Infineon Technologies IPI120N04S401AKSA1

Overview

IPI120N04S401AKSA1 from Infineon Technologies is a 40 V, 120 A N-channel enhancement-mode MOSFET in PG-TO262-3-1 package, AEC-qualified for automotive powertrain and body electronics, with 1.5 mΩ max R_DS(on) at 10 V_GS, 175 °C operating temperature, and 100% single-pulse avalanche tested for robustness in motor control and DC-DC converter high-side switching.

For engineers reviewing the IPI120N04S401AKSA1 datasheet, IPI120N04S401AKSA1 pinout, IPI120N04S401AKSA1 application, or IPI120N04S401AKSA1 equivalent, key selection criteria include its 0.8 K/W junction-to-case thermal resistance, 135–176 nC total gate charge, 10770–14000 pF input capacitance, and SMD-compatible thermal performance on 6 cm² PCB copper area.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching speed. Its 5.3 V gate plateau voltage and 57–74 nC gate-to-source charge support efficient gate driver design for hard-switched topologies.

The integrated body diode exhibits 0.9–1.3 V forward voltage at 100 A and 25 °C, with 64 ns reverse recovery time and 88 nC reverse recovery charge-enabling use in synchronous rectification and freewheeling paths without external diodes in many 12 V/24 V automotive systems.

Key Specifications

Pinout & Package

PG-TO262-3-1 is a straight-leaded variant of TO-262 (I²PAK), with isolated tab (drain), three leads: Gate (G), Drain (D), Source (S). The metal tab is electrically connected to the drain terminal and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with IPB120N04S4-01 and IPP120N04S4-01, IPI120N04S401AKSA1 offers balanced thermal performance (0.8 K/W) and mechanical fit for automated through-hole assembly in automotive ECUs-making it optimal for volume production where TO262's straight leads simplify pick-and-place and wave soldering.

Availability

IPI120N04S401AKSA1 is available at Aetrix Electronics and suitable for automotive powertrain control, EPS motor drives, and 12 V/48 V DC-DC converters requiring stable component supply across multi-year vehicle production lifecycles.

Supply support for IPI120N04S401AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS®-T2 product line, engineered specifically for high-current, high-reliability automotive switching applications demanding AEC-Q101 qualification, extended temperature operation, and robust avalanche performance.

FAQ

What is the maximum allowable gate-source voltage for IPI120N04S401AKSA1?

The absolute maximum gate-source voltage is ±20 V. Operation above +12 V or below −5 V is not recommended for long-term reliability. Gate drive circuits must limit transient overshoot using clamping diodes or RC snubbers, especially in high-dV/dt environments like motor phase legs.

Does IPI120N04S401AKSA1 require a gate resistor, and what value is typical?

Yes-a gate resistor is required to control dV/dt and suppress oscillation. For 120 A switching at 100 kHz, a 3.5 Ω resistor is typical (per datasheet test condition), yielding ~35 ns effective rise/fall times. Lower values increase EMI risk; higher values raise switching losses disproportionately.

Can this MOSFET be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. Thermal coupling and gate drive impedance matching are critical. The positive R_DS(on) temperature coefficient (1.5 mΩ → ~2.2 mΩ at 175 °C) provides inherent current sharing, but gate resistance imbalance must be <5% to avoid current hogging.

Is the drain tab electrically isolated in the PG-TO262-3-1 package?

No-the metal tab is internally connected to the drain terminal. Electrical isolation from the heatsink is mandatory unless the heatsink is referenced to the drain potential. Use isolating thermal pads rated for ≥500 V_DC dielectric strength and verify creepage/clearance per ISO 26262 ASIL-B requirements.