Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPF129N20NM6ATMA1

Name: IPF129N20NM6ATMA1
Brand: Infineon Technologies
SKU: IPF129N20NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPF129N20NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPF129N20NM6ATMA1.pdf

Description:: IPF129N20NM6ATMA1

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:864

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPF129N20NM6ATMA1 from Infineon is an N-channel enhancement-mode MOSFET in the OptiMOS™ 6 family, rated for 200 V drain-source voltage, 12.9 mΩ typical R_DS(on) at V_GS = 10 V, 87 A continuous drain current, and 175 °C maximum junction temperature. It serves as a high-efficiency power switch in DC-DC converters, motor drives, and industrial SMPS where low conduction loss and fast switching are critical.

For engineers reviewing the IPF129N20NM6ATMA1 datasheet, IPF129N20NM6ATMA1 pinout, IPF129N20NM6ATMA1 application, or IPF129N20NM6ATMA1 equivalent, key selection criteria include its 37 nC total gate charge, 116 nC output charge (Q_oss), 271 nC reverse recovery charge (Q_rr at 1000 A/μs), 0.32 °C/W thermal resistance (junction-to-case), and D²-PAK (PG-TO263-7) package with integrated source paralleling.

Technical Context

This device employs trench-gate superjunction technology optimized for high-voltage, high-current switching in hard-switched and synchronous rectification topologies. Its gate plateau voltage of 6.9 V enables robust drive margin, while the low Q_g × R_DS(on) figure-of-merit (FOM) targets efficiency-critical 48 V–60 V input systems.

The integrated body diode exhibits 43–86 nC reverse recovery charge (Q_rr) at dI/dt = 100 A/μs and 271–542 nC at 1000 A/μs, supporting ZVS-capable designs. Avalanche-rated to 258 mJ (single pulse), it sustains repetitive transient stress without derating in properly designed layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Maximum blocking voltage before avalanche onset; supports 150 V bus designs with 33 % safety margin.
R_DS(on) max	12.9 mΩ @ V_GS = 10 V, I_D = 65 A - Enables <1.3 W conduction loss at 87 A, reducing heatsink requirements.
Q_g	37 nC - Total gate charge determines driver strength needed; compatible with standard 1–2 A peak gate drivers.
Q_oss	116 nC - Output charge directly impacts turn-off energy and hard-switching losses in buck/LLC primary switches.
Q_rr	271 nC @ dI/dt = 1000 A/μs - Low reverse recovery charge minimizes diode-induced switching loss and EMI in synchronous FETs.
T_j(max)	175 °C - Extended temperature rating allows operation in sealed enclosures or high-ambient industrial environments.
R_thJC	0.32 °C/W - Junction-to-case thermal resistance enables >200 W power dissipation with moderate heatsinking.

Pinout & Package

IPF129N20NM6ATMA1 uses the PG-TO263-7 (D²-PAK) package with exposed drain tab for low-inductance, high-current PCB mounting. The 7-pin layout integrates multiple source terminals to reduce package inductance and improve current sharing.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires low-impedance drive path to minimize switching loss and ringing.
Pins 2, 3, 5, 6, 7	Source	Parallel source connections reduce common-source inductance and improve di/dt capability in high-frequency switching.
Pin 4 + Tab	Drain	Main power terminal; tab is electrically connected to Pin 4 and must be soldered to large copper pour for thermal and electrical performance.

Key Features

Feature	Design Value
Very low R_DS(on) × Q_g FOM	Optimizes trade-off between conduction and switching loss-critical for high-frequency (>300 kHz) SMPS efficiency.
Low Q_rr and soft-recovery body diode	Reduces voltage overshoot and EMI during commutation; enables reliable synchronous rectification in LLC and buck converters.
100 % avalanche tested	Guarantees ruggedness against inductive load transients and overvoltage events without external snubbers.
Pb-free, halogen-free, MSL 1	Complies with RoHS and JEDEC J-STD-020; supports lead-free reflow assembly and long-term reliability in harsh environments.

Applications

Server VRMs

Industrial Motor Drives

Use Scenario: High-density 48 V input buck converters delivering up to 300 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Synchronous high-side power switch operating at 500–1000 kHz with tight duty-cycle control.

Use Value: 12.9 mΩ R_DS(on) and 37 nC Q_g enable >95 % efficiency at full load while minimizing thermal footprint.

Use Scenario: 3-phase inverter stages in servo drives and pump controllers handling 10–30 kW loads.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverters with active short-circuit protection.

Use Value: 175 °C T_j(max) and 258 mJ single-pulse avalanche energy ensure fault tolerance during stall or overload conditions.

Telecom Rectifiers

Renewable Energy Inverters

Use Scenario: Secondary-side synchronous rectification in isolated 48 V telecom PSUs with 94 %+ efficiency targets.

IC Role / Device Role / Timing Role: Fast-recovery, low-Q_rr synchronous FET replacing Schottky diodes in forward and LLC topologies.

Use Value: 271 nC Q_rr at 1000 A/μs reduces reverse recovery loss by >40 % vs. prior-gen OptiMOS™ 5 devices.

Use Scenario: DC optimizers and microinverters interfacing PV strings with battery storage systems.

IC Role / Device Role / Timing Role: High-voltage DC-DC isolation stage switch handling bidirectional power flow and MPPT transients.

Use Value: 200 V V_DSS and 0.32 °C/W R_thJC support compact, fanless designs meeting IEC 62109 safety and thermal requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB129N20N3 G	Same R_DS(on) (12.9 mΩ), but OptiMOS™ 3 generation; higher Q_g (52 nC) and Q_rr (380 nC).	Limited to ≤300 kHz switching; less suitable for ZVS or high-density VRMs.	Select only if cost sensitivity outweighs efficiency and thermal performance needs.
STP130N20F6	200 V, 13 mΩ, but 48 nC Q_g and no specified Q_rr at 1000 A/μs; lower avalanche rating (180 mJ).	Not recommended for synchronous rectification or high-dI/dt motor control.	Prefer only for non-critical, low-frequency industrial switching where gate drive margin is ample.

Compared with IPB129N20N3G and STP130N20F6, IPF129N20NM6ATMA1 delivers superior high-frequency efficiency via lower Q_g × R_DS(on), tighter Q_rr control, and guaranteed avalanche ruggedness-making it optimal for next-generation power conversion where thermal headroom and EMI are constrained.

Availability

IPF129N20NM6ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom rectifiers, and renewable energy inverters requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for IPF129N20NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 6 Power-Transistor product line, engineered specifically for high-efficiency, high-power-density DC-DC conversion in datacenter, industrial, and renewable energy systems operating up to 200 V.

FAQ

What is the maximum continuous drain current for IPF129N20NM6ATMA1 at 100 °C case temperature?

The maximum continuous drain current is 62 A at T_C = 100 °C and V_GS = 10 V, per Table 2 of the official Infineon datasheet Revision 2.1. This rating assumes proper PCB copper area (6 cm²) and vertical mounting in still air. Derating applies above 100 °C case temperature.

Does IPF129N20NM6ATMA1 support synchronous rectification in LLC resonant converters?

Yes-it is qualified for synchronous rectification due to its low Q_rr (271 nC at 1000 A/μs), soft-recovery body diode, and 175 °C T_j(max). These features reduce reverse recovery loss and thermal stress during zero-voltage switching transitions in LLC secondary-side designs.

What is the gate threshold voltage range, and how does it affect drive circuit design?

V_GS(th) is specified from 3.0 V to 4.5 V at I_D = 129 μA. This narrow range ensures consistent turn-on behavior across temperature and process variation. Drive circuits must supply ≥6.9 V plateau voltage to achieve full enhancement and minimize R_DS(on) spread.

Is the D²-PAK (PG-TO263-7) package lead-free and RoHS-compliant?

Yes-the device uses Pb-free lead plating and complies with RoHS Directive 2011/65/EU and halogen-free standards per IEC 61249-2-21. It is also MSL 1 rated per J-STD-020, allowing unlimited floor life and standard reflow profiles without baking.

IPF129N20NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta), 87A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V, 15V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 65A, 15V

Vgs(th) (Max) @ Id:: 4.5V @ 129µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 234W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3

IPF129N20NM6ATMA1 FAQ

1.How can I place an order for IPF129N20NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPF129N20NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPF129N20NM6ATMA1 reliable?

The price and inventory of IPF129N20NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPF129N20NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPF129N20NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPF129N20NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPF129N20NM6ATMA1?

IPF129N20NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPF129N20NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPF129N20NM6ATMA1?

For technical support, including IPF129N20NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPF129N20NM6ATMA1 requirements.

6.How does Aetrix verify that IPF129N20NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPF129N20NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPF129N20NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPF129N20NM6ATMA1?

All IPF129N20NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPF129N20NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPF129N20NM6ATMA1 part is unused and in its original packaging.

Return procedure for IPF129N20NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …