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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI076N12N3GAKSA1

Name: IPI076N12N3GAKSA1
Brand: Infineon Technologies
SKU: IPI076N12N3GAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI076N12N3GAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI076N12N3GAKSA1.pdf

Description:: MOSFET N-CH 120V 100A TO262-3

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Product details

Overview

IPI076N12N3GAKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET optimized for high-frequency switching and synchronous rectification in DC-DC converters and motor drives. It features a 120 V V_DS, 7.6 mΩ R_DS(on) max at V_GS = 10 V and I_D = 100 A, 175 °C maximum junction temperature, and PG-TO220-3 package with isolated drain tab.

For engineers reviewing the IPI076N12N3GAKSA1 datasheet, IPI076N12N3GAKSA1 pinout, IPI076N12N3GAKSA1 application, or IPI076N12N3GAKSA1 equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), robust avalanche energy rating (230 mJ), and thermal resistance of 0.8 K/W (junction-to-case).

Technical Context

This MOSFET employs silicon-based planar trench technology with optimized cell pitch and gate oxide design to achieve high current density and fast switching. Its gate threshold voltage (2–4 V) ensures reliable turn-on with standard 10 V gate drivers, while the low output capacitance (C_oss = 632–841 pF) minimizes switching losses in hard-switched topologies.

The integrated body diode exhibits low forward voltage (V_SD = 1.0–1.2 V at 100 A, 25 °C) and fast reverse recovery (t_rr = 122 ns, Q_rr = 291 nC), enabling efficient synchronous rectification without external Schottky diodes in buck and LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - supports 48 V and 60 V bus systems with 2× safety margin against transients
R_DS(on) max	7.6 mΩ at V_GS = 10 V, I_D = 100 A - enables <1.5 W conduction loss at full load in 100 A applications
Q_g	76–101 nC - determines gate drive power requirement and switching speed with 1.6 Ω external resistor
E_AS	230 mJ - withstands single-pulse inductive energy without failure in motor control or relay driving
R_thJC	0.8 K/W - allows 188 W continuous dissipation at T_C = 25 °C with minimal heatsink interface resistance
t_rr	122 ns - reduces cross-conduction loss and EMI in synchronous rectifier operation
V_GS(th)	2–4 V - compatible with standard logic-level and microcontroller GPIO-driven gate circuits

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated drain tab, RoHS-compliant lead plating). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires ≤20 V absolute max; low input capacitance (C_iss = 4990–6640 pF) eases driver selection
Pin 2 (Drain)	High-side power path	Exposed copper tab; electrically isolated from package body; primary heat transfer path to heatsink
Pin 3 (Source)	Reference node	Common return for gate drive and load current; connects to PCB ground plane or low-side switch source

Key Features

Feature	Design Value
N-channel normal-level operation	Turns on fully with 10 V gate drive-eliminates need for bootstrap or level-shift circuitry in low-side switches
Low gate charge × R_DS(on) FOM	~575 mΩ·nC - balances conduction and switching losses for optimal efficiency in 100–500 kHz SMPS
175 °C rated junction temperature	Enables operation in sealed enclosures or high ambient environments without derating below 100 A continuous
JEDEC-qualified reliability	Validated per J-STD-20 and JESD22 for automotive and industrial power stages requiring long-term stability
Integrated fast-recovery body diode	Q_rr = 291 nC and t_rr = 122 ns support synchronous rectification without external diode in buck converters

Applications

Server VRM

Industrial Motor Drive

Use Scenario: High-current CPU/GPU voltage regulation in 1U rack servers with strict thermal constraints.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter delivering up to 100 A per phase.

Use Value: 7.6 mΩ R_DS(on) and 0.8 K/W R_thJC enable >95% efficiency at 40 A load with <60 °C case rise on standard heatsink.

Use Scenario: Inverter stage for 3 kW BLDC motor in HVAC compressors and pump controllers.

IC Role / Device Role / Timing Role: Half-bridge low-side switch operating at 20 kHz PWM with 100 A peak phase current.

Use Value: 230 mJ avalanche energy rating prevents failure during inductive flyback events; 175 °C rating sustains operation under 85 °C ambient.

Telecom PSU

EV Onboard Charger

Use Scenario: Secondary-side synchronous rectification in 3.3 kW telecom rectifier modules.

IC Role / Device Role / Timing Role: Output rectifier in LLC resonant converter with 120 V output bus.

Use Value: 120 V V_DS provides margin over 100 V nominal output; fast t_rr (122 ns) suppresses shoot-through risk in zero-voltage switching.

Use Scenario: DC-DC isolation stage in bidirectional OBC converting 400 V battery to 12 V/48 V auxiliary supply.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 100–200 kHz.

Use Value: Low C_oss (632–841 pF) and Q_gd (19 nC) reduce capacitive turn-off loss and improve ZVS behavior across wide load range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB076N12N3 G	PG-TO263-3 surface-mount package; identical electrical specs and thermal performance	Suitable for automated SMT assembly; requires larger PCB copper area for thermal management	Select for space-constrained, high-volume production where reflow compatibility is required
IPP080N12N3 G	Higher R_DS(on) (8.0 mΩ), same V_DS, lower Q_g (69 nC), same package	Better suited for lower-current, higher-frequency designs where switching loss dominates conduction loss	Select when optimizing for 300–600 kHz operation with <80 A average current

Compared with IPB076N12N3 G, IPI076N12N3GAKSA1 offers through-hole mounting and simpler thermal interface; versus IPP080N12N3 G, it delivers lower conduction loss at the cost of slightly higher gate drive demand-critical for high-current, medium-frequency power stages.

Availability

IPI076N12N3GAKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and EV onboard chargers requiring stable component supply and long-lifecycle support.

Supply support for IPI076N12N3GAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the OptiMOSTM3 power transistor family, engineered for high-efficiency, high-reliability switching in industrial and automotive power conversion systems up to 120 V bus voltage.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current I_D is 76 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, and assumes proper heatsinking with 0.8 K/W junction-to-case thermal resistance.

Is the drain tab electrically isolated from the package body?

Yes, the drain tab in the PG-TO220-3 package is electrically isolated from the plastic body and mounting hardware. This isolation enables direct mounting to a common heatsink without requiring insulating pads or shoulder washers, simplifying thermal design and reducing thermal interface resistance.

Does this MOSFET have avalanche capability, and how is it rated?

Yes, IPI076N12N3GAKSA1 is rated for single-pulse avalanche energy E_AS = 230 mJ under test conditions of I_D = 100 A, R_GS = 25 Ω, and T_j = 25 °C. This rating is validated per JEDEC standards and supports reliable operation in inductive switching applications such as motor drives and relay control.

What is the typical gate plateau voltage, and why does it matter?

The typical gate plateau voltage V_plateau is 5.4 V, observed during Miller region transition in gate charge curves. This value indicates the threshold at which the MOSFET enters saturation and begins conducting significant drain current; it informs gate driver selection and helps predict switching timing and overlap losses in bridge configurations.

IPI076N12N3GAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.6mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 101 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6640 pF @ 60 V

FET Feature:: -

Power Dissipation (Max):: 188W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI076N12N3GAKSA1 FAQ

1.How can I place an order for IPI076N12N3GAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI076N12N3GAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI076N12N3GAKSA1 reliable?

The price and inventory of IPI076N12N3GAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI076N12N3GAKSA1 is usually 5 days.

3.What payment methods are accepted for IPI076N12N3GAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI076N12N3GAKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI076N12N3GAKSA1?

IPI076N12N3GAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI076N12N3GAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI076N12N3GAKSA1?

For technical support, including IPI076N12N3GAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI076N12N3GAKSA1 requirements.

6.How does Aetrix verify that IPI076N12N3GAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI076N12N3GAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI076N12N3GAKSA1 meets industry standards.

7.What is the process for return or replacement of IPI076N12N3GAKSA1?

All IPI076N12N3GAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI076N12N3GAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI076N12N3GAKSA1 part is unused and in its original packaging.

Return procedure for IPI076N12N3GAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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