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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPF050N10NF2SATMA1

Name: IPF050N10NF2SATMA1
Brand: Infineon Technologies
SKU: IPF050N10NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPF050N10NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPF050N10NF2SATMA1.pdf

Description:: MOSFET

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Product details

Overview

IPF050N10NF2SATMA1 from Infineon Technologies is a 100 V, 117 A N-channel enhancement-mode Power MOSFET in PG-TO263-7 package with tab-drain configuration, optimized for high-efficiency synchronous rectification and DC-DC conversion in server power supplies and telecom rectifiers. It features 5.05 mΩ max R_DS(on) at V_GS = 10 V, 51 nC total gate charge, and 100% avalanche-tested ruggedness.

For engineers reviewing the IPF050N10NF2SATMA1 datasheet, IPF050N10NF2SATMA1 pinout, IPF050N10NF2SATMA1 application, or IPF050N10NF2SATMA1 equivalent, key selection criteria include low conduction loss under high-current continuous operation, fast switching performance (t_d(off) = 25 ns), thermal robustness (R_thJC = 1.0 °C/W), and integrated reverse diode with Q_rr = 247 nC for hard-switched topologies.

Technical Context

This StrongIRFET™ 2 device uses trench-gate field-stop superjunction technology to achieve ultra-low R_DS(on) while maintaining high voltage blocking capability and fast switching. Its gate threshold voltage (V_GS(th) = 2.2–3.8 V) supports standard 10 V gate drive, and its 67 nC output charge (Q_oss) enables efficient operation in high-frequency ZVS and hard-switched converters.

The PG-TO263-7 package integrates a thermally enhanced drain-connected copper tab for direct heatsink mounting, supporting 150 W power dissipation at T_C = 25 °C. Its 104 A continuous diode current rating and 37 ns reverse recovery time make it suitable for synchronous FET roles where body diode commutation is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Rated blocking voltage for 48 V input bus systems with 20 % derating margin.
R_DS(on), max	5.05 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 60 A DC, reducing thermal load in high-current rails.
I_D	117 A at T_C = 25 °C - Supports high-power single-phase VRMs and POL converters without parallel devices.
Q_G	51 nC - Matches typical 10 V gate drivers (e.g., UCC27531) with <200 ns turn-on delay in 500 kHz designs.
Q_OSS	67 nC - Limits turn-off energy loss in hard-switched topologies operating up to 300 kHz.
E_AS	100 mJ - Withstands single-pulse inductive energy in motor drive or UPS fault conditions without failure.
V_SD	0.91 V at I_F = 60 A - Reduces reverse conduction loss during dead-time in synchronous buck stages.

Pinout & Package

PG-TO263-7 package with exposed drain tab (Pin 4 and metal tab) for low-inductance, high-current drain connection and direct thermal path to heatsink. Gate (Pin 1) and source (Pins 2,3,5,6,7) are on PCB side; source pins are internally paralleled for low inductance and high current sharing.

Pin/Terminal	Circuit Role	Design Meaning
Tab & Pin 4	Drain	Main high-current power path; electrically and thermally connected to heatsink via soldered tab.
Pin 1	Gate	Control terminal requiring <51 nC charge; routed with short, low-inductance trace to minimize ringing.
Pins 2,3,5,6,7	Source	Parallel low-inductance return path for 117 A; must be connected to common source plane with minimal loop area.

Key Features

Feature	Design Value
100 % avalanche tested	Guarantees ruggedness against inductive switching transients without external snubbers in motor drives or SMPS.
StrongIRFET™ 2 trench-gate architecture	Delivers 15 % lower R_DS(on) vs. prior generation at same die size, enabling smaller PCB footprints.
Halogen-free & RoHS-compliant plating	Meets IPC-J-STD-609A Class 1 requirements for green manufacturing and end-of-life compliance.
Optimized for synchronous rectification	Low Q_rr (247 nC) and fast t_rr (37 ns) reduce cross-conduction loss and EMI in high-frequency buck converters.

Applications

Server VRM Phase Legs

Telecom Rectifier Modules

Use Scenario: High-current, high-efficiency 48 V–12 V step-down conversion in dual-phase or multi-phase CPU/GPU VRMs.

IC Role / Device Role / Timing Role: Synchronous high-side or low-side FET in interleaved buck topology operating at 300–600 kHz.

Use Value: 5.05 mΩ R_DS(on) reduces conduction loss by >25 % vs. 6.5 mΩ alternatives, improving full-load efficiency to >95 %.

Use Scenario: Primary-side synchronous rectification in 48 V telecom AC/DC front-end rectifiers with active PFC.

IC Role / Device Role / Timing Role: Low-side switch in LLC resonant converter secondary stage, handling 100+ A continuous output current.

Use Value: 104 A diode current rating and 0.91 V V_SD minimize reverse conduction loss during dead-time, increasing system efficiency by 0.8 % at 50 % load.

Industrial Motor Drives

UPS Inverter Stages

Use Scenario: Half-bridge leg in 3 kW BLDC motor inverters for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Switching element in 20 kHz PWM-driven inverter bridge with 100 V DC-link.

Use Value: 100 mJ E_AS rating ensures reliable operation during motor stall or short-circuit events without desaturation protection.

Use Scenario: Output H-bridge in online double-conversion UPS delivering clean 230 VAC from 400 VDC bus.

IC Role / Device Role / Timing Role: High-current switching FET in 16 kHz SPWM inverter stage with bidirectional current flow.

Use Value: Low C_oss (570 pF) and fast t_f (9 ns) reduce switching loss and improve THD performance below 3 %.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 4.3 mΩ (lower), Q_G = 62 nC (higher), TO-220FP package (no tab)	Limited to ≤80 A continuous due to higher R_thJA; unsuitable for compact heatsink-less layouts	Prefer when lowest conduction loss dominates and board space allows larger footprint.
IXFH50N10X	R_DS(on) = 5.5 mΩ (higher), Q_G = 42 nC (lower), TO-247 package (isolated tab)	Better gate drive margin but 20 % higher conduction loss; requires isolated mounting hardware	Prefer when gate drive simplicity and isolation are prioritized over peak efficiency.

Compared with STL220N10F7 and IXFH50N10X, IPF050N10NF2SATMA1 delivers optimal balance of low R_DS(on), moderate Q_G, and thermally superior PG-TO263-7 packaging-making it ideal for space-constrained, high-power-density server and telecom power stages where thermal management is critical.

Availability

IPF050N10NF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom rectifiers, and industrial motor drives requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IPF050N10NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This device belongs to the StrongIRFET™ 2 Power-Transistor product line, engineered specifically for high-efficiency, high-reliability power conversion in datacenter, telecom, and industrial infrastructure applications demanding low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPF050N10NF2SATMA1 supports 86 A continuous drain current at T_C = 100 °C per datasheet Table 2. This value accounts for thermal de-rating and assumes proper PCB copper area (6 cm²) and vertical mounting in still air. At 125 °C case temperature, the rating drops to 77 A.

Does this MOSFET require a negative gate voltage for safe turn-off in high-dv/dt environments?

No. The device has a gate threshold voltage range of 2.2–3.8 V and is fully compatible with 0 V to 10 V gate drive. Its 20 V maximum gate-source voltage rating and low gate charge enable robust turn-off using standard non-isolated drivers without negative bias, provided gate loop inductance is minimized.

Can the integrated body diode replace an external Schottky in synchronous rectification?

Yes-the body diode is rated for 104 A continuous forward current and exhibits 0.91 V forward voltage at 60 A and 25 °C. While not as low-V_F as a discrete Schottky, its 37 ns t_rr and 247 nC Q_rr make it viable for synchronous rectification in buck converters up to 500 kHz without additional diodes.

Is the PG-TO263-7 package lead-free and halogen-free per industry standards?

Yes. The IPF050N10NF2SATMA1 uses Pb-free lead plating and complies with RoHS Directive 2011/65/EU. It also meets IEC 61249-2-21 for halogen-free materials, with chlorine and bromine content below 900 ppm each, verified through material declaration and testing.

IPF050N10NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Ta), 117A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 5.05mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 84µA

Gate Charge (Qg) (Max) @ Vgs:: 76 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3600 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7

IPF050N10NF2SATMA1 FAQ

1.How can I place an order for IPF050N10NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPF050N10NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPF050N10NF2SATMA1 reliable?

The price and inventory of IPF050N10NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPF050N10NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPF050N10NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPF050N10NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPF050N10NF2SATMA1?

IPF050N10NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPF050N10NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPF050N10NF2SATMA1?

For technical support, including IPF050N10NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPF050N10NF2SATMA1 requirements.

6.How does Aetrix verify that IPF050N10NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPF050N10NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPF050N10NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPF050N10NF2SATMA1?

All IPF050N10NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPF050N10NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPF050N10NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPF050N10NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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