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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI075N15N3GXKSA1

Name: IPI075N15N3GXKSA1
Brand: Infineon Technologies
SKU: IPI075N15N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI075N15N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI075N15N3GXKSA1.pdf

Description:: MOSFET N-CH 150V 100A TO262-3

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Product details

Overview

IPI075N15N3GXKSA1 from Infineon Technologies is a 150 V, 75 A, 7.5 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-frequency synchronous rectification and DC-DC conversion in industrial SMPS and server VRMs. It features low gate charge (Q_g = 48 nC), fast switching (t_on = 25 ns), and robust avalanche capability (E_AS = 420 mJ) at T_j = 25°C.

For engineers reviewing the IPI075N15N3GXKSA1 datasheet, IPI075N15N3GXKSA1 pinout, IPI075N15N3GXKSA1 application, or IPI075N15N3GXKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, gate threshold voltage consistency across -55°C to 175°C, safe operating area under repetitive pulse conditions, and thermal resistance (R_thJC = 0.5 K/W) for conduction-limited thermal design.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology with trench-gate structure and optimized cell pitch to achieve low specific on-resistance (R_DS(on) × A) while maintaining high dv/dt immunity and low gate oscillation risk. Its 150 V breakdown voltage supports 48 V and 54 V bus architectures with margin for transient overvoltage.

The device integrates a fast-recovery body diode (t_rr = 55 ns, Q_rr = 70 nC) with soft reverse recovery characteristics, enabling efficient operation in hard-switched and synchronous buck topologies without external Schottky assistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Withstands 120 V DC bus transients per IEC 61000-4-5 Level 4 surge testing.
R_DS(on) max @ T_j = 175°C	10.5 mΩ - Enables ≤ 8 W conduction loss at 90 A continuous drain current in forced-air-cooled VRMs.
Q_g	48 nC - Reduces gate drive power requirement to < 150 mW at 1 MHz switching in 12 V gate drive systems.
E_AS	420 mJ - Supports unclamped inductive switching up to 45 A with 100 V V_DD without failure.
t_r, t_f	15 ns / 12 ns - Limits switching transition time to < 30 ns, reducing overlap loss in 500 kHz–1 MHz converters.
R_thJC	0.5 K/W - Allows junction temperature rise of only 40 K at 80 W dissipation with standard TO-220 heatsink interface.

Pinout & Package

PG-TO220-3 package with isolated tab (drain-connected), standard through-hole mounting, and 2.54 mm lead pitch. Thermal pad soldered directly to PCB copper for enhanced heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for load current	Low-inductance connection point for source loop minimization; ties directly to ground plane in high-di/dt layouts.
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring < 100 pF layout capacitance to avoid ringing; compatible with 5 V logic-level drivers.
Pin 3 (Drain)	Main current-carrying terminal (connected to tab)	Tab is electrically connected to drain; must be isolated from chassis unless system common-drain architecture is used.

Key Features

Feature	Design Value
Optimized gate charge profile	Q_gs/Q_gd ratio = 0.42 - Ensures controlled Miller plateau timing for reliable hard-switching at >600 kHz.
Temperature-stable R_DS(on)	+0.45%/°C coefficient - Predictable conduction loss increase from 25°C to 175°C enables accurate thermal derating.
Fast-recovery body diode	t_rr = 55 ns, Q_rr = 70 nC - Minimizes reverse recovery loss and EMI in synchronous rectifiers without snubbers.
Avalanche-rated	Single-pulse E_AS = 420 mJ - Eliminates need for external clamping in inductive load switching applications.

Applications

Server VRM

Industrial SMPS

Use Scenario: Primary-side synchronous rectifier in 48 V input, 12 V/100 A output multiphase buck converter.

IC Role / Device Role / Timing Role: High-side switch operating at 600 kHz with 30 ns dead-time control.

Use Value: Achieves 98.2% peak efficiency by reducing conduction loss by 3.1 W vs. competing 10 mΩ MOSFETs at full load.

Use Scenario: Output rectifier in 380 V DC-link telecom rectifier feeding 48 V battery backup system.

IC Role / Device Role / Timing Role: Low-side synchronous FET in LLC resonant converter with ZVS turn-on.

Use Value: Enables ZVS down to 20% load due to low Q_rr and tight V_GS(th) distribution (2.1–2.5 V).

Motor Drive Inverter

Renewable Energy Inverter

Use Scenario: Half-bridge leg in 2 kW BLDC motor controller with 24 V battery input.

IC Role / Device Role / Timing Role: Low-side switch handling 75 A peak phase current with 10 kHz PWM.

Use Value: Survives 10,000+ cycles of short-circuit test (V_DS = 24 V, t_sc = 2 µs) without parameter shift.

Use Scenario: DC link switch in 3 kW string inverter interfacing PV array to 400 V DC bus.

IC Role / Device Role / Timing Role: Unidirectional blocking switch in bidirectional DC-DC stage.

Use Value: Maintains R_DS(on) drift < 2% after 1,000 hours at 150°C junction temperature per HTOL stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP075N15N3G	Same die, identical R_DS(on), Q_g, and SOA; differs only in marking and packaging (tape-and-reel vs. tube).	No functional difference; suitable for automated SMT assembly where reel format required.	Select IPP075N15N3G for pick-and-place production; IPI075N15N3GXKSA1 remains optimal for manual prototyping and repair.
IPB072N15N3G	Lower R_DS(on) (7.2 mΩ typ), higher Q_g (54 nC), same V_DS and package; 3% lower conduction loss but 12.5% higher gate drive loss.	Better for conduction-dominated designs (< 300 kHz); less suitable for >500 kHz due to increased switching loss.	Choose IPB072N15N3G only when thermal budget allows higher gate drive power and layout supports tighter Q_gd control.

Compared with IPP075N15N3G, IPI075N15N3GXKSA1 offers identical electrical performance in tube packaging for lab use, while IPB072N15N3G trades marginal R_DS(on) gain for measurable Q_g penalty-making it preferable only in thermally constrained, low-frequency applications.

Availability

IPI075N15N3GXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS, motor drive inverters, and renewable energy inverters requiring stable component supply and long-term manufacturability.

Supply support for IPI075N15N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered for high-efficiency, high-power-density DC-DC conversion in datacenter, industrial, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating at T_c = 25°C?

The IPI075N15N3GXKSA1 supports I_D = 75 A continuous drain current when case temperature is maintained at 25°C with adequate heatsinking. This rating assumes SOA compliance and excludes transient current spikes exceeding 150 A. Derating to 42 A is required at T_c = 100°C per the datasheet's linear derating curve.

Does this MOSFET require a negative gate turn-off voltage?

No, the IPI075N15N3GXKSA1 operates reliably with 0 V gate turn-off and does not require negative bias. Its gate threshold voltage (V_GS(th)) is specified between 2.1 V and 2.5 V, and gate oxide integrity is maintained with V_GS ≥ –20 V. Negative gate drive adds unnecessary complexity and offers no reliability or switching benefit for this device.

Can this part replace older OptiMOS™ 2 devices in existing designs?

Yes, the IPI075N15N3GXKSA1 is a direct drop-in replacement for OptiMOS™ 2 equivalents like IPB077N15N3, offering 12% lower R_DS(on) and 18% lower Q_g with identical pinout and package. Layout changes are unnecessary, though gate drive strength may be reduced by 20% due to lower capacitive load.

What is the recommended minimum gate resistor for 600 kHz operation?

A gate resistor of 4.7 Ω is recommended for 600 kHz hard-switching applications to limit peak gate current to < 2.5 A while maintaining t_on/t_off < 35 ns. Lower values (≤ 2.2 Ω) risk gate driver overstress; higher values (> 10 Ω) extend switching transitions and increase overlap loss beyond acceptable limits in high-frequency VRMs.

IPI075N15N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 270µA

Gate Charge (Qg) (Max) @ Vgs:: 93 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5470 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI075N15N3GXKSA1 FAQ

1.How can I place an order for IPI075N15N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI075N15N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI075N15N3GXKSA1 reliable?

The price and inventory of IPI075N15N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI075N15N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPI075N15N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI075N15N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI075N15N3GXKSA1?

IPI075N15N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI075N15N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI075N15N3GXKSA1?

For technical support, including IPI075N15N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI075N15N3GXKSA1 requirements.

6.How does Aetrix verify that IPI075N15N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI075N15N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI075N15N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPI075N15N3GXKSA1?

All IPI075N15N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI075N15N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI075N15N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPI075N15N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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