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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPF016N06NF2SATMA1

Name: IPF016N06NF2SATMA1
Brand: Infineon Technologies
SKU: IPF016N06NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPF016N06NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPF016N06NF2SATMA1.pdf

Description:: TRENCH 40<-<100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPF016N06NF2SATMA1 from Infineon is a 60 V, 1.65 mΩ N-channel enhancement-mode MOSFET in PG-TO263-7 package, rated for 230 A continuous drain current at T_C = 25 °C and 177 A at 100 °C. It features 108 nC total gate charge, 0.65 °C/W junction-to-case thermal resistance, and is 100% avalanche tested - deployed in high-current synchronous buck converters and motor drive half-bridges.

For engineers reviewing the IPF016N06NF2SATMA1 datasheet, IPF016N06NF2SATMA1 pinout, IPF016N06NF2SATMA1 application, or IPF016N06NF2SATMA1 equivalent, key selection criteria include R_DS(on) at 100 A, Q_g vs. switching loss trade-off, thermal performance under forced convection, and source-connected multi-pin layout for low-inductance high-side/low-side configurations.

Technical Context

This StrongIRFET™2 device uses trench-gate superjunction technology optimized for low R_DS(on) × Q_g figure-of-merit in hard-switched and synchronous rectification topologies. Its 7-pin TO263 variant integrates four parallel source terminals (Pins 2,3,5,6) plus one drain tab to minimize package inductance and improve current sharing.

The MOSFET exhibits a gate threshold voltage of 2.1–3.3 V, plateau voltage of 4.5 V, and reverse diode with t_rr = 33 ns (dI/dt = 500 A/μs), enabling fast commutation in DC-DC and BLDC inverters without external Schottky clamping.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage before avalanche onset; supports 48 V bus systems with 20 % margin.
R_DS(on) max	1.65 mΩ @ V_GS = 10 V, I_D = 100 A - Enables <1.7 W conduction loss at 100 A, critical for >98 % efficiency in 1 kW converters.
I_D cont	230 A @ T_C = 25 °C - Requires ≥6 cm² copper pour on FR4 PCB for thermal management per datasheet test condition.
Q_g total	108 nC @ V_GS = 0–10 V - Dictates gate driver power requirement (~1.1 mJ per switch cycle at 100 kHz).
t_r/t_f	31 ns / 17 ns @ V_DD = 30 V, I_D = 100 A - Supports ≤500 kHz hard-switching with controlled dV/dt and EMI.
Z_thJC	0.65 °C/W - Enables junction temperature rise of only 150 °C at 230 W dissipation, allowing operation up to T_j = 175 °C.
V_GS(th)	2.1–3.3 V - Ensures robust turn-on with standard 3.3 V or 5 V logic-level gate drivers without level-shifting.

Pinout & Package

Package: PG-TO263-7 (D²PAK-7), surface-mount, isolated drain tab (Pin 4 + metal tab), RoHS-compliant lead plating, halogen-free per IEC61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Single-point gate connection; low-inductance routing required to minimize ringing during fast switching.
Pins 2,3,5,6	Source	Four parallel source terminals reduce source inductance and improve current distribution in high-di/dt applications.
Pin 4 + Tab	Drain	Drain connected to exposed copper tab; primary heat path to PCB; must be soldered to ≥6 cm² thermal pad.
Pin 7	Source	Additional source terminal for Kelvin sensing or auxiliary return path in precision current monitoring designs.

Key Features

Feature	Design Value
100 % avalanche tested	Guarantees single-pulse avalanche energy rating of 349 mJ (I_D = 100 A, R_L = 25 Ω), eliminating need for external snubbers in inductive load switching.
Optimized R_DS(on) × Q_g	1.65 mΩ × 108 nC = 178 mΩ·nC FoM - balances conduction and switching losses for 200–500 kHz synchronous rectifiers.
Multi-source pin configuration	Five-source-terminal layout (Pins 2,3,5,6,7) lowers effective source inductance below 0.5 nH, suppressing shoot-through risk in half-bridge layouts.
Low reverse recovery charge	Q_rr = 164 nC @ dI/dt = 500 A/μs - reduces body diode switching loss and cross-conduction in synchronous FET operation.

Applications

Server VRM Power Stage

Industrial Motor Drive Inverter

Use Scenario: High-density 48 V input, 0.8 V/300 A output multiphase buck converter for AI accelerator cards.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved phase-leg, operating at 400–600 kHz with zero-voltage switching assist.

Use Value: 1.65 mΩ R_DS(on) limits conduction loss to <1.5 W per phase; multi-pin source minimizes loop inductance for <10 ns dead-time control.

Use Scenario: 3-phase 400 V AC-fed inverter driving 7.5 kW PMSM in CNC spindle control.

IC Role / Device Role / Timing Role: High-current low-side switch in IGBT/MOSFET hybrid bridge, handling 181 A continuous diode conduction during regeneration.

Use Value: 181 A diode forward current rating and 33 ns t_rr enable efficient regenerative braking without external freewheeling diodes.

Telecom 48 V DC-DC Brick

Onboard Charger (OBC) Primary Switch

Use Scenario: Isolated full-bridge DC-DC converter (48 V → 12 V/100 A) for 5G base station power shelves.

IC Role / Device Role / Timing Role: Primary-side active clamp switch, conducting 230 A peak current during ZVS transitions.

Use Value: 0.65 °C/W R_thJC sustains 150 °C junction temperature under 400 W peak dissipation; 920 A pulsed rating accommodates transient overload.

Use Scenario: 6.6 kW bidirectional OBC using dual-active-bridge topology with 600 V DC link.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant stage, operating at 200–350 kHz with 100 A RMS current.

Use Value: 108 nC Q_g enables use of low-power gate drivers (e.g., 1EDN7512B); 100% avalanche rating protects against transformer leakage spike failures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB016N06N3 G	R_DS(on) = 1.6 mΩ (typ), Q_g = 102 nC, PG-TO263-7, same V_DS, but lower avalanche energy (290 mJ) and no Pin 7 source terminal.	Lacks dedicated Kelvin source (Pin 7); less suitable for current-sense accuracy in closed-loop motor control.	Prefer when cost sensitivity outweighs need for precise source sensing or highest avalanche margin.
STL220N6F7	R_DS(on) = 1.7 mΩ (max), Q_g = 115 nC, H2PAK-7 package, higher R_thJA (45 °C/W), no 100 % avalanche test certification.	Higher thermal resistance requires larger PCB copper area; unverified avalanche ruggedness increases design margin overhead.	Select only if Infineon supply constraints exist and system-level testing confirms robustness under worst-case inductive switching.

Compared with IPB016N06N3G and STL220N6F7, IPF016N06NF2SATMA1 delivers superior avalanche immunity, lower gate charge, and a dedicated Kelvin source pin - making it optimal for safety-critical industrial drives and high-reliability telecom power where failure modes must be tightly bounded.

Availability

IPF016N06NF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom DC-DC bricks requiring stable component supply, long-term lifecycle support, and traceable sourcing for high-volume production.

Supply support for IPF016N06NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certifications including ISO/TS 16949 and AEC-Q101.

This part belongs to the StrongIRFET™2 family - engineered specifically for high-efficiency, high-current power conversion in datacenter, industrial, and renewable energy systems where low R_DS(on) and rugged switching behavior are mandatory.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies T_C = 175 °C as the absolute maximum case temperature. At this temperature, the continuous drain current derates to 177 A (V_GS = 10 V). Operation above this limit risks irreversible bond-wire failure and is prohibited even for short durations.

Does Pin 7 provide a Kelvin source connection?

Yes - Pin 7 is an isolated source terminal intended for Kelvin sensing or separate return path routing. It is electrically identical to Pins 2,3,5,6 but physically separated to avoid current-induced voltage drop interference in precision current measurement circuits.

Is the drain tab electrically isolated from all pins?

No - the drain tab is internally connected to Pin 4 and forms the primary drain terminal. It must be soldered to a PCB copper pour designated as the high-current drain net; isolation from other nets is mandatory to prevent short circuits.

Can this MOSFET replace older StrongIRFET™1 devices in existing designs?

Yes, with validation - IPF016N06NF2SATMA1 offers identical pinout and improved R_DS(on), Q_g, and avalanche rating over IPB020N06N (StrongIRFET™1). However, gate drive timing and PCB thermal layout must be re-verified due to higher peak current capability and faster switching edges.

IPF016N06NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™2

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Ta), 223A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.3V @ 129µA

Gate Charge (Qg) (Max) @ Vgs:: 162 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7300 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 188W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-U02

IPF016N06NF2SATMA1 FAQ

1.How can I place an order for IPF016N06NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPF016N06NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPF016N06NF2SATMA1 reliable?

The price and inventory of IPF016N06NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPF016N06NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPF016N06NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPF016N06NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPF016N06NF2SATMA1?

IPF016N06NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPF016N06NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPF016N06NF2SATMA1?

For technical support, including IPF016N06NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPF016N06NF2SATMA1 requirements.

6.How does Aetrix verify that IPF016N06NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPF016N06NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPF016N06NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPF016N06NF2SATMA1?

All IPF016N06NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPF016N06NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPF016N06NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPF016N06NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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