Infineon Technologies IPF021N13NM6ATMA1

Overview

IPF021N13NM6ATMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO263-7 package, rated for 135 V V_DS, 2.1 mΩ R_DS(on) max at V_GS = 10 V, and 250 A continuous drain current at T_C = 25 °C. It features ultra-low Q_g (160 nC), low Q_rr (168 nC), and 100% avalanche tested operation up to 175 °C - optimized for high-efficiency motor drives and battery-powered inverters.

For engineers reviewing the IPF021N13NM6ATMA1 datasheet, IPF021N13NM6ATMA1 pinout, IPF021N13NM6ATMA1 application, or IPF021N13NM6ATMA1 equivalent, key selection criteria include its 2.1 mΩ on-resistance at 100 A/10 V, gate charge × R_DS(on) figure-of-merit, reverse recovery performance under 500 A/µs di/dt, and thermal robustness in high-power switching topologies.

Technical Context

This OptiMOSTM 6 device employs trench-gate superjunction architecture to achieve simultaneous low conduction loss (R_DS(on) = 2.1 mΩ) and fast switching (t_d(off) = 56 ns, Q_gd = 45 nC). Its integrated body diode delivers low V_SD (0.86 V typ. at 100 A) and controlled Q_rr (168 nC), enabling reliable synchronous rectification and hard-switched half-bridge operation.

The MOSFET supports gate drive voltages from 5 V to 15 V, with V_GS(th) tightly distributed between 2.5–3.5 V and minimal temperature drift. Thermal design leverages a low R_thJC of 0.4 °C/W and MSL 1 rating, allowing direct mounting on PCB copper areas ≥6 cm² without derating in industrial ambient conditions.

Key Specifications

Pinout & Package

IPF021N13NM6ATMA1 uses the PG-TO263-7 (D²PAK-7) thermally enhanced surface-mount package with exposed drain tab for direct thermal coupling. The package includes 7 terminals: Gate (Pin 1), Source (Pins 2,3,5,6,7), and Drain (Pin 4 + metal tab).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with STL220N10F7 and IXFH42N130X3, IPF021N13NM6ATMA1 delivers superior efficiency in 135 V-class battery systems due to its combination of lowest R_DS(on), lowest Q_rr, and smallest thermal resistance - making it optimal for space-constrained, high-power-density motor drives.

Availability

IPF021N13NM6ATMA1 is available at Aetrix Electronics and suitable for motor drive inverters, battery-powered power tools, industrial UPS systems, and electric bicycle controllers requiring stable component supply across multi-year production cycles.

Supply support for IPF021N13NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This device belongs to the OptiMOSTM 6 family - engineered specifically for high-efficiency, high-current switching in battery-powered and industrial motor control applications where low R_DS(on), fast switching, and ruggedness are critical.

FAQ

What is the maximum recommended gate drive voltage for IPF021N13NM6ATMA1?

The absolute maximum gate-source voltage is ±20 V, but Infineon specifies optimal switching performance at V_GS = 10–15 V. Driving above 15 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and ESD risk. For robust operation in noisy environments, 12 V is the recommended nominal gate drive level.

Does IPF021N13NM6ATMA1 require a negative gate voltage for safe turn-off in high-dV/dt applications?

No. Its V_GS(th) range (2.5–3.5 V) and low Miller capacitance (C_rss = 28–49 pF) enable reliable turn-off with 0 V gate drive. However, applying –5 V enhances noise immunity in >100 V/ns dV/dt environments such as three-phase inverter bridges - though not required for basic functionality.

Can IPF021N13NM6ATMA1 be paralleled without current-sharing resistors?

Yes - its positive R_DS(on) temperature coefficient (R_DS(on) increases with junction temperature) enables inherent current balancing. Parallel operation requires matched layout symmetry, identical gate drive routing, and shared thermal mass. Derating to 80% of total rated current per device is recommended for long-term reliability.

Is the drain tab electrically isolated from the PCB copper in PG-TO263-7 mounting?

No - the exposed drain tab is electrically connected to Pin 4 and must be soldered directly to a large copper pour serving as both current return path and thermal interface. Electrical isolation requires insulating thermal pads or ceramic substrates, which increase R_thJC by ≥0.2 °C/W and are not recommended unless mandated by safety standards.