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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI111N15N3GAKSA1

Name: IPI111N15N3GAKSA1
Brand: Infineon Technologies
SKU: IPI111N15N3GAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI111N15N3GAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI111N15N3GAKSA1.pdf

Description:: MOSFET N-CH 150V 83A TO262-3

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Product details

Overview

IPI111N15N3GAKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO263 (D²PAK) package, rated for 150 V V_DS, 83 A continuous drain current at T_C = 25 °C, and 10.8 mΩ max R_DS(on) at V_GS = 10 V. It features 175 °C maximum junction temperature, halogen-free RoHS-compliant plating, and is optimized for high-frequency switching in DC-DC converters and synchronous rectification in server PSUs.

For engineers reviewing the IPI111N15N3GAKSA1 datasheet, IPI111N15N3GAKSA1 pinout, IPI111N15N3GAKSA1 application, or IPI111N15N3GAKSA1 equivalent, key selection criteria include its low gate charge × R_DS(on) figure-of-merit (FOM), robust avalanche energy rating (330 mJ), and thermal resistance of 0.7 K/W (junction-to-case), critical for thermally constrained high-efficiency power stages.

Technical Context

This MOSFET employs a trench-based OptiMOSTM3 process to achieve low R_DS(on) while maintaining fast switching performance: C_iss = 3230 pF, C_oss = 378 pF, and t_r = 35 ns with R_G = 1.6 Ω. Its gate threshold voltage (V_GS(th)) ranges from 2–4 V at 160 µA, enabling reliable turn-on with standard 10 V gate drivers.

The integrated body diode exhibits t_rr = 132 ns and Q_rr = 415 nC under V_R = 75 V, I_F = 83 A, di/dt = 100 A/µs conditions - parameters directly influencing commutation losses in synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	150 V - supports 12 V and 48 V input bus architectures with margin for transient overvoltage
R_DS(on) max	10.8 mΩ @ V_GS = 10 V, I_D = 83 A - enables <1 W conduction loss at 50 A in 48 V systems
Q_g total	41–55 nC - determines gate drive power and switching speed trade-off in hard-switched SMPS
E_AS	330 mJ - provides single-pulse avalanche ruggedness for inductive load switching without snubbers
T_j max	175 °C - allows operation in high-ambient environments such as telecom rectifiers and industrial motor drives
R_thJC	0.7 K/W - defines minimum heatsink requirement for 214 W P_tot dissipation at T_C = 25 °C
Q_rr	415 nC - quantifies reverse recovery charge contributing to shoot-through risk and EMI in synchronous rectification

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, isolated drain tab, lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane for thermal and electrical return path
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring low-inductance routing to minimize ringing during fast switching
Pin 3 (Drain)	Power output / high-side connection	Exposed copper tab - must be soldered to large copper area (≥6 cm²) for thermal management per JEDEC standards

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	~470 nC·mΩ - balances switching loss and conduction loss in 100–500 kHz DC-DC converters
175 °C operation capability	Enables derating-free design in sealed enclosures up to 105 °C ambient with proper heatsinking
Low Q_gd/Q_g ratio	~17% (7 nC / 41 nC) - improves Miller immunity and reduces risk of false turn-on in high-dV/dt environments
JEDEC-qualified reliability	Qualified per J-STD-20 (reflow) and JESD22 (HTOL, TC) for industrial and telecom applications

Applications

Server PSU Synchronous Rectification

Industrial DC-DC Converter

Use Scenario: Secondary-side rectification in 48 V input, 12 V output LLC resonant converter for AI server racks.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; switched by controller's complementary PWM signal.

Use Value: Reduces conduction loss by >60% vs. 120 V Schottky, improving full-load efficiency from 94.2% to 95.8% at 2 kW.

Use Scenario: High-current step-down regulator in programmable logic controller (PLC) power module.

IC Role / Device Role / Timing Role: Main switch in 200 kHz hard-switched buck stage delivering 20 A at 5 V.

Use Value: Enables compact heatsink design due to 0.7 K/W R_thJC and 10.8 mΩ R_DS(on), reducing board area by 35% vs. TO-220 alternative.

Telecom Rectifier Module

EV Onboard Charger (OBC) Auxiliary Supply

Use Scenario: Primary-side switch in 3.3 kW front-end PFC stage operating at 65 kHz.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in continuous conduction mode (CCM) boost topology.

Use Value: Achieves 98.7% peak PFC efficiency with t_r = 35 ns and Q_sw = 16 nC, minimizing gate driver losses.

Use Scenario: Isolated auxiliary supply (12 V @ 3 A) powered from 400 V DC-link in bidirectional OBC.

IC Role / Device Role / Timing Role: Active clamp switch in flyback-derived active-clamp forward converter.

Use Value: Withstands 150 V blocking and 330 mJ avalanche energy, eliminating need for external clamping components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP111N15N3GXKSA1	Same die, PG-TO220-3 package; R_thJC = 0.9 K/W; higher thermal resistance than TO263 variant	Better suited for through-hole prototyping or lower-power (<1.5 kW) designs with forced-air cooling	Select when mechanical mounting constraints require through-hole or when cost sensitivity outweighs thermal performance needs
IPB108N15N3GXKSA1	Lower R_DS(on) (10.5 mΩ typ), same V_DS; 0.3 mΩ lower on-resistance but identical FOM and thermal specs	Preferred for ultra-high-efficiency 48 V systems where <0.1% efficiency gain justifies minor cost increase	Choose when optimizing for lowest possible conduction loss at 83 A, especially in parallel configurations

Compared with IPP111N15N3GXKSA1 and IPB108N15N3GXKSA1, IPI111N15N3GAKSA1 delivers optimal thermal performance (0.7 K/W) in surface-mount form factor while maintaining identical gate drive requirements and avalanche ruggedness - making it the preferred choice for space-constrained, high-power-density applications.

Availability

IPI111N15N3GAKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply and long-term lifecycle support.

Supply support for IPI111N15N3GAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the OptiMOSTM3 power transistor family, engineered specifically for high-efficiency, high-frequency switching in server, telecom, and industrial power conversion systems.

FAQ

What is the maximum continuous drain current for IPI111N15N3GAKSA1 at 100 °C case temperature?

The maximum continuous drain current is 59 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PG-TO263 package under realistic heatsink conditions and must be applied in thermal design calculations for sustained operation.

Does IPI111N15N3GAKSA1 have an integrated body diode, and what are its key characteristics?

Yes, it includes a monolithic body diode with I_S = 83 A continuous forward current, V_SD = 1.0–1.2 V at 83 A and 25 °C, t_rr = 132 ns, and Q_rr = 415 nC. These values are measured under standardized conditions (V_R = 75 V, di/dt = 100 A/µs) and directly impact synchronous rectifier performance and EMI generation.

Is IPI111N15N3GAKSA1 suitable for avalanche-rated applications, and what is its single-pulse rating?

Yes, it is fully qualified for repetitive and single-pulse avalanche operation with E_AS = 330 mJ at I_D = 83 A and R_GS = 25 Ω. This rating is validated per JEDEC JESD22-A110 and supports use in inductive switching circuits without external snubbers, provided layout minimizes stray inductance.

What is the gate plateau voltage, and why is it important for gate driver selection?

The gate plateau voltage is 5.7 V, measured during the Miller region of turn-on. This value determines the minimum gate drive voltage required to sustain full enhancement and avoid operation in the linear region. Drivers must supply ≥10 V to ensure robust noise margin and complete turn-on within specified t_d(on) and t_r.

IPI111N15N3GAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 83A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 11.1mOhm @ 83A, 10V

Vgs(th) (Max) @ Id:: 4V @ 160µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3230 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI111N15N3GAKSA1 FAQ

1.How can I place an order for IPI111N15N3GAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI111N15N3GAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI111N15N3GAKSA1 reliable?

The price and inventory of IPI111N15N3GAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI111N15N3GAKSA1 is usually 5 days.

3.What payment methods are accepted for IPI111N15N3GAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI111N15N3GAKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI111N15N3GAKSA1?

IPI111N15N3GAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI111N15N3GAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI111N15N3GAKSA1?

For technical support, including IPI111N15N3GAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI111N15N3GAKSA1 requirements.

6.How does Aetrix verify that IPI111N15N3GAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI111N15N3GAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI111N15N3GAKSA1 meets industry standards.

7.What is the process for return or replacement of IPI111N15N3GAKSA1?

All IPI111N15N3GAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI111N15N3GAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI111N15N3GAKSA1 part is unused and in its original packaging.

Return procedure for IPI111N15N3GAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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