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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI076N15N5AKSA1

Name: IPI076N15N5AKSA1
Brand: Infineon Technologies
SKU: IPI076N15N5AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI076N15N5AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI076N15N5AKSA1.pdf

Description:: MV POWER MOS

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Product details

Overview

IPI076N15N5AKSA1 from Infineon Technologies is a 150 V, 7.6 mΩ N-channel enhancement-mode MOSFET in PG-TO262-3 (I²-PAK) package, optimized for high-frequency switching and synchronous rectification in DC-DC converters and motor drives. It delivers 112 A continuous drain current at T_C = 25 °C, features 96 nC reverse recovery charge (Q_rr), and supports 175 °C junction operation.

For engineers reviewing the IPI076N15N5AKSA1 datasheet, IPI076N15N5AKSA1 pinout, IPI076N15N5AKSA1 application, or IPI076N15N5AKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, gate charge × R_DS(on) figure-of-merit, Q_rr-limited diode recovery behavior, and thermal resistance (R_thJC = 0.4–0.7 K/W) for high-power density designs.

Technical Context

This OptiMOS™5 device uses trench-gate superjunction technology to achieve low conduction loss and fast switching with minimal gate drive energy. Its 150 V V_DS rating and 7.6 mΩ max R_DS(on) at V_GS = 10 V enable efficient operation in 48 V industrial bus and 100 V solar string applications.

The integrated body diode exhibits low Q_rr (96–192 nC) and short t_rr (69–138 ns), reducing switching losses during hard-commutation and enabling robust synchronous rectification without external Schottky diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Withstands up to 150 V drain-source blocking voltage, suitable for 100 V-class power systems with margin.
R_DS(on), max	7.6 mΩ at V_GS = 10 V, T_j = 25 °C - Enables <1 W conduction loss at 112 A, critical for high-current DC-DC stages.
Q_rr	96 nC typical - Reduces turn-on loss in synchronous rectifiers and limits EMI from diode reverse recovery.
I_D, cont.	112 A at T_C = 25 °C - Supports high-current output stages in server VRMs and telecom power supplies.
R_thJC	0.4–0.7 K/W - Allows direct heatsink mounting with predictable thermal path for thermal design validation.
Q_g	49–61 nC - Determines gate driver sizing and switching speed trade-off in 100–500 kHz SMPS designs.
T_j max	175 °C - Enables operation in harsh environments such as industrial motor drives and automotive under-hood modules.

Pinout & Package

Package: PG-TO262-3 (I²-PAK), with exposed drain tab for thermal and electrical connection. Tab is electrically connected to Drain (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires ≤20 V gate-source voltage; 1.1–1.7 Ω internal gate resistance limits dV/dt-induced ringing.
Pin 2 / Tab	Drain	Main high-side power terminal; tab provides low-inductance, high-current path and primary thermal interface to heatsink.
Pin 3	Source	Reference node for gate drive and current sensing; connects to low-side return path in half-bridge configurations.

Key Features

Feature	Design Value
Low gate charge × R_DS(on) FOM	Enables high-efficiency, high-frequency operation (>300 kHz) with reduced gate driver power and heat.
Very low Q_rr (96 nC)	Minimizes switching loss and voltage overshoot during diode commutation in synchronous buck and LLC topologies.
175 °C rated junction temperature	Supports compact thermal design in sealed enclosures and high-ambient industrial environments without derating.
Pb-free, halogen-free, RoHS-compliant	Meets IPC-J-STD-020 reflow profile requirements and environmental compliance for global OEM production.

Applications

Server VRM Phase Legs

Industrial Motor Drive Half-Bridge

Use Scenario: High-current, high-efficiency 48 V input VRM delivering >200 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; switched at 300–600 kHz.

Use Value: 7.6 mΩ R_DS(on) and 96 nC Q_rr reduce conduction and commutation losses, improving VRM efficiency by ≥0.8% at full load.

Use Scenario: 10–30 kW variable-frequency drive for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side switch in three-phase inverter leg; operated with 5–15 kHz PWM and active braking.

Use Value: 175 °C rating and 130 mJ single-pulse avalanche energy ensure reliability during overvoltage transients and regenerative braking events.

Solar String Optimizer

Telecom 48 V DC-DC Converter

Use Scenario: Module-level MPPT unit operating across -40 to +85 °C ambient with 100 V PV string voltage.

IC Role / Device Role / Timing Role: Buck-boost switch in bidirectional DC-DC stage; duty cycle varies dynamically with irradiance.

Use Value: Stable R_DS(on) vs. temperature (≤12 mΩ at 125 °C) maintains consistent efficiency across wide thermal range.

Use Scenario: Isolated 48 V to 12 V/54 A telecom rectifier with strict efficiency and footprint constraints.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; driven at 100–200 kHz.

Use Value: 0.4 K/W R_thJC enables direct mounting to cold plate, achieving >96% peak efficiency without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N15F7	R_DS(on) = 8.5 mΩ (max), Q_rr = 120 nC, R_thJC = 0.55 K/W	Higher conduction loss and slower diode recovery limit efficiency in >300 kHz designs	Preferred where cost sensitivity outweighs 0.3–0.5% efficiency gain and thermal margin is ample.
IXFH110N15X3	R_DS(on) = 7.2 mΩ (max), Q_rr = 145 nC, R_thJC = 0.45 K/W, TO-247 package	Larger footprint and higher Q_rr increase layout complexity and EMI filtering burden	Chosen when higher surge current capability (I_D,pulse = 480 A) justifies larger package and thermal interface redesign.

Compared with STP110N15F7 and IXFH110N15X3, IPI076N15N5AKSA1 offers the best balance of low Q_rr, tight R_DS(on) distribution, and compact I²-PAK thermal performance-making it optimal for space-constrained, high-frequency, high-reliability power stages.

Availability

IPI076N15N5AKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, solar string optimizers, and telecom DC-DC converters requiring stable component supply and long-term manufacturability.

Supply support for IPI076N15N5AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™5 family, engineered for high-efficiency, high-frequency power conversion in data center, renewable energy, and factory automation systems.

FAQ

What is the maximum gate-source voltage rating for IPI076N15N5AKSA1?

The absolute maximum gate-source voltage is ±20 V. Exceeding this risks permanent gate oxide damage. Recommended operating range is –10 V to +15 V for reliable turn-off and immunity to Miller-induced false triggering during high dV/dt switching events.

Does IPI076N15N5AKSA1 have an integrated body diode, and what are its key parameters?

Yes-it features a monolithic, fast-recovery body diode with typical forward voltage of 0.89 V at 56 A and 25 °C, reverse recovery charge Q_rr of 96 nC, and reverse recovery time t_rr of 69 ns under standard test conditions (V_R = 75 V, dI_F/dt = 100 A/µs).

Can IPI076N15N5AKSA1 be used in avalanche mode, and what is its rated single-pulse energy?

Yes-it is fully rated for repetitive and single-pulse avalanche operation. The datasheet specifies 130 mJ single-pulse avalanche energy (E_AS) at I_D = 100 A with R_GS = 25 Ω, validated per JEDEC JESD22-A110.

Is the PG-TO262-3 package of IPI076N15N5AKSA1 compatible with standard TO-262 footprints on PCBs?

Yes-the PG-TO262-3 (I²-PAK) has identical mechanical dimensions and pad layout to industry-standard TO-262-3, including 3.8 mm lead pitch and 10.16 mm × 15.24 mm outline. The exposed drain tab requires matching copper area and thermal via pattern per Infineon's recommended land pattern.

IPI076N15N5AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 112A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 7.6mOhm @ 56A, 10V

Vgs(th) (Max) @ Id:: 4.6V @ 160µA

Gate Charge (Qg) (Max) @ Vgs:: 61 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4700 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI076N15N5AKSA1 FAQ

1.How can I place an order for IPI076N15N5AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI076N15N5AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI076N15N5AKSA1 reliable?

The price and inventory of IPI076N15N5AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI076N15N5AKSA1 is usually 5 days.

3.What payment methods are accepted for IPI076N15N5AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI076N15N5AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI076N15N5AKSA1?

IPI076N15N5AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI076N15N5AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI076N15N5AKSA1?

For technical support, including IPI076N15N5AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI076N15N5AKSA1 requirements.

6.How does Aetrix verify that IPI076N15N5AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI076N15N5AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI076N15N5AKSA1 meets industry standards.

7.What is the process for return or replacement of IPI076N15N5AKSA1?

All IPI076N15N5AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI076N15N5AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI076N15N5AKSA1 part is unused and in its original packaging.

Return procedure for IPI076N15N5AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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