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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPF042N10NF2SATMA1

Name: IPF042N10NF2SATMA1
Brand: Infineon Technologies
SKU: IPF042N10NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPF042N10NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPF042N10NF2SATMA1.pdf

Description:: MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPF042N10NF2SATMA1 from Infineon Technologies is a 100 V, 4.25 mΩ N-channel Trench MOSFET in PG-TO263-7 package with tab-drain configuration, optimized for high-current synchronous rectification and DC-DC power stages in server PSUs and telecom power supplies. It delivers 139 A continuous drain current at T_C=25 °C, features 100% avalanche tested ruggedness, and supports fast switching with Q_G=57 nC and Q_OSS=74 nC.

For engineers reviewing the IPF042N10NF2SATMA1 datasheet, IPF042N10NF2SATMA1 pinout, IPF042N10NF2SATMA1 application, or IPF042N10NF2SATMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, gate charge profile for ZVS/ZCS compatibility, thermal resistance (R_thJC=0.9 °C/W), and integrated reverse diode performance (V_SD=0.91 V @ 80 A).

Technical Context

This StrongIRFET™ 2 device uses Infineon's advanced TrenchStop™ process to achieve low conduction loss while maintaining robust switching behavior. Its 100 V V_DS rating and 4.25 mΩ R_DS(on) max support high-efficiency operation in 48 V input bus systems, with gate threshold voltage (V_GS(th)) tightly specified at 2.2–3.8 V for reliable turn-on under varied drive conditions.

The MOSFET integrates a fast, low-Q_rr body diode (Q_rr=287 nC, t_rr=40 ns) enabling use in synchronous buck topologies without external Schottky replacement. Thermal design is supported by a low junction-to-case resistance (0.9 °C/W) and validated JEDEC qualification for industrial reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 48 V bus designs with ≥2× voltage margin against transients.
R_DS(on), max	4.25 mΩ @ V_GS=10 V, I_D=80 A - Enables <1.5 W conduction loss at 80 A, critical for high-density PSU layouts.
I_D, cont	139 A @ T_C=25 °C - Sustains full-load current in single-phase server VRMs with minimal parallel devices.
Q_G	57 nC - Matches standard gate drivers (e.g., UCC27531) for <100 ns turn-on with 1.6 Ω external gate resistor.
Q_OSS	74 nC - Limits turn-off energy loss and enables soft-switching in resonant LLC converters.
V_GS(th)	2.2–3.8 V - Ensures clean turn-on with 5 V logic-level gate drivers while avoiding false triggering.
R_thJC	0.9 °C/W - Allows direct heatsink mounting via drain tab for efficient thermal path in TO263-7 footprint.

Pinout & Package

IPF042N10NF2SATMA1 uses the PG-TO263-7 (D²PAK-7) package with exposed drain tab for enhanced thermal dissipation. The drain is connected to the metal tab (Pin 4), gate to Pin 1, and source to Pins 2, 3, 5, 6, and 7 - enabling low-inductance source return paths in high-frequency power stages.

Pin/Terminal	Circuit Role	Design Meaning
Tab / Pin 4	Drain	Primary high-current output node; thermally coupled to heatsink via soldered tab for R_thJC=0.9 °C/W.
Pin 1	Gate	Control input; requires low-impedance drive due to 57 nC total gate charge and 1.3 Ω internal gate resistance.
Pins 2,3,5,6,7	Source	Common source return; multiple pins reduce bond-wire inductance and improve current sharing in high-dI/dt operation.

Key Features

Feature	Design Value
StrongIRFET™ 2 Trench technology	Delivers 4.25 mΩ R_DS(on) at 100 V rating - 15% lower on-resistance than prior-generation 100 V MOSFETs in same package.
100% avalanche rated	Withstands 105 mJ single-pulse avalanche energy (E_AS) - eliminates need for external clamping in inductive load switching.
Optimized body diode	Q_rr=287 nC and t_rr=40 ns enable synchronous rectification without shoot-through risk in 500 kHz+ buck converters.
RoHS & halogen-free	Pb-free lead plating and IEC61249-2-21 compliant materials - meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3) for surface-mount assembly.
JEDEC-qualified	Validated per JESD47 stress testing - ensures >10-year field reliability in industrial and telecom power applications.

Applications

Server Voltage Regulator Modules

Telecom 48 V Intermediate Bus Converters

Use Scenario: High-current, multiphase buck converter supplying CPU/GPU core voltage from 48 V input bus.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) operating at 300–600 kHz with precise dead-time control.

Use Value: 4.25 mΩ R_DS(on) reduces conduction loss by 22% vs. 5.5 mΩ alternatives, improving full-load efficiency from 92.1% to 93.4%.

Use Scenario: Isolated LLC resonant converter delivering 12 V/100 A to base station RF amplifiers.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier with zero-voltage switching (ZVS) enabled by low Q_OSS (74 nC).

Use Value: Q_rr=287 nC minimizes reverse recovery loss, reducing secondary-side temperature rise by 11 °C at 500 kHz.

Industrial Motor Drive Inverters

EV On-Board Charger (OBC) DC-DC Stages

Use Scenario: 3-phase inverter stage driving 5–10 kW PMSM motors in factory automation systems.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-pack half-bridge modules, handling 139 A peak phase current.

Use Value: 100% avalanche testing ensures survival during motor stall or short-circuit events without external protection.

Use Scenario: Bidirectional DC-DC stage interfacing 400 V battery and 48 V auxiliary system in 11 kW OBC.

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) topology operating at 200–300 kHz with soft switching.

Use Value: Low C_oss (630 pF) and Q_g/Q_gd ratio of 4.75 enable stable ZVS across 20–100% load range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7AG	R_DS(on)=3.8 mΩ (lower), Q_G=65 nC (higher), PG-TO263-7 package, no tab drain.	Lacks integrated drain tab - requires PCB copper area for thermal management instead of direct heatsink mounting.	Preferred when board-level thermal design allows larger copper pour and gate drive strength supports higher Q_G.
IXFH42N10X3	R_DS(on)=4.5 mΩ (slightly higher), Q_OSS=110 nC (69% higher), TO-247 package, higher R_thJC=1.2 °C/W.	TO-247 mechanical form factor increases layout area and parasitic inductance vs. D²PAK-7.	Selected where legacy TO-247 socket compatibility or higher pulse current (I_D,pulse=620 A) is required.

Compared with STL220N10F7AG and IXFH42N10X3, IPF042N10NF2SATMA1 offers the optimal balance of low R_DS(on), low Q_OSS, and tab-drain thermal performance in the industry-standard D²PAK-7 footprint - making it ideal for space-constrained, high-efficiency server and telecom power stages.

Availability

IPF042N10NF2SATMA1 is available at Aetrix Electronics and suitable for server voltage regulator modules, telecom intermediate bus converters, and industrial motor drive inverters requiring stable component supply and long-term production continuity.

Supply support for IPF042N10NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with over 30 years of MOSFET innovation and manufacturing excellence.

This part belongs to the StrongIRFET™ 2 family, engineered specifically for high-efficiency, high-power-density DC-DC conversion in datacenter, telecom, and industrial power systems - emphasizing low R_DS(on), fast switching, and rugged avalanche capability.

FAQ

What is the maximum continuous drain current for IPF042N10NF2SATMA1 at 100 °C case temperature?

The maximum continuous drain current is 98 A at T_C=100 °C and V_GS=10 V, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the PG-TO263-7 package and must be applied in thermal simulations using R_thJC=0.9 °C/W and ambient constraints.

Does IPF042N10NF2SATMA1 have an integrated Schottky diode?

No - it uses a monolithic silicon body diode optimized for synchronous rectification. Its forward voltage is 0.91 V at 80 A and 25 °C (Table 7), with reverse recovery charge Q_rr=287 nC and time t_rr=40 ns, enabling efficient operation without external Schottky replacement in most buck and LLC topologies.

Can IPF042N10NF2SATMA1 be used in avalanche mode during circuit fault conditions?

Yes - it is 100% avalanche tested per datasheet specification, with E_AS=105 mJ at I_D=82 A. This allows safe operation during inductive load switching faults without external snubbers, provided the single-pulse energy does not exceed this limit and thermal accumulation is managed.

What is the gate plateau voltage and why does it matter for drive design?

The gate plateau voltage is 4.8 V (Table 6), representing the Miller region where V_GS remains relatively constant during dV_DS/dt. This value determines the minimum gate drive voltage needed to fully enhance the channel and impacts gate driver selection - a 5 V logic-level driver can reliably reach full enhancement, but margin below 4.8 V risks incomplete turn-on.

IPF042N10NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Ta), 139A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 4.25mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 93µA

Gate Charge (Qg) (Max) @ Vgs:: 85 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4000 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7

IPF042N10NF2SATMA1 FAQ

1.How can I place an order for IPF042N10NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPF042N10NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPF042N10NF2SATMA1 reliable?

The price and inventory of IPF042N10NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPF042N10NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPF042N10NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPF042N10NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPF042N10NF2SATMA1?

IPF042N10NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPF042N10NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPF042N10NF2SATMA1?

For technical support, including IPF042N10NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPF042N10NF2SATMA1 requirements.

6.How does Aetrix verify that IPF042N10NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPF042N10NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPF042N10NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPF042N10NF2SATMA1?

All IPF042N10NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPF042N10NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPF042N10NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPF042N10NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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