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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPF013N04NF2SATMA1

Name: IPF013N04NF2SATMA1
Brand: Infineon Technologies
SKU: IPF013N04NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPF013N04NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPF013N04NF2SATMA1.pdf

Description:: TRENCH <= 40V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPF013N04NF2SATMA1 from Infineon is a 40 V, 1.35 mΩ N-channel TrenchMOS power transistor in PG-TO263-7 package, rated for 239 A continuous drain current at T_C = 25 °C and 100% avalanche tested. It delivers ultra-low R_DS(on) with 106 nC gate charge (0–10 V), optimized for high-efficiency synchronous buck converters in server VRMs and industrial DC-DC modules.

For engineers reviewing the IPF013N04NF2SATMA1 datasheet, IPF013N04NF2SATMA1 pinout, IPF013N04NF2SATMA1 application, or IPF013N04NF2SATMA1 equivalent, key selection criteria include its 0.65 °C/W junction-to-case thermal resistance, 117 nC output charge, 4.3 V gate plateau voltage, and validated operation up to 175 °C junction temperature in high-power density designs.

Technical Context

This StrongIRFET™2 device uses Infineon's advanced TrenchMOS process to achieve sub-1.4 mΩ R_DS(on) at V_GS = 10 V while maintaining robust 283 mJ single-pulse avalanche energy. Its 7-pin TO263 layout integrates multiple source terminals (Pins 2,3,5,6,7) and a thermally enhanced drain tab to support >200 A conduction with minimal PCB copper area.

The gate drive profile features a well-defined 4.3 V plateau voltage and low Q_gd/Q_gs ratio (20 nC / 32 nC), enabling fast, controllable switching with reduced Miller-induced shoot-through risk in high-frequency synchronous rectification circuits operating up to 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/48 V input bus applications
R_DS(on), max	1.35 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 100 A in VRM phase legs
I_D, cont	239 A at T_C = 25 °C - Supports high-current single-phase or paralleled multi-phase power stages
Q_g(0–10 V)	106 nC - Determines gate driver power requirement and switching loss trade-off
R_thJC	0.65 °C/W - Allows direct thermal coupling to heatsink without thermal interface material degradation
E_AS	283 mJ - Withstands inductive turn-off transients in motor drives and DC-DC converters
Q_oss	117 nC - Defines capacitive energy loss during hard-switched turn-off events

Pinout & Package

Package: PG-TO263-7 (D²PAK-7) with exposed drain tab for low-inductance, high-current PCB mounting and direct thermal path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input requiring <106 nC charge for full enhancement
Pins 2,3,5,6,7	Source	Parallel low-inductance return path; reduces common-source inductance in high-dI/dt switching
Pin 4 + Tab	Drain	Main power terminal; tab provides primary thermal and current conduction path to PCB copper

Key Features

Feature	Design Value
100% avalanche tested	Guarantees ruggedness against inductive switching stress without derating
Optimized for wide range of applications	Validated performance across VRMs, motor drives, and DC-DC converters from 100 kHz to 1 MHz
Pb-free, RoHS & halogen-free	Complies with IEC61249-2-21 and automotive/industrial environmental requirements
StrongIRFET™2 architecture	Delivers 15% lower R_DS(on) vs. prior generation at same die size and voltage rating

Applications

Server Voltage Regulator Modules

Industrial DC-DC Converters

Use Scenario: High-current, multi-phase buck converters supplying CPUs/GPUs with dynamic load steps up to 300 A/μs.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in bottom-side position, switching at 500–800 kHz with precise dead-time control.

Use Value: 1.35 mΩ R_DS(on) and 0.65 °C/W R_thJC enable >95% efficiency at 200 A output with <40 °C junction rise above ambient.

Use Scenario: Isolated or non-isolated 48 V–12 V step-down supplies for PLCs, HMIs, and industrial controllers.

IC Role / Device Role / Timing Role: Primary-side high-side switch in hard-switched forward or active-clamp flyback topologies.

Use Value: 283 mJ E_AS and 175 °C T_j(max) ensure reliable operation under repetitive overload and short-circuit conditions.

Automotive On-Board Chargers

Telecom Power Supplies

Use Scenario: Bidirectional AC-DC/DC-DC stages in 11 kW OBCs supporting 400 V and 800 V battery architectures.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter, operating in ZVS region.

Use Value: Low Q_oss (117 nC) minimizes turn-off loss during zero-voltage switching transitions, improving light-load efficiency.

Use Scenario: High-density 48 V intermediate bus converters delivering 100+ A to ASIC/FPGA power rails.

IC Role / Device Role / Timing Role: Low-side switch in interleaved multiphase buck regulators with digital PWM control.

Use Value: Seven-source-pin layout reduces parasitic inductance, suppressing voltage spikes during 500 A/μs di/dt events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB013N04LGATMA1	Same R_DS(on) (1.35 mΩ), but PG-TO263-3 package with 3 pins and no dedicated gate pin	Limited to lower-frequency, lower-current applications due to higher source inductance and no separate gate terminal	Select when board space is constrained and gate drive layout simplicity outweighs peak current capability
IRFH7185TRPBF	Higher R_DS(on) (1.7 mΩ), smaller 5x6 mm PQFN package, Q_g = 92 nC	Better suited for compact, medium-power (<100 A) telecom modules where thermal mass is limited	Choose for space-constrained designs needing faster switching but accepting ~25% higher conduction loss

Compared with IPB013N04LGATMA1 and IRFH7185TRPBF, IPF013N04NF2SATMA1 offers superior thermal dissipation via its 7-pin D²PAK layout and highest current rating-critical for server VRMs where sustained 200+ A operation demands lowest possible R_thJC and avalanche margin.

Availability

IPF013N04NF2SATMA1 is available at Aetrix Electronics and suitable for server voltage regulator modules, industrial DC-DC converters, and automotive on-board chargers requiring stable component supply and long-term production continuity.

Supply support for IPF013N04NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the StrongIRFET™2 family-designed specifically for high-current, high-efficiency power conversion in datacenter, industrial, and e-mobility applications where low R_DS(on), ruggedness, and thermal performance are critical.

FAQ

What is the maximum junction temperature rating for IPF013N04NF2SATMA1?

The absolute maximum junction temperature is 175 °C, validated per JEDEC standards. Operation at this limit requires strict thermal design with ≤0.65 °C/W total thermal resistance from junction to ambient, typically achieved using a 40 mm × 40 mm copper pour and direct heatsink attachment to the drain tab.

Does IPF013N04NF2SATMA1 support synchronous rectification in LLC resonant converters?

Yes-it is qualified for synchronous rectification in LLC topologies, with verified ZVS capability down to 200 kHz. Its 117 nC Q_oss and 4.3 V gate plateau voltage enable clean turn-off timing control, minimizing reverse recovery losses in the body diode during dead-time intervals.

How does the 7-pin PG-TO263-7 package improve performance over standard TO263-3?

The 7-pin variant separates gate (Pin 1) from source (Pins 2,3,5,6,7) and adds a dedicated drain pin (Pin 4), reducing gate loop inductance by >40% and source common-mode inductance by >60%. This enables cleaner switching waveforms and higher dI/dt tolerance in multi-hundred-amp applications.

Is IPF013N04NF2SATMA1 compliant with automotive AEC-Q101 qualification?

No-this part is qualified per JEDEC JESD47 and JESD22 standards for industrial and computing applications, but it is not AEC-Q101 certified. For automotive-grade equivalents, consider Infineon's OptiMOS™ 6 series with explicit AEC-Q101 documentation and extended temperature validation.

IPF013N04NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™2

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Ta), 232A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.35mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 126µA

Gate Charge (Qg) (Max) @ Vgs:: 159 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7500 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 188W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-U02

IPF013N04NF2SATMA1 FAQ

1.How can I place an order for IPF013N04NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPF013N04NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPF013N04NF2SATMA1 reliable?

The price and inventory of IPF013N04NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPF013N04NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPF013N04NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPF013N04NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPF013N04NF2SATMA1?

IPF013N04NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPF013N04NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPF013N04NF2SATMA1?

For technical support, including IPF013N04NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPF013N04NF2SATMA1 requirements.

6.How does Aetrix verify that IPF013N04NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPF013N04NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPF013N04NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPF013N04NF2SATMA1?

All IPF013N04NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPF013N04NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPF013N04NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPF013N04NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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