIRFET™2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-frequency hard-switched topologies. Its 7-pin TO263 package integrates multiple source terminals (Pins 2,3,5,6,7) and a thermally enhanced drain tab to support >200 A pulsed operation with minimal parasitic inductance.

The MOSFET features a gate threshold voltage of 2.1–3.3 V, 10500 pF input capacitance at V_DS = 30 V, and a 4.4 V gate plateau voltage-enabling precise timing control in synchronous buck stages. Its body diode exhibits 0.86 V forward voltage at 100 A and 51 ns reverse recovery time under dI/dt = 100 A/μs.

Key Specifications

Pinout & Package

Package: PG-TO263-7 (D²PAK-7) with exposed drain tab (Pin 4 + metal tab) for low-inductance, high-current drain connection and thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 60 V MOSFET applications.

Compared with STL220N6F7 and IXFH180N60X3, IPF012N06NF2SATMA1 delivers the lowest R_DS(on) × Q_g FoM (186 mΩ·nC), enabling highest efficiency in space-constrained, high-frequency power stages where thermal management is critical.

Availability

IPF012N06NF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial BLDC inverters, and automotive on-board chargers requiring stable component supply and long-term production continuity.

Supply support for IPF012N06NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the StrongIRFET™2 family, engineered specifically for high-efficiency, high-current power conversion in datacenter, industrial, and e-mobility applications where low R_DS(on) and rugged avalanche performance are mandatory.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies T_C = 175 °C as the absolute maximum case temperature. At this temperature, the device supports 221 A continuous drain current (derated from 288 A at 25 °C). Thermal design must ensure the case does not exceed this limit under worst-case ambient and airflow conditions.

Does the IPF012N06NF2SATMA1 require a negative gate voltage for reliable turn-off?

No. The gate threshold voltage range is 2.1–3.3 V, and the maximum gate-source voltage is ±20 V. A 0 V gate drive fully turns off the device; applying negative voltage is unnecessary and not recommended unless required by specific gate driver architecture.

Can this MOSFET be used in paralleled configurations?

Yes-the five-source-terminal layout and positive temperature coefficient of R_DS(on) support current sharing. However, matched gate drive loop inductance and symmetrical PCB layout are essential; the datasheet recommends ≤100 pF gate-to-source mismatch between paralleled units for stable operation.

Is the drain tab electrically isolated from the PCB mounting surface?

No. The drain tab is internally connected to Pin 4 and forms the primary drain terminal. When mounted to a heatsink, it must be electrically insulated from the PCB ground plane using a thermally conductive but electrically isolating pad or washer to prevent short circuits.