Infineon Technologies IPI045N10N3GXKSA1

Overview

IPI045N10N3GXKSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO262-3 (I²-PAK) package, rated for 100 V V_DS, 4.5 mΩ R_DS(on) at V_GS = 10 V, and 137 A continuous drain current at T_C = 25 °C. It features a low gate charge × R_DS(on) figure-of-merit, 175 °C maximum junction temperature, and is optimized for high-frequency synchronous rectification in DC-DC converters and motor drives.

For engineers reviewing the IPI045N10N3GXKSA1 datasheet, IPI045N10N3GXKSA1 pinout, IPI045N10N3GXKSA1 application, or IPI045N10N3GXKSA1 equivalent, key selection criteria include its 4.5 mΩ on-resistance at 10 V gate drive, 88–117 nC total gate charge, 100 V blocking capability, and thermal resistance of 0.7 K/W (junction-to-case), critical for high-power density power stage design.

Technical Context

This OptiMOS™3 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining fast switching performance: t_d(on) = 27 ns, t_r = 59 ns, t_d(off) = 48 ns, and t_f = 14 ns under 50 V V_DD, 100 A ID, and 1.6 Ω gate resistance conditions. Its gate plateau voltage is 4.7 V, enabling robust turn-on with standard 5 V logic-level drivers.

The integrated body diode exhibits V_SD = 1.0–1.2 V at 100 A and T_j = 25 °C, with t_rr = 68 ns and Q_rr = 135 nC under 50 V reverse bias and 100 A forward current - characteristics essential for minimizing commutation losses in synchronous buck topologies.

Key Specifications

Pinout & Package

Package: PG-TO262-3 (I²-PAK), surface-mount with isolated tab (Drain-connected). Standard lead-free, RoHS-compliant construction per JEDEC J-STD-20/JESD22.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 100 V MOSFET applications.

Compared with IPB045N10N3 G, IPI045N10N3GXKSA1 offers tighter thermal resistance (0.7 vs. 0.8 K/W) and superior reflow compatibility due to I²-PAK's isolated tab; versus STL220N10F7, it trades 2.3 mΩ lower R_DS(on) for 30–50 nC lower Q_g, favoring high-frequency efficiency over peak current capability.

Availability

IPI045N10N3GXKSA1 is available at Aetrix Electronics and suitable for server VRM power stages, industrial motor drive inverters, telecom DC-DC bricks, and EV onboard charger PFC stages requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for IPI045N10N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

This device belongs to the OptiMOS™3 family - engineered specifically for high-efficiency, high-power-density power conversion in server, telecom, and industrial motor control applications where low R_DS(on) and fast switching are co-optimized.

FAQ

Is IPI045N10N3GXKSA1 suitable for gate-driving with 5 V logic-level microcontrollers?

Yes - its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 3.5 V, and it delivers full 137 A current capability at V_GS = 5 V (R_DS(on) ≈ 7.7 mΩ). However, for lowest conduction loss, 10 V gate drive is recommended to achieve 4.5 mΩ R_DS(on). A level-shifting gate driver is advised for high-side configurations.

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies continuous drain current derating begins at T_C = 100 °C, where I_D drops to 105 A. The absolute maximum case temperature is not explicitly limited, but junction temperature must remain ≤175 °C. With R_thJC = 0.7 K/W, sustained 214 W power dissipation requires T_C ≤ 25 °C - practical operation limits T_C to ≤100–110 °C depending on heatsink design and ambient conditions.

Does this MOSFET include an integrated ESD protection diode on the gate?

No - the datasheet does not specify integrated gate ESD protection. The gate-source voltage rating is ±20 V, and IGSS is specified up to 100 nA at V_GS = 20 V. External gate protection (e.g., Zener clamp or RC snubber) is recommended in systems exposed to handling or system-level ESD events per IEC 61000-4-2.

Can IPI045N10N3GXKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increases with T_j) enables inherent current sharing. Diagram 9 shows R_DS(on) rising ~20% from −60 °C to 175 °C, promoting thermal stability. For parallel operation, matched gate drive layout, identical source inductance, and individual gate resistors (≥1.6 Ω) are required to ensure dynamic current balance.