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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI041N12N3GAKSA1

Name: IPI041N12N3GAKSA1
Brand: Infineon Technologies
SKU: IPI041N12N3GAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI041N12N3GAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI041N12N3GAKSA1.pdf

Description:: MOSFET N-CH 120V 120A TO262-3

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Product details

Overview

IPI041N12N3GAKSA1 from Infineon Technologies is a 120 V, 4.1 mΩ N-channel enhancement-mode power MOSFET in PG-TO262-3 (IPAK) package, rated for 120 A continuous drain current at T_C = 100 °C and optimized for high-frequency switching and synchronous rectification in DC-DC converters and motor drives.

For engineers reviewing the IPI041N12N3GAKSA1 datasheet, IPI041N12N3GAKSA1 pinout, IPI041N12N3GAKSA1 application, or IPI041N12N3GAKSA1 equivalent, key selection criteria include R_DS(on) ≤ 4.1 mΩ at V_GS = 10 V, 175 °C maximum junction temperature, gate charge Q_g = 158–211 nC, and thermal resistance R_thJC = 0.5 K/W - all critical for thermally constrained, high-efficiency power stages.

Technical Context

This device employs Infineon's OptiMOSTM3 silicon process, delivering low gate charge × R_DS(on) figure-of-merit (FOM) for reduced switching and conduction losses. Its 120 V V_(BR)DSS rating supports 48 V and 60 V bus systems with margin, while the 175 °C T_j rating enables operation in high-ambient industrial environments without derating.

The MOSFET features a robust body diode with t_rr = 123 ns and Q_rr = 356 nC, enabling reliable synchronous rectification in hard-switched topologies. Gate threshold voltage V_GS(th) is tightly specified (2–4 V), ensuring stable turn-on across temperature and minimizing shoot-through risk in half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - supports 48 V/60 V bus systems with 2× voltage margin for transients
R_DS(on) max	4.1 mΩ at V_GS = 10 V, I_D = 100 A - enables <1.2 W conduction loss at 120 A
I_D cont	120 A at T_C = 100 °C - matches high-current output stages in server PSUs and EV chargers
Q_g	158–211 nC - determines gate driver power requirement and switching speed trade-off
R_thJC	0.5 K/W - allows direct heatsink mounting for efficient thermal path to ambient
T_j max	175 °C - enables full-rated operation in sealed enclosures up to 105 °C ambient
t_rr	123 ns - limits reverse recovery loss during commutation in synchronous buck converters

Pinout & Package

Package: PG-TO262-3 (IPAK), surface-mount variant of TO-220 with isolated tab; thermally enhanced plastic housing with copper leadframe for low R_thJC.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path, electrically connected to exposed metal tab	Primary thermal interface - must be soldered to PCB copper pour or heatsink for R_thJC = 0.5 K/W performance
Source	Reference node for gate drive and current sensing	Low-inductance connection required to minimize V_GS noise and improve switching stability
Gate	Control terminal for channel formation	High-impedance input requiring low-ESR gate resistor (typically 1.6 Ω) to damp ringing per test conditions

Key Features

Feature	Design Value
N-channel normal-level logic	Turns on fully with standard 10 V gate drive - compatible with common PWM controllers and gate drivers
Optimized FOM (Q_g × R_DS(on))	~860 mΩ·nC - reduces total switching + conduction loss vs. legacy MOSFETs in 100–500 kHz range
Robust body diode	Q_rr = 356 nC, t_rr = 123 ns - enables zero-voltage switching (ZVS) assist and reduces EMI in resonant topologies
JEDEC-qualified reliability	Qualified per J-STD-20/JESD22 - validated for automotive-grade temperature cycling and humidity exposure
Pb-free, halogen-free	RoHS-compliant plating and packaging - meets IPC-J-STD-609 Class 1 requirements for green electronics

Applications

Server PSU Primary Switch

Industrial Motor Drive High-Side

Use Scenario: 48 V input, 12 V/200 A output LLC resonant converter in hyperscale data center power supply.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 300–500 kHz with ZVS.

Use Value: 4.1 mΩ R_DS(on) and 123 ns t_rr reduce conduction loss by 22% and recovery loss by 35% vs. predecessor IPB038N12N3G.

Use Scenario: 3-phase inverter stage in 7.5 kW HVAC compressor drive with 600 V DC bus.

IC Role / Device Role / Timing Role: High-side power switch in 6–16 kHz PWM-controlled IGBT/MOSFET half-bridge.

Use Value: 175 °C T_j rating sustains full 120 A current under 85 °C ambient without derating, improving system power density.

Onboard Charger (OBC) Synchronous Rectifier

Telecom 48 V DC-DC Converter

Use Scenario: Secondary-side synchronous rectification in 6.6 kW bidirectional OBC for EVs, operating in CCM and DCM modes.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with adaptive gate timing control.

Use Value: Q_g = 158–211 nC enables precise dead-time control and minimizes cross-conduction risk at 100–200 kHz switching.

Use Scenario: Isolated forward converter in telecom shelf power module delivering 12 V/100 A from 48 V input.

IC Role / Device Role / Timing Role: Primary-side main switch with active clamp snubber.

Use Value: 900 mJ single-pulse avalanche energy rating withstands 100 A inductive load dump events without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 120 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB038N12N3G	R_DS(on) = 3.8 mΩ (TO-263), lower on-resistance but higher Q_g (211 nC)	Better conduction loss, worse switching loss above 200 kHz; requires larger gate driver	Select when thermal budget favors lower R_DS(on) over switching frequency >300 kHz
IPP041N12N3G	Same R_DS(on) and Q_g, but TO-220-3 package with higher R_thJC (0.7 K/W)	Lower cost, easier manual assembly, but limited to <80 A continuous in same footprint	Select for prototyping or low-volume industrial controls where heatsinking is less constrained

Compared with IPB038N12N3G and IPP041N12N3G, IPI041N12N3GAKSA1 delivers optimal balance of low R_DS(on), moderate Q_g, and superior thermal performance in surface-mount form - making it preferred for high-power-density, automated production applications.

Availability

IPI041N12N3GAKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, onboard EV chargers, and telecom DC-DC converters requiring stable component supply and long-term lifecycle support.

Supply support for IPI041N12N3GAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOSTM3 power transistor product line, designed specifically for high-efficiency, high-frequency switching applications in server, telecom, and industrial power conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPI041N12N3GAKSA1 is rated for 120 A continuous drain current at T_C = 100 °C, as confirmed in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (6 cm²) and vertical mounting in still air, per JEDEC JESD51-2 standards.

Is this MOSFET suitable for synchronous rectification in a 400 kHz LLC converter?

Yes - its 4.1 mΩ R_DS(on), 123 ns t_rr, and 356 nC Q_rr are explicitly characterized for synchronous rectification. The low Q_g/R_DS(on) FOM and 175 °C T_j rating ensure stable operation at 400 kHz with minimal thermal rise in well-designed layouts.

Does the device have integrated ESD protection on the gate?

No - the IPI041N12N3GAKSA1 does not include on-die ESD protection. Gate-source voltage is rated only to ±20 V, and external gate protection (e.g., TVS diode or RC snubber) is recommended during handling and in-circuit transient suppression per Infineon Application Note AN2015-04.

What is the thermal resistance from junction to case (R_thJC)?

R_thJC is 0.5 K/W, measured under standard JEDEC test conditions (device mounted on 40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² copper drain pad, vertical orientation, still air). This value is independent of ambient conditions and applies only to the junction-to-case path.

IPI041N12N3GAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 270µA

Gate Charge (Qg) (Max) @ Vgs:: 211 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13800 pF @ 60 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI041N12N3GAKSA1 FAQ

1.How can I place an order for IPI041N12N3GAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI041N12N3GAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI041N12N3GAKSA1 reliable?

The price and inventory of IPI041N12N3GAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI041N12N3GAKSA1 is usually 5 days.

3.What payment methods are accepted for IPI041N12N3GAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI041N12N3GAKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI041N12N3GAKSA1?

IPI041N12N3GAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI041N12N3GAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI041N12N3GAKSA1?

For technical support, including IPI041N12N3GAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI041N12N3GAKSA1 requirements.

6.How does Aetrix verify that IPI041N12N3GAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI041N12N3GAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI041N12N3GAKSA1 meets industry standards.

7.What is the process for return or replacement of IPI041N12N3GAKSA1?

All IPI041N12N3GAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI041N12N3GAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI041N12N3GAKSA1 part is unused and in its original packaging.

Return procedure for IPI041N12N3GAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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