Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPF031N13NM6ATMA1

Name: IPF031N13NM6ATMA1
Brand: Infineon Technologies
SKU: IPF031N13NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPF031N13NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IPF031N13NM6ATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:690

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPF031N13NM6ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO263-7 package, rated for 135 V V_DS, 3.1 mΩ R_DS(on) max at V_GS = 10 V, and 207 A continuous drain current at T_C = 25 °C. It features ultra-low Q_rr (118 nC), 104 nC total gate charge, and is 100% avalanche tested - optimized for high-efficiency motor drives and battery-powered industrial inverters.

For engineers reviewing the IPF031N13NM6ATMA1 datasheet, IPF031N13NM6ATMA1 pinout, IPF031N13NM6ATMA1 application, or IPF031N13NM6ATMA1 equivalent, key selection criteria include its 175 °C operating temperature rating, low gate charge × R_DS(on) figure-of-merit, and validated performance in synchronous rectification and half-bridge topologies under high di/dt conditions.

Technical Context

This OptiMOSTM 6 device employs trench-gate superjunction technology to achieve simultaneous low conduction loss and fast switching. Its 135 V breakdown voltage supports 48 V–96 V battery systems with margin, while the integrated body diode delivers 118 nC reverse recovery charge and 32 ns typical trr at 500 A/µs diF/dt.

The PG-TO263-7 package uses a thermally enhanced leadframe with exposed drain tab (Pin 4 + metal tab) and multi-source configuration (Pins 2,3,5,6,7), enabling high-current routing and low-inductance source return paths essential for hard-switched 10–100 kHz power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	135 V - Supports 96 V nominal bus systems with 40 % overvoltage margin for transient suppression.
R_DS(on) max	3.1 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 90 A, critical for thermal management in compact motor controllers.
Q_G	104 nC (0–10 V) - Matches gate drivers with 2–4 A peak output for <50 ns turn-on delay in 60 kHz PWM applications.
Q_rr	118 nC at 500 A/µs - Reduces switching loss and EMI in synchronous buck and LLC resonant converters.
T_j max	175 °C - Allows operation in sealed enclosures or high-ambient environments without derating below 125 °C ambient.
I_D cont.	207 A at T_C = 25 °C - Sustains peak motor phase currents in 5–10 kW traction inverters with minimal paralleling.
C_iss	9200 pF max - Sets Miller capacitance limit for gate drive strength requirements in high-side configurations.

Pinout & Package

Package: PG-TO263-7 (D²PAK-7), thermally enhanced surface-mount variant with isolated gate pin and multi-terminal source connection. Exposed drain tab (Pin 4 + metal pad) serves as primary heat path and high-current drain node.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input; requires low-inductance gate loop layout to suppress oscillation during dV/dt > 50 V/ns.
Pins 2,3,5,6,7	Source	Parallel low-inductance source return path; reduces common-source inductance and improves switching stability.
Pin 4 + Tab	Drain	Main power drain node and thermal interface; tab must be soldered to ≥6 cm² copper area for R_thJA ≤ 40 °C/W.

Key Features

Feature	Design Value
Optimized FOM (Q_G × R_DS(on))	323 nC·mΩ - Enables higher frequency operation than prior-gen 100 V MOSFETs without sacrificing efficiency.
100 % Unclamped Inductive Switching (UIS) Tested	90 A I_AS, 435 mJ E_AS - Guarantees ruggedness in motor phase-leg short-circuit events without external snubbers.
Low Q_rr/Q_g Ratio	1.14 - Minimizes shoot-through risk and gate driver stress in synchronous rectification mode.
MOSFET Body Diode Performance	V_SD = 0.87 V @ 90 A, t_rr = 32 ns - Supports ZVS-assisted topologies and reduces freewheeling loss vs. discrete Schottky solutions.
MSL 1 Rating	Unlimited floor life at ≤30 °C / 60 % RH - Eliminates bake requirements before reflow, reducing manufacturing overhead.

Applications

Motor Drive Inverter

Battery Energy Storage System (BESS) Bi-Directional Converter

Use Scenario: 3-phase 48 V–96 V BLDC inverter for electric power steering (EPS) and industrial servo drives.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-pack half-bridge configuration, switching at 20–40 kHz.

Use Value: 3.1 mΩ R_DS(on) and 118 nC Q_rr reduce conduction + switching losses by 18 % versus comparable 100 V MOSFETs, extending battery runtime.

Use Scenario: 10 kW bi-directional DC/DC stage interfacing 48 V battery stack with 400 V grid-side bus.

IC Role / Device Role / Timing Role: Primary switch in interleaved dual-phase buck-boost topology, operating at 60 kHz with synchronous rectification.

Use Value: 175 °C T_j rating and 207 A I_D allow full-load operation without forced air cooling, simplifying thermal design in rack-mounted BESS units.

Industrial UPS Half-Bridge

Electric Vehicle On-Board Charger (OBC) PFC Stage

Use Scenario: Line-interactive UPS delivering clean 230 V AC output from 48 V DC battery bank during mains failure.

IC Role / Device Role / Timing Role: Low-side switch in push-pull inverter stage, handling 150 A peak surge currents during load transients.

Use Value: 828 A pulsed drain current rating and 100 % UIS qualification ensure reliable operation during 200 % overload for 200 ms without failure.

Use Scenario: Totem-pole PFC stage in 6.6 kW OBC converting 230 V AC to 400 V DC with >98.5 % efficiency target.

IC Role / Device Role / Timing Role: High-frequency switching device in critical-conduction-mode (CrCM) operation, requiring low Q_g and fast body diode recovery.

Use Value: 104 nC Q_g and 32 ns t_rr enable CrCM operation up to 150 kHz while maintaining <0.5 % THD and meeting EN 61000-3-2 Class A limits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	100 V V_DS, 2.2 mΩ R_DS(on), 220 A I_D, TO-220FP package - lower voltage rating, higher current, but no MSL 1 or 175 °C rating.	Limited to ≤60 V systems; unsuitable for 96 V battery architectures or high-temperature enclosures.	Select only when 100 V margin suffices and TO-220 mechanical fit is required; verify thermal interface for same power dissipation.
IXFH32N135X3	135 V V_DS, 4.2 mΩ R_DS(on), 32 A I_D, TO-247 package - higher R_DS(on), lower current, larger footprint, but higher SOA robustness.	Requires paralleling for >100 A loads; better suited for linear-mode or avalanche-heavy applications than high-frequency switching.	Prefer for analog pass-element or high-reliability single-device designs where gate charge and thermal density are secondary to ruggedness.

Compared with STL220N10F7 and IXFH32N135X3, IPF031N13NM6ATMA1 uniquely balances 135 V rating, sub-3.2 mΩ on-resistance, and MSL 1 manufacturability - making it optimal for space-constrained, high-power-density motor and energy storage converters where thermal headroom and production yield are critical.

Availability

IPF031N13NM6ATMA1 is available at Aetrix Electronics and suitable for motor drive inverters, battery energy storage system (BESS) bi-directional converters, and industrial uninterruptible power supplies (UPS) requiring stable component supply across extended production lifecycles.

Supply support for IPF031N13NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOSTM 6 family - engineered specifically for high-efficiency, high-current switching in battery-powered and industrial motor control applications, emphasizing low R_DS(on), fast switching, and ruggedness under repetitive avalanche stress.

FAQ

What is the maximum allowable PCB copper area for thermal performance?

The datasheet specifies that a 6 cm² copper area (single layer, 70 µm thick) on FR4 PCB achieves R_thJA = 40 °C/W. Using less than this area increases junction-to-ambient resistance - for example, minimal footprint yields R_thJA = 62 °C/W. Thermal simulation with actual board stack-up is recommended before final layout.

Can IPF031N13NM6ATMA1 be used in synchronous rectification mode?

Yes - its low Q_rr (118 nC), fast t_rr (32 ns), and low V_SD (0.87 V @ 90 A) make it suitable for synchronous rectification in DC/DC converters up to 100 kHz. Gate drive must be precisely timed to avoid shoot-through; dead-time should exceed 50 ns due to gate plateau voltage of 4.5 V.

Is the PG-TO263-7 package compatible with standard TO-263 reflow profiles?

Yes - it is MSL 1 rated per J-STD-020, meaning unlimited floor life and compatibility with standard Pb-free reflow profiles (peak 260 °C, 20–40 sec above 217 °C). The exposed drain tab requires full-solder coverage to ensure thermal and mechanical reliability; voiding >20 % degrades R_thJC.

Does the 207 A continuous drain current assume case or ambient temperature?

The 207 A rating is specified at T_C = 25 °C (case temperature), not ambient. At T_C = 100 °C, the rating drops to 146 A. Derating curves in Diagram 2 show linear reduction; for T_C = 80 °C, usable I_D is ~170 A. Ambient-based ratings require full thermal modeling including R_thJA and PCB layout.

IPF031N13NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IPF031N13NM6ATMA1 FAQ

1.How can I place an order for IPF031N13NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPF031N13NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPF031N13NM6ATMA1 reliable?

The price and inventory of IPF031N13NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPF031N13NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPF031N13NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPF031N13NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPF031N13NM6ATMA1?

IPF031N13NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPF031N13NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPF031N13NM6ATMA1?

For technical support, including IPF031N13NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPF031N13NM6ATMA1 requirements.

6.How does Aetrix verify that IPF031N13NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPF031N13NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPF031N13NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPF031N13NM6ATMA1?

All IPF031N13NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPF031N13NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPF031N13NM6ATMA1 part is unused and in its original packaging.

Return procedure for IPF031N13NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …