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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPF039N08NF2SATMA1

Name: IPF039N08NF2SATMA1
Brand: Infineon Technologies
SKU: IPF039N08NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPF039N08NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IPF039N08NF2SATMA1.pdf

Description:: TRENCH 40<-<100V PG-TO263-7

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Product details

Overview

IPF039N08NF2SATMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO263-7 package, optimized for high-efficiency DC-DC conversion and motor control. It delivers 80 V V_DS, 3.9 mΩ R_DS(on) max at V_GS = 10 V, 126 A continuous drain current at T_C = 25 °C, and 100% avalanche tested for ruggedness - deployed in synchronous buck converters for server VRMs.

For engineers reviewing the IPF039N08NF2SATMA1 datasheet, IPF039N08NF2SATMA1 pinout, IPF039N08NF2SATMA1 application, or IPF039N08NF2SATMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, Q_g/Q_gd ratio for gate drive loss, SOA robustness under pulse load, and thermal resistance (R_thJC = 1.0 °C/W) for high-power density PCB layouts.

Technical Context

This StrongIRFET™ 2 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its 65 nC Q_oss and 54 nC Q_g support high-frequency operation up to 1 MHz in hard-switched topologies, with gate plateau voltage of 4.9 V enabling reliable turn-on under noisy gate drive conditions.

The integrated body diode exhibits 33 ns t_rr and 189 nC Q_rr, making it suitable for synchronous rectification where reverse recovery behavior directly impacts efficiency and EMI. Thermal design is anchored by a low R_thJC of 1.0 °C/W and validated JEDEC qualification per JESD47.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports 48 V input bus systems with 20 % safety margin against transients.
R_DS(on) max	3.9 mΩ @ V_GS = 10 V - enables <1.2 W conduction loss at 80 A, critical for VRM phase interleaving.
I_D continuous	126 A @ T_C = 25 °C - rated for high-current single-phase power stages in telecom and AI accelerators.
Q_g	54 nC - determines gate driver peak current requirement (~2.7 A for 20 ns rise time with 2 Ω R_G).
E_AS	113 mJ - ensures single-pulse avalanche survivability during inductive load switching faults.
R_thJC	1.0 °C/W - allows direct heatsink mounting for >150 W dissipation without thermal derating at case level.
t_rr	33 ns - minimizes commutation loss and voltage overshoot when used as synchronous FET in buck converters.

Pinout & Package

IPF039N08NF2SATMA1 is housed in PG-TO263-7 (D²PAK-7) package with exposed drain tab for thermal and electrical connection. The package features 7 terminals: Gate (Pin 1), Source (Pins 2,3,5,6,7), Drain (Pin 4 + metal tab).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal requiring <54 nC charge; isolated from power paths; sensitive to ESD.
Pins 2,3,5,6,7	Source	Common source node for all internal cells; low-inductance parallel routing required for switching stability.
Pin 4 + Tab	Drain	Main power output path; tab provides primary thermal path to heatsink and must be electrically connected to system ground or negative rail.

Key Features

Feature	Design Value
N-channel normal-level logic	Operates fully enhanced at V_GS ≥ 10 V - compatible with standard 12 V gate drivers without level-shifting.
100% avalanche tested	Guarantees single-pulse energy handling up to 113 mJ - eliminates need for external snubbers in inductive switching.
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21 - meets environmental requirements for industrial and automotive end equipment.
Optimized Q_g/Q_gd ratio	Q_gd = 12 nC / Q_g = 54 nC ≈ 0.22 - reduces Miller-induced shoot-through risk in half-bridge configurations.
JEDEC-qualified reliability	Validated per JESD47 - ensures long-term parametric stability under thermal cycling and humidity bias stress.

Applications

Server Voltage Regulator Modules

Industrial Motor Drives

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) in data center servers.

IC Role / Device Role / Timing Role: High-side synchronous FET operating at 500 kHz–1 MHz with tight dead-time control.

Use Value: 3.9 mΩ R_DS(on) and 1.0 °C/W R_thJC enable >95 % efficiency at 100 A per phase while minimizing thermal footprint.

Use Scenario: Inverter leg in 3 kW BLDC motor drive for HVAC compressors and factory automation.

IC Role / Device Role / Timing Role: Low-side switching element in 3-phase bridge, conducting continuous 103 A via integrated diode.

Use Value: 33 ns t_rr and 189 nC Q_rr reduce switching losses and EMI during PWM commutation cycles.

Telecom Power Supplies

AI Accelerator Power Delivery

Use Scenario: 48 V input-to-12 V intermediate bus converter in 5G base station power architecture.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge topology with ZVS capability.

Use Value: 65 nC Q_oss supports soft-switching down to 200 kHz, lowering transformer size and conduction loss trade-off.

Use Scenario: Point-of-load regulator supplying 0.75 V @ 600 A to GPU/TPU modules in AI training racks.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck stage with paralleled devices per phase.

Use Value: 126 A I_D rating and 103 A I_S allow scalable current sharing across 6–12 phases without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 2.2 mΩ @ 10 V but V_DS = 60 V; higher Q_g = 92 nC; TO-263-7 package.	Limited to ≤60 V systems; less suitable for 48 V transient-tolerant designs requiring 80 V rating.	Select only if lower R_DS(on) outweighs reduced voltage margin and higher gate drive loss.
IXFH50N65X2	V_DS = 650 V, R_DS(on) = 42 mΩ, Q_g = 105 nC; TO-247 package; not avalanche-rated.	Designed for high-voltage PFC, not low-voltage high-current switching; incompatible thermal profile.	Avoid for VRM/motor drive use - excessive R_DS(on) and package mismatch negate benefits.

Compared with STL220N6F7 and IXFH50N65X2, IPF039N08NF2SATMA1 uniquely balances 80 V rating, sub-4 mΩ on-resistance, and JEDEC-qualified avalanche ruggedness in a thermally optimized D²PAK-7 package - essential for compact, high-reliability 48 V power delivery.

Availability

IPF039N08NF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom power supplies requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.

Supply support for IPF039N08NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensor, and automotive ICs, with over 30 years of high-reliability discrete device development.

This part belongs to the StrongIRFET™ 2 family, engineered specifically for high-current, high-frequency power conversion in data center, industrial, and communications infrastructure - emphasizing low R_DS(on), fast switching, and ruggedness under real-world fault conditions.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The absolute maximum junction temperature is 175 °C. At T_C = 100 °C, the continuous drain current derates to 96 A (per Table 2), and further to 83 A at T_C = 100 °C with V_GS = 6 V. This reflects silicon thermal limits and safe operating area constraints - not just package capability - and must be verified using actual board-level thermal measurements.

Is IPF039N08NF2SATMA1 suitable for synchronous rectification in a buck converter?

Yes - its integrated body diode has 33 ns reverse recovery time and 189 nC Q_rr, enabling efficient synchronous rectification at frequencies up to 1 MHz. The low R_DS(on) also minimizes conduction loss during freewheeling, and the 103 A I_S rating supports high-current continuous conduction mode operation.

How does the PG-TO263-7 package differ from standard TO-263-7 in layout and thermal design?

PG-TO263-7 is Infineon's qualified variant of TO-263-7, featuring tighter dimensional tolerances, enhanced solder joint reliability, and validated thermal performance under JEDEC standards. The exposed drain tab requires minimum 6 cm² copper area on FR4 PCB for R_thJA = 40 °C/W - critical for achieving rated 126 A current without exceeding T_j limits.

Does this MOSFET require gate resistors for EMI suppression, and what value is recommended?

Yes - a 1.6 Ω external gate resistor is used in the datasheet's switching timing test (Table 5). For EMI reduction in production, values between 2.2 Ω and 4.7 Ω are typical; however, increasing R_G raises switching losses and may require re-evaluation of Q_g-driven gate driver capability and SOA during turn-off.

IPF039N08NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 126A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:: 81 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-14

IPF039N08NF2SATMA1 FAQ

1.How can I place an order for IPF039N08NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPF039N08NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPF039N08NF2SATMA1 reliable?

The price and inventory of IPF039N08NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPF039N08NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPF039N08NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPF039N08NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPF039N08NF2SATMA1?

IPF039N08NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPF039N08NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPF039N08NF2SATMA1?

For technical support, including IPF039N08NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPF039N08NF2SATMA1 requirements.

6.How does Aetrix verify that IPF039N08NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPF039N08NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPF039N08NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPF039N08NF2SATMA1?

All IPF039N08NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPF039N08NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPF039N08NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPF039N08NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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