Infineon Technologies IPF023N08NF2SATMA1

Overview

IPF023N08NF2SATMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO263-7 package, rated for 80 V V_DS, 2.3 mΩ R_DS(on) max at V_GS = 10 V, and 209 A continuous drain current at T_C = 25 °C. It features 100% avalanche-tested ruggedness, low Q_g (89 nC), and integrated Schottky-like body diode with 39 ns t_rr, optimized for high-efficiency synchronous rectification in DC-DC converters.

For engineers reviewing the IPF023N08NF2SATMA1 datasheet, IPF023N08NF2SATMA1 pinout, IPF023N08NF2SATMA1 application, or IPF023N08NF2SATMA1 equivalent, key selection criteria include its ultra-low R_DS(on), fast switching (t_d(off) = 42 ns), thermal resistance (R_thJC = 0.7 °C/W), and TO263-7 drain-tab layout for high-current PCB conduction paths.

Technical Context

This device belongs to Infineon's StrongIRFET™ 2 family, engineered for high-power density switching in hard-switched and synchronous rectifier topologies. Its gate threshold voltage (V_GS(th) = 2.2–3.8 V) supports standard 10 V gate drive, while low C_iss (6200 pF) and C_oss (1000 pF) minimize switching losses under 40 V bus conditions.

The MOSFET integrates a robust body diode with Q_rr = 242 nC and t_rr = 39 ns, enabling reliable operation in bidirectional current paths without external anti-parallel diodes. Thermal design is supported by a dedicated drain-connected tab (Pin 4 + metal tab) and validated JEDEC qualification per JESD47.

Key Specifications

Pinout & Package

Package: PG-TO263-7 (D²PAK-7), surface-mount, with exposed drain pad (tab) for thermal and electrical connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with STL220N8F7AG and IXFH210N08X3, IPF023N08NF2SATMA1 delivers optimal balance of ultra-low on-resistance, fast body diode recovery, and surface-mount thermal performance-making it ideal for space-constrained, high-frequency, high-current DC-DC and motor drive designs where thermal management and EMI control are critical.

Availability

IPF023N08NF2SATMA1 is available at Aetrix Electronics and suitable for server voltage regulator modules, industrial motor drive inverters, and telecom intermediate bus converters requiring stable component supply and long-term production continuity.

Supply support for IPF023N08NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D infrastructure.

This part belongs to the StrongIRFET™ 2 Power-Transistor product line, designed specifically for high-efficiency, high-current switching in datacenter power supplies, industrial motor controls, and renewable energy inverters.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V, but Infineon specifies 10 V as the nominal gate drive for full R_DS(on) optimization. Operating above 15 V risks accelerated gate oxide degradation; below 6 V results in incomplete turn-on and elevated conduction loss. For robustness in noisy environments, a 12 V gate drive with active clamping is commonly used.

Can IPF023N08NF2SATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (verified in Diagram 9) ensures inherent current sharing. Successful parallel operation requires matched gate drive loops, symmetrical PCB layout, and thermal coupling via shared heatsink. Derating to 180 A per device is recommended for >5-unit arrays to manage thermal imbalance.

Is the drain tab electrically isolated from the PCB mounting plane?

No-the drain tab is internally connected to Pin 4 and forms the primary drain terminal. When mounted on a heatsink, the tab must be electrically insulated using a thermally conductive but electrically isolating pad (e.g., ceramic or silicone-based). Direct metal-to-metal contact with grounded heatsinks creates a short circuit unless the drain node is referenced to system ground.

Does this MOSFET require external gate resistors for stability?

Yes-datasheet-recommended gate resistance is 1.6 Ω (external) for 100 A switching tests. Lower values (<1 Ω) risk gate ringing and overshoot; higher values (>5 Ω) increase switching time and losses. Layout-dependent parasitic inductance makes empirical tuning essential-especially in high-di/dt applications like motor drives.