Infineon Technologies IPF024N10NF2SATMA1

Overview

IPF024N10NF2SATMA1 from Infineon Technologies is a 100 V, 2.4 mΩ N-channel Trench MOSFET in PG-TO263-7 package with tab-drain configuration, rated for 227 A continuous drain current at TC=25 °C and optimized for high-efficiency synchronous rectification and DC-DC power stages in server PSUs and telecom power supplies.

For engineers reviewing the IPF024N10NF2SATMA1 datasheet, IPF024N10NF2SATMA1 pinout, IPF024N10NF2SATMA1 application, or IPF024N10NF2SATMA1 equivalent, key selection criteria include R_DS(on) ≤ 2.5 mΩ at V_GS=10 V, Q_g=103 nC, Q_oss=131 nC, avalanche-rated E_AS=430 mJ, and thermal resistance R_thJC=0.6 °C/W - all critical for high-frequency, high-current switching designs.

Technical Context

This StrongIRFET™ 2 device uses Infineon's optimized trench-gate process to achieve low conduction loss and fast switching with controlled gate charge distribution: Q_gd/Q_g = 20.4%, V_plateau = 4.6 V, and C_iss/C_oss = 6.6:1 at V_DS=50 V - enabling stable operation in hard-switched and resonant topologies.

Its integrated body diode exhibits t_rr = 44 ns and Q_rr = 327 nC under 500 A/µs di/dt, supporting ZVS transitions in LLC converters while maintaining low forward voltage (V_SD = 0.88 V @ 100 A, T_j=25 °C) and robust 180 A continuous diode current capability.

Key Specifications

Pinout & Package

PG-TO263-7 package with exposed drain tab (pin 4 and metal tab), gate on pin 1, and source connected to pins 2, 3, 5, 6, and 7 - enabling low-inductance, high-current source routing and direct thermal coupling to heatsink via tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N10F7AG and IXFH210N10P, IPF024N10NF2SATMA1 delivers the best balance of ultra-low R_DS(on), moderate Q_g, and lowest thermal resistance in surface-mount form - making it optimal for high-power density, air-cooled server and telecom power stages where footprint and thermal mass are constrained.

Availability

IPF024N10NF2SATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IPF024N10NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the StrongIRFET™ 2 family, engineered specifically for high-current, high-frequency power conversion in datacenter and communications infrastructure where low R_DS(on) × Q_g and avalanche ruggedness are mandatory.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V per datasheet Table 2. For robust long-term reliability, gate drive should be limited to 10–12 V during normal switching, with transient spikes held below 15 V using gate clamping or Zener protection - exceeding 18 V risks oxide degradation and threshold voltage shift over time.

Can IPF024N10NF2SATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (verified in Diagram 9) ensures inherent current sharing across paralleled units. Layout must match source inductance and gate loop symmetry; use individual 1.6 Ω gate resistors and Kelvin source connections to prevent oscillation and uneven dynamic current division.

Is the drain tab electrically isolated from the PCB mounting surface?

No - the drain tab (pin 4 and exposed metal) is at drain potential and must be electrically insulated from the heatsink or chassis using a thermally conductive but electrically isolating pad (e.g., silicone-based insulator with ≤0.25 mm thickness and ≥3 kV dielectric strength) to prevent short-circuit failure.

Does this MOSFET require special PCB layout considerations for high-frequency operation?

Yes - minimize gate loop area with short, wide traces; use separate high-current source return paths (Kelvin source); place decoupling capacitors within 5 mm of the source pins; and avoid routing high-dv/dt drain traces near sensitive analog or gate nodes to suppress crosstalk and EMI generation above 100 MHz.