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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPF017N08NF2SATMA1

Name: IPF017N08NF2SATMA1
Brand: Infineon Technologies
SKU: IPF017N08NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPF017N08NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IPF017N08NF2SATMA1.pdf

Description:: TRENCH 40<-<100V PG-TO263-7

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Product details

Overview

IPF017N08NF2SATMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO263-7 package, rated for 80 V V_DS, 1.7 mΩ R_DS(on) max at V_GS = 10 V, and 259 A continuous drain current at T_C = 25 °C. It features 100% avalanche tested ruggedness, low Q_g (124 nC), and integrated Schottky-like body diode with 285 nC Q_rr, targeting high-efficiency synchronous rectification in DC-DC converters.

For engineers reviewing the IPF017N08NF2SATMA1 datasheet, IPF017N08NF2SATMA1 pinout, IPF017N08NF2SATMA1 application, or IPF017N08NF2SATMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, gate charge profile for hard-switched ZVS/ZCS topologies, safe operating area under pulsed load conditions, and thermal resistance (R_thJC = 0.6 °C/W) for high-power board-level thermal design.

Technical Context

This StrongIRFET™ 2 device uses trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching performance: t_d(on) = 21 ns, t_f = 26 ns, and C_iss = 8700 pF at V_DS = 40 V. Its gate plateau voltage of 4.6 V enables robust drive margin in 5 V and 3.3 V logic-level systems.

The MOSFET integrates a low-V_SD (0.87 V typ. at I_F = 100 A, T_j = 25 °C) reverse diode optimized for synchronous rectification, with trr = 44 ns and Q_rr = 285 nC - critical for minimizing commutation losses in buck and LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V input bus applications with 20 % safety margin
R_DS(on), max	1.7 mΩ at V_GS = 10 V, I_D = 100 A - Enables <1.7 W conduction loss at 100 A, reducing heatsink requirements
I_D, cont	259 A at T_C = 25 °C - Supports high-current output stages in server VRMs and telecom power supplies
Q_g	124 nC - Low gate charge allows efficient driving with standard gate drivers (e.g., 1EDN7512B) at >500 kHz
E_AS	593 mJ - Confirmed single-pulse avalanche energy supports unclamped inductive switching in motor drives
R_thJC	0.6 °C/W - Enables direct thermal coupling to heatsink via exposed drain tab, critical for >200 W dissipation
Q_rr	285 nC - Quantified reverse recovery charge used to calculate diode turn-off loss in synchronous rectifiers

Pinout & Package

IPF017N08NF2SATMA1 is housed in PG-TO263-7 (D²PAK-7) package with exposed drain tab for enhanced thermal performance. The drain connects directly to the copper pad on the PCB, enabling low-inductance, high-current paths.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control terminal; requires ≤10 Ω series gate resistor to damp ringing during fast switching
Pins 2, 3, 5, 6, 7	Source	Common return path for source current; multiple pins reduce bondwire inductance and improve current sharing
Pin 4 + Tab	Drain	Main power output node; tab must be soldered to large copper pour for thermal and electrical integrity

Key Features

Feature	Design Value
StrongIRFET™ 2 trench-superjunction architecture	Delivers 1.7 mΩ R_DS(on) in D²PAK-7 without sacrificing dv/dt immunity or ESD robustness
100 % avalanche tested	Guarantees operation under unclamped inductive switching up to 593 mJ, eliminating need for external snubbers
Low Q_gd/Q_g ratio (26/124 nC)	Improves Miller immunity and reduces risk of false turn-on in high-side configurations
Halogen-free & RoHS-compliant plating	Meets IPC-J-STD-609A Class 1 halogen content limits (<900 ppm Cl, <900 ppm Br) for industrial and automotive use
Optimized body diode for sync. rectification	Q_rr = 285 nC and trr = 44 ns enable efficient zero-voltage switching in secondary-side FETs of isolated DC-DC converters

Applications

Server VRM Output Stage

Telecom 48 V Intermediate Bus Converter

Use Scenario: High-current, high-frequency buck converter delivering 50–100 A at 0.8–1.2 V to CPU/GPU cores.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck stage, switching at 500–1000 kHz with precise gate timing.

Use Value: 1.7 mΩ R_DS(on) minimizes conduction loss; low Q_g enables clean 100 ns-scale dead-time control without shoot-through risk.

Use Scenario: 48 V-to-12 V isolated DC-DC module for base station power distribution.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant topology, driven by transformer-coupled gate signals.

Use Value: 285 nC Q_rr and 44 ns trr reduce reverse recovery loss by >35 % vs. standard MOSFETs, improving full-load efficiency to >96 %.

Industrial Motor Drive Inverter Leg

Onboard Charger (OBC) DC-Link Switch

Use Scenario: 3-phase inverter leg switching 20–50 A motor currents at 8–20 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side and low-side switch in IGBT/MOSFET hybrid or all-MOSFET inverter stage.

Use Value: 593 mJ E_AS rating ensures reliable operation during short-circuit events without desaturation protection circuitry.

Use Scenario: Bidirectional DC-link switch in 6.6 kW OBC handling 400–800 V battery interface.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element in active front-end or DC-DC isolation stage.

Use Value: 80 V V_DS with 1.7 mΩ R_DS(on) supports 400 V nominal bus with low conduction loss and minimal thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N8F7AG	R_DS(on) = 1.8 mΩ (V_GS = 10 V), Q_g = 132 nC, PG-TO263-7 package, no avalanche rating specified	Lacks JEDEC-qualified avalanche testing; higher Q_g increases driver loss in >600 kHz designs	Preferable where cost sensitivity outweighs ruggedness requirements and switching frequency remains <400 kHz
IXFH50N80X3	R_DS(on) = 22 mΩ (V_GS = 10 V), TO-247-3 package, 800 V rating, Q_g = 145 nC	Higher voltage rating but 13× higher R_DS(on); unsuitable for high-current, low-voltage applications	Only viable for 400–800 V bus systems requiring lower current density and larger heatsinking

Compared with STL220N8F7AG and IXFH50N80X3, IPF017N08NF2SATMA1 delivers superior conduction efficiency at high current, verified avalanche ruggedness for fault tolerance, and optimized gate charge for high-frequency synchronous rectification - making it uniquely suited for 48 V–60 V intermediate bus and VRM applications demanding both power density and reliability.

Availability

IPF017N08NF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for IPF017N08NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the StrongIRFET™ 2 power transistor family, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems where low R_DS(on), low Q_g, and avalanche ruggedness are mandatory.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V per datasheet Table 2. For long-term reliability, gate drive should be limited to 12 V maximum, as higher voltages accelerate gate oxide stress and increase leakage. The gate threshold voltage (V_GS(th)) ranges from 2.2 V to 3.8 V, and full enhancement occurs at ≥6 V - so 10 V is optimal for minimizing R_DS(on) while preserving margin.

Can IPF017N08NF2SATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (confirmed in Diagram 9) ensures inherent current sharing across paralleled devices. Thermal coupling via shared heatsink and matched gate drive layout (equal trace length/resistance) is required. Derate total current by 15 % versus sum of individual ratings to account for thermal and parametric mismatch.

Does this MOSFET require a negative gate turn-off voltage?

No - the device has no requirement for negative V_GS during turn-off. Its gate threshold is well-defined (2.2–3.8 V), and Miller plateau ends at ~4.6 V (Table 6). A 0 V turn-off is sufficient; adding negative voltage offers no benefit and risks exceeding the -20 V V_GS limit if overshoot occurs.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = 0.87 V (typ.) at 100 A and T_j = 25 °C - higher than a 0.45 V Schottky - but its Q_rr = 285 nC and trr = 44 ns are significantly lower than standard silicon diodes. In synchronous rectification, it outperforms standard diodes and approaches Schottky efficiency when driven with precise zero-voltage switching timing.

IPF017N08NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 259A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 194µA

Gate Charge (Qg) (Max) @ Vgs:: 186 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8700 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-14

IPF017N08NF2SATMA1 FAQ

1.How can I place an order for IPF017N08NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPF017N08NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPF017N08NF2SATMA1 reliable?

The price and inventory of IPF017N08NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPF017N08NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPF017N08NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPF017N08NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPF017N08NF2SATMA1?

IPF017N08NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPF017N08NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPF017N08NF2SATMA1?

For technical support, including IPF017N08NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPF017N08NF2SATMA1 requirements.

6.How does Aetrix verify that IPF017N08NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPF017N08NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPF017N08NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPF017N08NF2SATMA1?

All IPF017N08NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPF017N08NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPF017N08NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPF017N08NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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